• 한국신재생에너지학회:학술대회논문집
• /
• 2007.11a
• /
• pp.233-233
• /
• 2007

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.35.1-35.1
• /
• 2010

The Cu(In,Ga)Se2(CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, many groups made hard efforts to overcome its disadvantages in terms of high absorption of short wavelength, Cd hazardous element. Among Cd-free candidate materials, the CIGS thin film solar cells with Zn compound buffer layer seem to be promising with 15.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, few groups were successful to report high-efficiency CIGS solar cells with Zn compound buffer layer, compared to be known how to fabricate these solar cells. Each group's chemical bah deposition (CBD) condition is seriously different. It may mean that it is not fully understood to grow high quality Zn compound thin film on the CIGS using CBD. In this study, we focused to clarify growth mechanism of chemically deposited Zn compound thin film on the CIGS, especially. Additionally, we tried to characterize junction properties with unfavorable issues, that is, slow growth rate, imperfect film coverage and minimize these issues. Early works reported that film deposition rate increased with reagent concentration and film covered whole rough CIGS surface. But they did not mention well how film growth of zinc compound evolves homogeneously or heterogeneously and what kinds of defects exist within film that can cause low solar performance. We observed sufficient correlation between growth quality and concentration of NH3 as complex agent. When NH3 concentration increased, thickness of zinc compound increased with dominant heterogeneous growth for high quality film. But the large amounts of NH3 in the solution made many particles of zinc hydroxide due to hydroxide ions. The zinc hydroxides bonded weakly to the CIGS surface have been removed at rinsing after CBD.

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.2
• /
• pp.93-96
• /
• 2017

The structural, electrical and optical properties of Ti thin films fabricated by dual magnetron sputtering were investigated under various film thicknesses. The fabricated Ti thin films exhibited uniform surfaces, crystallinity, various grain sizes, and with various film thicknesses. Also, the crystallinity and grain size of the Ti thin films increased with the increase of film thickness. The electrical properties of Ti thin films improved with the increase of film thickness. The results showed that the performance of TCO-less DSSC critically depended on the film thickness of the Ti working electrodes, due to the conductivity of Ti thin film. However, the maximum conversion efficiency of TCO-less DSSC was exhibited at the condition of 100 nm thickness due to the surface scattering of photons caused by the variation of grain size.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.85.1-85.1
• /
• 2010

$Cu(In,Ga)Se_2$ (CIGS) thin film solar cell is currently 19.5% higher efficiency and developing a large area technology. The structure of CIGS solar cell that make five unit layers as back contact, light absorption, buffer, front transparent conducting electrode and antireflection to make them sequentially forming. Materials and various compositions of thin film unit which also manufacture a variety method used by the physical and chemical method for CIGS solar cell. The construction and performance test of evaporator for CIGS thin film solar cell has been done. The vapor pressures were changed by using vapor flux meter. The vapor pressure were copper (Cu) $2.1{\times}10^{-7}{\sim}3.0{\times}10^{-7}$ Torr, indium (In) $8.0{\times}10^{-7}{\sim}9.0{\times}10^{-7}$ Torr, gallium (Ga) $1.4{\times}10^{-7}{\sim}2.8{\times}10^{-7}$ Torr, and selenium (Se) $2.1{\times}10^{-6}{\sim}3.2{\times}10^{-6}$ Torr, respectively. The characteristics of the CIGS thin film was investigated by using X-ray diffraction (XRD), scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) and photoluminescence (PL) spectroscopy using a He-Ne laser. In PL spectrum, temperature dependencies of PL spectra were measured at 1137 nm wavelength.

• Current Photovoltaic Research
• /
• v.12 no.2
• /
• pp.41-47
• /
• 2024

CIGS solar cells are thin film solar cells that have excellent light absorption coefficient and can be manufactured with high efficiency through the use of low materials. In Korea, they must pass KS certification for home and commercial installation. KS C 8562 is a standard for evaluating the durability of CIGS and thin film amorphous silicon solar modules and deals with contents such as light, temperature, humidity, and mechanical durability. Unlike general crystalline silicon solar modules, the CIGS solar module has a different behavior of output change through these environmental tests, so if it shows 90% or more of the rated output suggested by the manufacturer after the final test, it is judged to be a suitable product. In this paper, the output before and after individual tests was measured through the test method of KS C 8562 to observe the output change and to discover the vulnerabilities of the CIGS solar module when exposed to various environments. Through this, it was confirmed that humidity exposure was the most vulnerable and that it had output recovery characteristics for light (visible light and ultraviolet rays). This study attempted to present the output behavior characteristics and data of the CIGS module at the time when the high efficiency thin film photovoltaic module market is expected to be created in the future.

