• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.8-11
• /
• 2007

The new technologies in mobile display developed in SEC are briefly reviewed. For a differentiation, SEC's LTPS line is based on SLS (Sequential Lateral Solidification) technology. In this paper, the characteristics of SEC's SLS in recent and future mobile displays were discussed. The microstructure produced by SLS crystallization is dependent on SLS process conditions such as mask design, laser energy density, and pulse duration time. The microstructure and TFT (Thin Film Transistor) performance are closely related. For an optimization of TFT performance, SLS process condition should be adjusted. Other fabrication processes except crystallization such as blocking layer, gate insulator deposition and cleaning also affect TFT performance. Optimized process condition and tailoring mask design can make it possible to produce high quality AMOLED devices. The TFT non-uniformity caused by laser energy density fluctuation could be successfully diminished by mixing technology.

• Journal of Sensor Science and Technology
• /
• v.32 no.4
• /
• pp.252-256
• /
• 2023

A one-step method for nanoscale patterning of silver ionic ink on a substrate is developed using a microscale, elastic mold deformation. This method yields unique micro/nanoscale metallic structures that differ from those produced using the original molds. The linewidth of these metallic structures is significantly reduced (approximately 10 times) through the sidewall deformation of the original mold cavity on a thin liquid film, as verified by finite element analysis. The process facilitates the fabrication of various, isolated and complex micro/nanoscale metallic structures with negligible residual layers at low cost and high throughput. These structures can be utilized for various applications, including optoelectronics, wearable sensors, and metaverse-related devices. Our approach offers a promising tool for manipulation and fabrication of micro/nanoscale structures of various functional materials.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.341-341
• /
• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

• International journal of advanced smart convergence
• /
• v.5 no.2
• /
• pp.1-7
• /
• 2016

Recently, with the development of advanced thin film devices comes the need for constant high quality vacuum as the deposition pressure is more demanding. It is for this reason our research seeks to understand how the variable design factors are employed in such vacuum systems. In this study, the effects of design factor applications on the vacuum characteristics were simulated to obtain the optimum design modeling of variable models on an ultra high vacuum system. The commercial vacuum system simulator, $VacSim^{(multi)}$, was used in our investigation. The reliability of the employed simulator was verified by the simulation of the commercially available models of ultra high vacuum system. Simulated vacuum characteristics of the proposed modeling aligned with the observed experimental behavior of real systems. Simulated behaviors showed the optimum design models for the ideal conditions to achieve optimal pressure, pumping speed, and compression ratio in these systems.

• Composites Research
• /
• v.35 no.6
• /
• pp.371-377
• /
• 2022

Triboelectric nanogenerator (TENG) devices have generated a lot of interest in recent decades. TENG technology, which is one of the technologies for harvesting mechanical energy among the energy wasted in the environment, is obtained by the dual effect of electrostatic induction and triboelectric charging. Recently, a multilayer thin film stacking method (or layer-by-layer (LbL) self-assembly technique) is being considered as a method to improve the performance of TENG and apply it to new fields. This LbL assembly technology can not only improve the performance of TENG and successfully overcome the thickness problem in applications, but also present an inexpensive, environmentally friendly process and be used for large-scale and mass production. In this review, recent studies in the accomplishment of LbL-based materials for TENG devices are reviewed, and the potential for energy harvesting devices reviewed so far is checked. The advantages of the TENG device fabricated by applying the LbL technology are discussed, and finally, the direction and perspective of this fabrication technology for the implementation of various ultra-thin TENGs are briefly presented.

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.2059-2059
• /
• 2011

This study focused on the performance characteristics of dye-sensitized solar cell electrodes used in the IZO films were investigated. The experiment measured an sheet resistance and transmittance. Measured results showed 90% transmittance, sheet resistance also 18.3 ${\Omega}$/cm]. The results were indicated applications of dye-sensitized solar cell and optoelectronic devices, transparent electrodes.

• Proceedings of the Polymer Society of Korea Conference
• /
• 2006.10a
• /
• pp.169-169
• /
• 2006

Novel liquid crystalline malonic ester monomers were synthesized from malonyl dichloride and mesogenic alcohols as a photoresponsive group. The monomers were polymerized with aliphatic or aromatic dibromides in the presence of sodium hydride to give 8 kinds of novel poly(malonic esters) with two symmetrical azobenzene groups. We found that the resulting polymer films could be used as rewritable optical data storage (or holographic image) media through a photoisomerization of azobenzene group by Ar laser irradiation. The sensitivity of data recording was dependent not only on the thickness of the polymeric thin film but also on the intensity of laser beam.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.390.2-390.2
• /
• 2016

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.90-93
• /
• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STI CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. To resolve these problems, the development of slurry for CMP with high removal rate and high selectivity between each thin films was studied then it can be prevent the reasons of many defects by reasons of many defects by simplification of process that directly apply CMP process to STI structure without the reverse moat pattern process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.236-236
• /
• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.