• Current Photovoltaic Research
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• 제2권1호
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.66-69
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• 2001

Effect of $N_2$ flow rate on properties of GaN thin films grown by plasma-enhanced molecular beam epitaxy(PEMBE) was discussed to optimize the quality of thin films. It was found that at low $N_2$ flow rate indicating high III/V flux ratio, the growth rate of GaN thin films was controlled by $N_2$ flux, and at high $N_2$ flow rate the growth rate was not controlled by $N_2$ flux any longer. It was also found that III/V flux ratio affected film quality. The film grown at higher $N_2$ flow rate showed low background carrier concentration, higher carrier mobility, and narrow FWHM in band-edge emission of low temperature PL. It is thought that the film in more Ga flux region was grown by 2-dimensional layer-by-layer growth mode, and the film in more nitrogen region was grown by 3-D island growth mode. All samples exhibited a good crystallinity.

• 한국자기학회지
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• 제16권1호
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• pp.98-101
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• 2006

결정립으로 이루어 진 나노구조 Pb 박막의 전기적 특성을 정상 면저항 측정을 통하여 연구하였다. 나노구조 박막은 저온 상의기판 위에 10nm이하의 두께로 증착되었으며, 1.3K부터 상온까지 박막의 온도를 변화시키면서 정상 면저항의 변화를 측정하였다. 열처리 온도에 따라 정상 면저항은 비 단조적하며 비가역적인 변화를 보였으며, 이러한 변화들은 열처리에 따른 나노구조 박막을 구성하고 있는 Pb 결정립의 크기변화로써 이해할 수 있다.

• 센서학회지
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• 제16권2호
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• pp.85-90
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• 2007

This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films for M/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers was carried out by APCVD using HMDS (hexamethyildisilane: $Si_{2}(CH_{3})_{6})$ precursor. Each samples were analyzed by XRD (X-ray diffraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electron diffraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin film were evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMS applications in conjunction with Si fabrication technology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.266-272
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• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.439-444
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• 2012

For the application of photo-detector as active layer, we have studied how to deposit SiGe thin film using an independent Si target and Ge target, respectively. Both targets were synthesized by purity of 99.999%. Plasma generators were generated by radio frequency (rf, 13.56 MHz) and direct current (dc) power. When Ge and Si targets were sputtered by dc and rf power, respectively, we could observe the growth of highly crystalline Ge thin film at the temperature of $400^{\circ}C$ from the result of raman spectroscopy and X-ray diffraction method. However, SiGe thin film did not deposit above method. Inversely, we changed target position like that Ge and Si targets were sputtered by rf and dc power, respectively. Although Ge crystalline growth without Si target sputtering deteriorated considerably, the growth of SiGe thin film was observed with increase of Si dc power. SiGe thin film was evaluated as microcrystalline phase which included (111) and (220) plane by X-ray diffraction method.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.998-1000
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• 2003

We have investigated thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). Source temperature, inert gas flow rate, substrate temperature and deposition pressure during film deposition is used to vary the growth rate, thin film morphology and the crystalline grain size of pentacene thin films. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays will be discussed.

• 한국진공학회지
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• 제7권s1호
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• pp.183-189
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• 1998

A new computer simulation method for film growth, the kinetic Monte Carlo simulation in combination with the results obtained from molecular dynamics simulation for the transient process induced by deposited atoms, was developed. The behavior of energetic atom in Au/Au(100) thin film deposition was investigated by the method. The atomistic mechanism of energetic atom deposition that led to the smoothness enhancement and the relationship between the role of transient process and film growth mechanism were discussed. We found that energetic atoms cannot affect the film growth mode in layer-by-layer at high temperature. However, at temperature of film growth in 3-dimensional mode and in quasi-two-dimensional mode, energetic atoms can enhance the smoothness of film surface. The enhancement of smoothness is caused by the transient mobility of energetic atoms and the suppression for the formation of 3-dimensional islands.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 제21회 학술발표회 초록집
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• pp.66-66
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• 2001

• 한국결정성장학회지
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• 제6권2호
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• pp.286-292
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• 1996

1991년부터 1995년까지 한국 결정성장학회지에 발표된 연구 내용을 토대로 국내의 박막 결정성장 연구현항을 종합적으로 정리하였다.