• Structural Engineering and Mechanics
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• 제52권1호
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• pp.89-95
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• 2014

We analyze the buckling of a thin elastic plate due to intrinsic stresses in thin films attached to the surfaces of the plate. In the case of cylindrical buckling, it is shown that for a plate with clamped edges compressive intrinsic film stresses can cause flexural buckling of the plate, while tensile intrinsic film stresses cannot. For a plate with free edges, film intrinsic stresses, compressive or tensile, cannot cause buckling.

• Interaction and multiscale mechanics
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• 제1권1호
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• pp.123-142
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• 2008

Current methodologies used for the inference of thin film stresses through curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. These methodologies have recently been extended to non-uniform stress and curvature states for the thin film subject to non-uniform, isotropic misfit strains. In this paper we study the same thin film/substrate system but subject to non-uniform, anisotropic misfit strains. The film stresses and system curvatures are both obtained in terms of the non-uniform, anisotropic misfit strains. For arbitrarily non-uniform, anisotropic misfit strains, it is shown that a direct relation between film stresses and system curvatures cannot be established. However, such a relation exists for uniform or linear anisotropic misfit strains, or for the average film stresses and average system curvatures when the anisotropic misfit strains are arbitrarily non-uniform.

• 반도체디스플레이기술학회지
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• 제14권1호
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• pp.1-5
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• 2015

This paper deals with the residual stresses developed in an epoxy film deposited on Si wafer. First, chemically induced residual stresses due to the volumetric shrinkage in cross-linking resins during polymerization are treated. The curvature measurement method is employed to investigate the residual stresses. Then, thermally induced stresses are investigated along the interface between the epoxy film and Si wafer. The boundary element method is employed to investigate the whole stresses in the film. The singular stress is observed near the interface corner. Such residual stresses are large enough to initiate interface delamination to relieve the residual stresses.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.27-33
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• 2002

The residual thermal stresses at the interface corner between the elastic substrate and the viscoelastic thin film due to cooling from cure temperature down to room temperature have been studied. The polymeric thin film was assumed to be thermorheologically simple. The boundary element method was employed to investigate the nature of stresses on the whole interface. Numerical results show that very large stress gradients are present at the interface comer and such stress singularity might lead to edge cracks or delamination.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 추계학술대회논문집
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• pp.355-358
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• 2003

To estimate the residual stresses in the thin film and surface coatings, combined method based on nanoindentation and finite element (FE) analysis was developed. A simple equation for estimating the residual stress was composed of the hardness and the parameters which can be driven from the nanoindentation loading and unloading behaviors. FE analysis on the nanoindentation procedure under the various residual stress levels was performed to determine the parameters that included in the equation. The equation showed a good coincidence between the estimated residual stresses and those for the FE analysis. Thus the proposed method was considered as a useful method for estimating the residual stresses in the thin film without stress free specimen.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2003년도 가을 학술발표회 논문집
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• pp.389-394
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• 2003

In this study, the stress singularity factors generated during cooling down from high curing temperature to room temperature have been analyzed for the viscoelastic thin film. The time domain boundary element method has been employed to investigate the behavior of stresses for the whole interface. Within the context of a linear viscoelastic theory, a stress singularity exists at the point where the interface between the elastic substrate and the viscoelastic thin film intersects the free surface.

• 한국기계가공학회지
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• 제12권2호
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• pp.14-19
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• 2013

The size and distribution of residual stresses and the effect of the minimum mesh size were investigated by the a-Si thin film solar cell. Attributed to the difference in coefficient of thermal expansion of the a-Si and Ag concentrated residual stresses at the joint interface of dissimilar materials. The ${\sigma}y$ and ${\tau}xy$ didn't appear in the central part, but ${\sigma}x$ existed. However, ${\sigma}x$, ${\sigma}y$ and ${\tau}xy$ appeared in the edge part and concentrated residual stresses at the interface between a-Si and Ag. Minimum mesh size gets smaller, the concentration of ${\sigma}y$ was significantly and existence area was reduced. As a result, the failure of thin film solar cells during the cutting process can be explained by the residual stresses.

• 대한금속재료학회지
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• 제48권12호
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• pp.1064-1069
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• 2010

Thin films have been used in a large variety of technological applications such as solar cells, optical memories, photolithographic masks, protective coatings, and electronic contacts. If thin films experience frequent temperature changes, thermal stresses are generated due to the difference in the coefficient of thermal expansion between the film and substrate. Thermal stresses may lead to damage or deformation in thin film used in electronic devices and micro-machined structures. Thus, knowledge of the thermomechanical properties of thin films, such as the coefficient of thermal expansion, is an important issue in determining the stability and reliability of the thin film devices. In this study, thermal cycling of Cu and Ag thin films with various microstructures was employed to assess the coefficient of thermal expansion of the films. The result revealed that the coefficient of thermal expansion (CTE) of the Cu and Ag thin films increased with an increasing grain size. However, the effect of film thickness on the CTE did not show a remarkable difference.

• Journal of Mechanical Science and Technology
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• 제16권11호
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• pp.1477-1484
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• 2002

Various characteristics of a thin liquid film in its vapor-phase are investigated using the molecular dynamics technique. Local distributions of the temperature, density, normal and tangential pressure components, and stress are calculated for various film thicknesses and temperature levels. Distributions of local stresses change considerably with respect to film thicknesses, and interracial regions on both sides of the film start to overlap with each other as the film becomes thinner. Integration of the local stresses, i.e., the surface tension, however, does not vary much regardless of the interfacial overlap. The minimum thickness of a liquid film before rupturing is estimated with respect to the calculation domain sizes and is compared with a simple theoretical relation.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 1999년도 봄 학술발표회 논문집
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• pp.19-26
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• 1999

This paper deals with the stress singularity induced at the interface corner between the viscoelastic thin film and the rigid substrate as the film absorbs moisture from the ambient environment. The rime-domain boundary element method is employed to investigate the behavior of interface stresses. The order of the free-edge singularity is obtained numerically for a given viscoelastic model. It is shown that the free-edge stress intensity factor is relaxed with time,'while the order of the singularity increases with time for the viscoelastic model considered.