• Current Photovoltaic Research
• /
• v.2 no.3
• /
• pp.95-102
• /
• 2014

Light trapping techniques can change the propagation direction of incident light and keep the light longer in the absorption layers of solar cells to enhance the power conversion efficiency. In thin film silicon (Si) solar cells, the thickness of absorption layer is generally not enough to absorb entire available photons because of short carrier life time, and light induced degradation effect, which can be compensated by the light trapping techniques. These techniques have been adopted as textured transparent conduction oxide (TCO) layers randomly or periodically textured, intermediate reflection layers of tandem and triple junction, and glass substrates etched by various patterning methods. We reviewed the light trapping techniques for thin film Si solar cells and mainly focused on the commercially available techniques applicable to textured TCO on patterned glass substrates. We described the characterization methods representing the light trapping effects, texturing of TCO and showed the results of multi-scale textured TCO on etched glass substrates. These methods can be used tandem and triple thin film Si solar cells to enhance photo-current and power conversion efficiency of long term stability.

• The Journal of the Korea Contents Association
• /
• v.22 no.7
• /
• pp.55-62
• /
• 2022

The perovskite solar cell is an active part of research in renewable energy fields such as solar energy, wind, hydroelectric power, marine energy, bioenergy, and hydrogen energy to replace fossil fuels such as oil, coal, and natural gas, which will gradually disappear as power demand increases due to the increase in use of the Internet of Things and Virtual environments due to the 4th industrial revolution. The perovskite solar cell is a solar cell device using an organic-inorganic hybrid material having a perovskite structure, and has advantages of replacing existing silicon solar cells with high efficiency, low cost solutions, and low temperature processes. In order to optimize the light absorption layer thin film predicted by the existing empirical method, reliability must be verified through device characteristics evaluation. However, since it costs a lot to evaluate the characteristics of the light-absorbing layer thin film device, the number of tests is limited. In order to solve this problem, the development and applicability of a clear and valid model using machine learning or artificial intelligence model as an auxiliary means for optimizing the light absorption layer thin film are considered infinite. In this study, to estimate the light absorption layer thin-film optimization of perovskite solar cells, the regression models of the support vector machine's linear kernel, R.B.F kernel, polynomial kernel, and sigmoid kernel were compared to verify the accuracy difference for each kernel function.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.10
• /
• pp.2909-2912
• /
• 2010

Hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin film for solar cells is prepared by plasma-enhanced chemical vapor deposition and physical properties of the ${\mu}c$-Si:H p-layer has been investigated. With respect to stable efficiency, this film is expected to surpass the performance of conventional amorphous silicon based solar cells and very soon be a close competitor to other thin film photovoltaic materials. Silicon in various structural forms has a direct effect on the efficiency of solar cell devices with different electron mobility and photon conversion. A Raman microscope is adopted to study the degree of crystallinity of Si film by analyzing the integrated intensity peaks at 480, 510 and $520\;cm^{-1}$, which corresponds to the amorphous phase (a-Si:H), microcrystalline (${\mu}c$-Si:H) and large crystals (c-Si), respectively. The crystal volume fraction is calculated from the ratio of the crystalline and the amorphous phase. The results are compared with high-resolution transmission electron microscopy (HR-TEM) for the determination of crystallinity factor. Optical properties such as refractive index, extinction coefficient, and band gap are studied with reflectance spectra.

• Journal of the Korean Vacuum Society
• /
• v.19 no.4
• /
• pp.275-280
• /
• 2010

The influence of $O_2$-plasma treatment on $H_2$ post-treated BZO (ZnO:B) thin film using MOCVD (Metal-Organic Chemical Vapor Deposition) are investigated. An $O_2$-plasma treatment of the $H_2$ post-treated BZO thin films resulted in XRD peak of (100), (101) and (110). Also, electrical properties resulted in an increase in sheet resistance and work function. The weighted optical transmittance and haze at 300~1,100 nm of BZO thin films with $O_2$-plasma treatment on the $H_2$ post-treatment show approximately 86% and 15%, respectively.

• Korean Journal of Materials Research
• /
• v.30 no.3
• /
• pp.131-135
• /
• 2020

Silver nanowire (AgNW) networks have been adopted as a front electrode in Cu(In,Ga)Se2 (CIGS) thin film solar cells due to their low cost and compatibility with the solution process. When an AgNW network is applied to a CIGS thin film solar cell, reflection loss can increase because the CdS layer, with a relatively high refractive index (n ~ 2.5 at 550 nm), is exposed to air. To resolve the issue, we apply solution-processed ZnO nanorods to the AgNW network as an anti-reflective coating. To obtain high performance of the optical and electrical properties of the ZnO nanorod and AgNW network composite, we optimize the process parameters - the spin coating of AgNWs and the concentration of zinc nitrate and hexamethylene tetramine (HMT - to fabricate ZnO nanorods. We verify that 10 mM of zinc nitrate and HMT show the lowest reflectance and 10% cell efficiency increase when applied to CIGS thin film solar cells.