• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.6
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• pp.16-19
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• 1976

InSb-Sn thin film Hall device Was drepared by flash evaporation of InSb-Sn powder on the Slide qlass. The Characteristics Curve of this device showcd good linearity and reproducibility.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.5
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• pp.2267-2271
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• 2011

This study was focused on getting p-type copper-oxide thin-film semiconductors suitable for p-channel thin-film transistors. Vacuum thermal evaporation and thermal annealing were used to get copper-oxide thin-film semiconductor having properties adoptable as an active layer of thin-film transistors. n-type thin films having electron carrier density of about $10^{22}\;cm^{-3}$ before thermal annealing was converted to p-type thin films having hole carrier density of about $10^{16}\;cm^{-3}$ as the thermal annealing conditions were optimized.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1600-1602
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• 2007

TPS (Temperature Programmed Sublimation) technology is known to research for the plane evaporation of the organic film.[5] Using TPS technology, the plane source evaporation of NPB organic film has been studied for the first time. The NPB organic film consists of nano scale film phase and bulk phase on a substrate. The 400 ${\AA}$ in film phase thickness of NPB sublimates at the $175^{\circ}$ of the Ta made metal plate. It was proved that the sublimation temperature of the organic film has much lower than that of the organic powder. ($130^{\circ}$ is lower for Alq3 and $90^{\circ}$ is lower for NPB.)

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.169-171
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• 2009

We have fabricated CIGS thin film absorber layers by the evaporation of CIGS powders which were synthesized by solutions with different atomic ratio compositions. We found that the polycrystalline structural properties and optical properties of the deposited CIGS thin films were strongly dependent on the CIGS powder synthesis solution compositions. For three different solution compositions, Cu:In:Ga:Se= 4:3:1:8, 8:3:1:8, 12:3:1,8, the deposited thin film crystalline structures were varied form InSe crystalline structure to CIGS chalcopyrite structures. Our results showed that CIGS powder evaporation is potential for the one step fabrication process for CIGS thin film absorber layer deposition.

• Journal of the Korean Ceramic Society
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• v.22 no.6
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• pp.87-93
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• 1985

The hematite the magetite and the maghemite thin film were prepared by oxidation and reductino of the vaccum-evaporated iron thin film. Interre;atoms between film preparation process and the electrical properties were investigated. At room temperature the electrical conductivity of the iron the hematite the magnetite and the maghemite thin film were $1{\times}10^4\Omega^{-1}cm^{-1}$, 2{\times}10^{-5}\Omega^{-1}cm^{-1}$, $3{\times}10^{-5}\Omega^{-1}cm^{-1}$, and $4{\times}10^{-5}\Omega^{-1}cm^{-1}$, resp-ectively. The surface of each thin film was dense and homogeneous. At the temperature that the iron thin film was converted into the hematite thin film the electrical conductivity decreased rapidly and the electrical con-ductivity of the hematite thin film increased as temperature increased. The hematite thin film was reduced to the magnetite thin film in H2 atmosphere. The electrical conductivity decreased rapidly at the temperature that the maghemite thin film is formed by oxidation of the magnetite thin film and the electrical conductivity of the maghemite thin film increased as temperature increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.39-42
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• 2004

The $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin film fabricated by using the sputtering method was compared with the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin film fabricated by using the evaporation method. In doing the ultra-low deposition because each element can exist on the substrate surface, both the sputtering method and the evaporation method could easily fabricate single phase of the Bi2212 phase. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 1995.05a
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• pp.41-44
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• 1995

The electrochromic WO$_3$ thin films were prepared by using an electron - beam evaporation technique. The influence of the electron - beam evaporation conditions. especially the vacuum pressure, and resistance of ITO substrate on the structural and electrochromic properties of the investigated film was presented. This films showed electrochromic behavior in an aqueous electrolyte of 1 M H$_2$SO$_4$. Among these WO$_3$ thin films, films prepared at a vacuum pressure of 10$^{-4}$ mbar were found to be most stable in terms of cycling durability. The chemical stability of film against dissolution in the aqueous solution was also shown to depend on the quantity of water in the film.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.83-84
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• 2009

Thin film solar cells based on CIGS continue to be a leading candidate for thin film photovoltaic devices due to their appropriate bandgap, long-term stability, and low-cost production. To date, the most successful technique for the deposition of a CIGS absorber layer has been based on the co-evaporation However, the evaporation process is difficult to scale-up for large-area manufacturing the sputtering and Selenizaton process has been a promising method for low-cost and large-scale production of high quality CIGS In this study, we have used Cu and CuIn alloy targets for precursor deposition the precursor deposited by sputtering Cu and CuIn targets and $CuInSe_2$ thin film is manufactured by Selenization process

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.311-312
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• 2005

By using 45$^{\circ}$ obliqued evaporation method with electron beam system, uniformly vertical liquid crystal (LC) alignment was achieved. And a high pretilt angles of about 2.5$^{\circ}$ were measured. Also, it was verified that there are no variations of pretilt angle as a function of $SiO_x$ thin film thickness 20nm and 50nm. A good LC alignment states were observed at annealing temperature of 250$^{\circ}C$. The high pretilt angle and the good thermal stability of LC alignment by 45$^{\circ}$ obliqued electron beam evaporation method on the $SiO_x$ thin film can be achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.383-386
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• 2002

Polycrystalline Cu(In,Ga)Se$_2$(CIGS) thin-films were grown by co-evaporation on a soda lime glass substrate. In this paper the effects of the Se evaporation temperature on the properties of CuIn0.75Ga0.25Se2 (CIGS) thin films. Structure, surface morphology and optical properties of CIGS thin films deposited at various Se evaporation temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher Se evaporation temperatures the films displayed a lower degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously. These results were supported by experimental work using scanning electron microscopy When the Se evaporation temperature was increased, the average grain size also decreased together with a reduction Cu content. The Se evaporation temperature also had a significant inf1uence on the transmission spectra. Increasing the Se evaporation temperature, the cell efficiency was improved dramatically to 11.75% with Voc = 556 mV, Jsc = 32.17 mA/cm2 and FF = 0.66. The Se evaporation temperature is an important parameter in thin film deposition regardless of the deposition technique being used to deposit thin films