• 태양에너지
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• 제18권4호
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• pp.49-57
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• 1998

In this study, thin film evaporation of water on a horizontal plain tube is experimentally investigated. At a high heat flux, boiling of water is noticed inside the film. Once boiling occurs, evaporation heat transfer coefficient increases as the heat flux increases. In the non-boiling region, however, the heat transfer coefficient remains uniform irrespective of the heat flux. In this region, the heat transfer coefficient increases as the film flow rate increases. Comparison with existing correlations is also provided.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제24회 학술발표회 초록집
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• pp.198-198
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• 2003

• 한국세라믹학회지
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• 제46권4호
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• pp.429-435
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• 2009

In this study, we investigated microstructure and the CO gas sensing properties of Ag-CuO-$SnO_2$ thin films prepared by co-evaporation and subsequently thermal oxidation at air atmosphere. The sensitivity of a Cu-Sn films, thermally oxidized at $600^{\circ}C$, is strongly affected by the amount of Cu. At Cu:7 wt%-Sn:93 wt%, the film exhibited a maximum sensitivity of ${\sim}2.3$ to CO gas of 1000 ppm at $300^{\circ}C$. In contrast, the sensitivity of a Sn-Ag film did not change significantly with the amount of Ag. An enhanced sensitivity of ${\sim}3.7$ was observed in the film with a composition of Ag:3 wt%-Cu:4 wt%-Sn:93 wt%, when thermally oxidized at $600^{\circ}C$. In addition, this thin film shows a response time of ${\sim}80$ sec and a recovery time of ${\sim}450$ sec to 1000 ppm CO gas. The results demonstrate that the CO sensitivity of the Ag-CuO-$SnO_2$ thin films may be closely associated with coexistence of $SnO_2$ and SnO phase, decrease in average particle size, and a porous microstructure. We also suggest that co-evaporation and followed by thermal oxidation is a very simple and effective method to prepare oxide gas sensor thin films.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.239-243
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• 2008

In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of $500^{\circ}C$, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The morphology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED's and optical switches.

• 한국정보통신학회논문지
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• 제16권10호
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• pp.2247-2252
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• 2012

본 논문은 동시진공증발법(co-evaporation method)으로 CIGS 박막(thin film)을 제작을 하였다. 제작과정 중 기판온도(substrate temperature)변화와 Ga/(In+Ga) 조성비(composition ratio) 변화에 따른 저항율(resistivity) 및 흡수스펙트럼(absorbance spectra)을 측정하였다. 기판온도가 상승하면 저항율이 감소하였으며, Ga/(In+Ga) 조성비가 0.30에서 0.72까지 증가됨에 따라 밴드갭(band gap)이 1.26eV, 1.30eV, 1.43eV,1.47eV로 증가됨을 알 수 가 있었다. 동일한 조건에서 조성비를 증가하므로써 두께가 증가되었으며 저항율은 감소하였다. 본 실험을 통하여 CIGS 박막을 제작하면 광흡수률(optical absorbance ratio) 및 광전류(optical current)가 증가 될 것으로 예측할 수가 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.279-280
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• 2008

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to 150$[^{\circ}C]$ at intervals of 50$[^{\circ}C]$. As a result, at 400$[^{\circ}C]$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.

• 한국표면공학회지
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• 제32권3호
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• pp.406-409
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• 1999

Thin films of silver with high reflectance of 95% and above were fabricated successfully on polyester substrate by using e-beam evaporation processes. The optimum process condition was investigated by varying the current values applied while keeping the substrate temperature at room temperature by circulating the cooling water around it during deposition. Thin films of silver deposited with 30 mA as current revealed the highest reflectance of 96.4%, while being illuminated with a light of 700nm wave-length. But their adhesion showed unsatisfactory results. Though the films showed a condensation type in the cross-sectional views, they revealed crystallinity in the planes of (111) and (200) and growth orientation in <100> direction.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
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• pp.127-142
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• 2000

The charged cluster model states that chemical vapor deposition (CVD) begins with gas phase nucleation of charged clusters followed by cluster deposition on a substrate surface to form a thin film. A two-chambered CVD system, separated by a 1-mm orifice, was used to study gold deposition by thermal evaporation in order to determine if the CCM applies in this case. At a filament temperature of 1523 and 1773 K, the presence of nano-meter sized gold clusters was found to be positive and the cluster size and size distribution increased with increasing temperature. Small clusters were found to be amorphous and they combined with clusters already deposited on a substrate surface to form larger amorphous clusters on the surface. This work revealed that gold thin films deposited on a mica surface are the result of the sticking of 4-10 nm clusters. The topography of these films was similar to those reported previously under similar conditions.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.19-22
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• 2020

The thermal evaporation source is used to prepare thin films by physical vapor deposition. Materials of metals, organic materials, were tested and explained for thermal evaporation experiments. The developed effusion cell performance depends on the type of deposition material, the size of the crucible, the performance of the reflector, etc. and the proper conditions were found by producing, comparing and analyzing several sets of effusion cell to quantitatively evaluate the performance of the cell. The effusion cell for thermal evaporation source is used to prepare thin films of Ag, Cu, Mg.

• 마이크로전자및패키징학회지
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• 제17권4호
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• pp.77-82
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• 2010

증착공정 및 환원분위기 열처리가 p형 Sb-Te 박막의 열전특성에 미치는 영향을 연구하였다. $Sb_2Te_3$ 잉곳을 분쇄한 분말을 증착원으로 사용하여 형성한 박막은 $2.71{\times}10^{-4}W/m-K^2$, Sb와 Te 혼합분말을 증착원으로 사용하여 형성한 박막은 $0.12{\times}10^{-4}W/m-K^2$, Sb와 Te의 동시 증착으로 제조한 박막은 $0.73{\times}10^{-4}W/m-K^2$의 출력인자를 나타내었다. $300^{\circ}C$에서 2시간 유지하는 환원분위기 열처리에 의해 $Sb_2Te_3$ 잉곳을 분쇄한 분말을 증착원으로 사용하여 형성한 박막의 출력인자가 $24.1{\times}10^{-4}W/m-K^2$로 향상되었으며, Sb와 Te의 동시증착으로 제조한 박막의 출력인자는 $40.2{\times}10^{-4}W/m-K^2$로 크게 향상되었다.