• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.109-112
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• 1994

In this Paper, we had investigated the optimal discharge condition (parameters of this experiment) in Facing Targets Sputtering System and AIN thin film. The parameters of this study are diameter of wing and electrode distance between two facing targets. If the parameters are varied, the discharge characteristics will be varied. So, we proved the optimal parameters of this experiment. Under this optimal parameter, thin film formed, and then growth rate investigated.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.80-84
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국세라믹학회지
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• 제30권5호
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• pp.389-396
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• 1993

We studied the crystallization behavior of amorphous PbTiO3 thin film grown at 30$0^{\circ}C$ by RF magnetron sputtering on Pt substrate. Crystallization to full perovskite phase was observed after annealing at 475$^{\circ}C$, for 9min, without PbO volatilization. The higher the annealing temperature, the shorter the time required for crystallization. The isothermal kinetic study at 475$^{\circ}C$ showed that the Avrami constant was approximately 4, which implies that the crystallization can be characterized by isotropic 3-dimensional growth with a constant nucleation rate. The TEM study revealed that the crystallized thin film was composed of very fine (20~100nm) grains oriented randomly without any evidence of 90$^{\circ}$domain boundaries.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.104-108
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• 2015

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

• 반도체디스플레이기술학회지
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• 제15권4호
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• pp.33-35
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• 2016

In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.644-647
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• 2007

We have fabricated vertical type organic thin film transistor using tris-8-hydroxyquinoline aluminum $(Alq_3)$. The effects of the growth control of $Alq_3$ thin layer on the grain structure and the flatness of film surface have been investigated. In addition, we have fabricated light emitting transistor and then investigated electroluminescent properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.164-164
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• 2007

Photodiffusion of silver into chalcogenide thin film is one of the most interesting effects that occurs in chalcogenide glass as it theatrically changes the properties of the initial material and forms a ternary. Programmable Metallization Cell(PMC) Randon Access Memory use for photodiffusion of mobile metal is based on the electrochemical growth and removal of nanoscale metallic pathway in thin film of solid electrolyte. This paper investigates the annling properties on Ag-doped $Ge_{25}Se_{75}$ thin film structure and describes the electrical characteristics of PMC-RAM. The composition of the intercalation products containing Ag is confirmed using X-ray diffraction which shows the formation of Ag-doped $Ge_{25}Se_{75}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.213-216
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• 1999

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국결정성장학회지
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• 제19권6호
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• pp.277-281
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• 2009

초발수 $SiO_2$ 박막을 sol-gel법에 의해 유리 기판 위에 성공적으로 제조하였다. 높은 표면 조도를 갖는 $SiO_2$ 박막을 제조하기 위하여 tetraethoxysilane(TEOS) 용액에 $SiO_2$ 나노 입자들을 첨가하였다. $iO_2$ 입자를 첨가하지 않은 용액을 이용하여 제조한 코팅막은 RMS roughness가 1.27 nm의 매우 평평한 표면 구조를 나타낸 반면, $SiO_2$ 나노 입자들을 1.0, 2.0, 3.0 wt% 첨가한 용액을 이용하여 제조한 $SiO_2$ 박막의 RMS roughness는 44.10 nm, 69.58 nm, 80.66 nm로 측정되었다. 제조된 $SiO_2$ 박막의 표면을 소수성 표면으로 바꾸기 위하여 FAS 용액을 이용하여 발수 처리를 하였다. FAS 처리 이후 거친 표면구조를 갖는 $SiO_2$ 박막의 표면은 친수성에서 소수성으로 바뀌었고 특히, 80.66 nm의 RMS roughness를 갖는 박막은 $163^{\circ}$의 물 접촉각을 갖는 초발수 표면을 나타내었다.