• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.11 no.3
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• pp.80-87
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• 1997

As a result of experimenting the temperature characteristics of origination voltage in Al/$AL_1,O_3/PI (nL)/Au, the sample of polyimide LB film and AI/$AL_1,O_3/Cls TCNQ(lOL)/Al, the difference of work function is found between upper and lower electrodes. If polyimide LB film is accumulated with Z type or becomes imide, the polarization of the film is not made. And AI/$AL_2,O_3/C-{15}TCNQ( IOL)/ AI which is the CI5 TCNQ LB film sample doesn't show the difference of work function because it has the same upper and lower electrode and the polarization is found on the film. As a result of experiment with MIM element of LB ultra thin film, Direct current more than hun¬dreds of m V is generated and it can be used for industrial power resources in the area of electricity, electronics and information communication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.199-202
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• 2003

We have investigated the generation of pretilt angle for a nematic liquid crystal (NLC) alignment with rubbing alignment method on two kinds of polyimide (PI) surfaces using thin plastic substrates. The generated NLC pretilt angles on the pre-imidized type PI are about $3.8^{\circ}$ by the rubbing alignment method with thin plastic substrates, However, the pretilt angle measured at about $2.8^{\circ}$ lower on the polyamic acid type PI than by pre-imidized type PI surface with thin polymer film. The tilt angle increases as increasing curring temperature for making polyimide layer using polyamic acid type PI. It was concluded that pretilt angle in the polyimide surface is attributable to the increasing of imide rato.

• Journal of Surface Science and Engineering
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• v.25 no.2
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• pp.90-96
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• 1992

Thed effects of sputter gas pressure and substrate surface micro-roughness on the microstructure and surface topography have been investigated in the Cu thin films sputter deposited onto polyimide substrates. The surface roughness of polyimide was controlled by oxygen rf plasma treatment. In the Cu film deposited at the pressure of 5 mtorr, the surface is smooth and the columnar structure is not visible regardless of polyimide surface more open boundaries. The polyimide surface roughness enhances these effects, These phenomena can be explained in therm of atomic shadowing effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.58-58
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• 2010

Carbon nanotubes (CNTs) have been extensively studied owing to its superior electrical properties, especially high electron mobility, which can be applied to various nano-electronic devices. However, synthesized CNTs have a mixture of metallic and semiconducting tubes so that their separation has been a tremendous obstacle to the practical application in electronic device structures. Among the different separation methods, electrical breakdown process to selectively burn out the metallic tubes has been quite successful though it needs additional process in the fabrication of device structures. Here, we report on the selective but not perfect growth of semiconducting nanotubes via use of diluted ferritin catalyst. SWCNTs were grown on ferritin catalyst, where the concentration of the ferritin solution was changed. In this way, we could fabricate the electrical breakdown free SWCNT thin film transistors on the flexible polyimide (PI) substrate. When we used the ferritin diluted by 1/2000, ~ 60 % of the SWCNT thin film transistors showed a perfect p-type behavior with an on/off current ratio higher than $10^5$ and on-current greater than $10^{-7}$ A. We will also discuss the photo-response of such formed thin film transistors over both visible and UV light.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.566-570
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• 2014

Electrode pattern effects on the capacitive humidity sensor were investigated. The fabrication of the capacitive humidity sensor was formed with three steps. The bottom electrode was formed on the silicon substrate with Pt/Ti thin layer by using shadow mask and e-beam evaporator. The photo sensitive polyimide was formed on the bottom electrode by using photolithography process as a humidity sensitive thin film. The upper electrode was formed on the polyimide thin film with Pt/Ti thin layer by using e-beam evaporator and lift-off method. Three electrode patterns, such as circle, square, and triangle pattern, were used and changed the sizes to investigate the effects. The capacitances of the sensors were decreased 622 to 584 pF with the area decreament of patterns 250,000 to $196,250{\mu}m^2$. From these results, a capacitive humidity sensor with photo sensitive polyimide is expected to be applied to a high sensitive humidity sensor.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1498-1501
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• 1996

To evaluate insulating properties of polyimide thin film on high temperature over $100\;^{\circ}C$, polyimide film were prepared by electrophoretic deposition onto metal surface from nonaqueous emulsion. The emulsion is made by adding a solution of the resin to a precipitant, which is an organic liquid compeltely miscible with the solvent of the organic resin solution, but which does not dissolve the resin. The polyimide film obtained by annealing shows good insulation properties of 5.8 MV/cm at elevated temperature and breakdown strength of the film reveals thickness dependence.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.23-30
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• 1999

The relationships between morphological structures and residual stress behaviors of polyimide thin films depending on isomeric diamines were investigated. For this study, Poly(phenylene biphenyltetracarboximide) (BPDA-PDA) and poly(oxydiphenylene biphenyltetracarboximide) (BPDA-ODA) films were prepared from their isomeric diamines: 1,3-phenylene diamine (1,3-PDA) 1,4-phenylene diamine (1.4-PDA), 3,4'-oxydiphenylene diamine (3,4'-ODA), and 4,4'-oxydiphenylene diamine (4,4'-ODA), respectively. For those films, residual stresses were detected in-situ during thermal imidization of the isomeric polyimide as a function of processing temperature over the range of 25~$400^{\circ}C$ using. Thin Film Stress Analyzer (TFSA). In comparison, residual stress of BPDA-1.4PDA having better in-plain orientation and chain order was the lowest value of 7MPa whereas those of BPDA-1,3-PDA, BPDA-3,4'-ODA, and BPDA-4,4'-ODA were in the range of 40-50MPa. Conclusively, the effect of morphological nature (chain rigidity, chain order, orientation) and chain mobility relating to the g1ass transition behavior on the residual stress of isomeric polyimide thin films wart analyzed.

• ETRI Journal
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• v.25 no.4
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• pp.270-273
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• 2003

This paper presents a simple process to integrate thin-film inductors with a bottom NiFe magnetic core. NiFe thin films with a thickness of 2 to 3${\mu}m$ were deposited by sputtering. A polyimide buffer layer and shadow mask were used to relax the stress of the NiFe films. The fabricated double spiral thin-film inductor showed an inductance of 0.49${\mu}H$ and a Q factor of 4.8 at 8 MHz. The DC-DC converter with the monolithically integrated thin-film inductor showed comparable performances to those with sandwiched magnetic layers. We simplified the integration process by eliminating the planarization process for the top magnetic core. The efficiency of the DC-DC converter with the monolithic thin-film inductor was 72% when the input voltage and output voltage were 3.5 V and 6 V, respectively, at an operating frequency of 8 MHz.

• Proceedings of the Korean Society of Potoscience Conference
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• 2006.06a
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• pp.38-38
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• 2006