$CuInSe_2$ thin film is manufactured by the Sputtering and Selenization process

스퍼터링 및 셀렌화 열처리에 의한 $CuInSe_2$ 박막제조

  • 문동권 (한국에너지기술연구원 태양전지연구단, 충남대학교) ;
  • 안세진 (한국에너지기술연구원 태양전지연구단) ;
  • 윤재호 (한국에너지기술연구원 태양전지연구단) ;
  • 곽지혜 (한국에너지기술연구원 태양전지연구단) ;
  • 이희덕 (충남대학교 반도체 및 회로) ;
  • 윤경훈 (한국에너지기술연구원 태양전지연구단)
  • Published : 2009.06.25

Abstract

Thin film solar cells based on CIGS continue to be a leading candidate for thin film photovoltaic devices due to their appropriate bandgap, long-term stability, and low-cost production. To date, the most successful technique for the deposition of a CIGS absorber layer has been based on the co-evaporation However, the evaporation process is difficult to scale-up for large-area manufacturing the sputtering and Selenizaton process has been a promising method for low-cost and large-scale production of high quality CIGS In this study, we have used Cu and CuIn alloy targets for precursor deposition the precursor deposited by sputtering Cu and CuIn targets and $CuInSe_2$ thin film is manufactured by Selenization process

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