• Title/Summary/Keyword: Thin film coating

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Al-Si-N Thin Film Coating for Polycarbonate

  • Kim, Seong-Min;Mun, Seon-U;Kim, Gyeong-Hun;Jang, Jin-Hyeok;Lee, Seung-Min;Kim, Jeong-Su;Im, Sang-Ho;Han, Seung-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.179-179
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    • 2013
  • 현재 자동차 분야에서 차량 경량화를 통해 연비 향상 및 에너지 효율 향상을 기대하고 있으며, 차량 경량화의 한 수단으로 자동차용 유리를 고강도 투명 플라스틱 소재인 PC (Polycarbonate)로 대체하고자 하는 연구가 활발히 이루어지고 있다. 그러나, PC의 낮은 내마모 특성과 자외선에 의한 열화 및 변색 현상은 해결하여야 할 중요한 문제점으로 지적되고 있다. 본 연구에서는, PC의 내마모 특성을 향상시키기 위하여 transmittance가 확보되고, 고경도 특성을 갖는 Al-Si-N 박막 증착에 대한 연구를 하였다. Al-Si-N 박막 증착을 위하여 ICP-assisted reactive magnetron sputtering 장비를 이용하였으며, 고경도 특성을 갖는 Al-Si-N 박막을 제조하였다. 분석 장비로는 박막의 chemical state와 crystallinity를 확인하기 위하여 XPS (X-ray Photoelectron Spectroscopy), AES (Auger electron spectrscopy)와 XRD (X-ray diffraction)를 이용하여 분석을 수행하였으며, Knoop ${\mu}$-hardness tester와 Pin-on-disk를 이용하여 경도 및 내마모 특성을 평가하였다. Al-Si-N 박막의 두께는 ~5,000 ${\AA}$을 증착하였으며, 가시광 영역에서 평균 92%의 transmittance를 나타내었다. 박막의 Si/(Al+Si) 비율에 따라 다른 경도 특성을 나타냈는데, Si/(Al+Si) 비율이 26~32% 부근에서 최대 31 GPa의 경도 값을 확인 할 수 있었다.

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Measurement of Ion Energy Distribution using QMS & Ionization Enhancement by usign Magnetic Field in Triod BARE (자장을 이용한 이온화율 증대형 삼극형 BARE에서 이온화율의 증대경향과 QMS를 이용한 이온의 에너지 분포 측정)

  • 김익현;주정훈;한봉희
    • Journal of the Korean institute of surface engineering
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    • v.24 no.3
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    • pp.119-124
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    • 1991
  • Recently, the trend of research in hard coating is concentrate on developing the process of ionization rate under low operating pressure, to get the thin film with high adhesion and dense microstructures. In this study ionization rate enhancement type PVD process using permanent magnet is developed, which enhances the ionization rate by confining the plasma suppressing the wall loss of electron. By the result to investigate the characteristic of glow discharge, the ionization rate of this process is enhanced about twice as high as that of triod BARE process (about 26%), and more dense TiN microstructures are obtained in this process. Cylindrical ion energy analyzer is made and attached in front of a quadrupole mass filter for the analysis of the energy distribution of reactive gas and activated gas ions from the plasma zone. To analyze the operation mechanism of ion energy analyzer, computer simulation is performed by calculation the electric field environment using finite element method. By these analyses of ion energy distribution of outcoming ions from the plasma zone, it is found that magnetic field enhances ion kinetic energy as well as ionization rate. The other results of this study is that the foundation of feed-back system is constructed, which automatically control the partial pressure of reactive gas. In can be possible by recording the data of mass spectrum and ion energy analysis using A-D converter.

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$Ba[Ce_{0.9}Y_{0.1}]O_{3-\delta}$ - Ni Composite Membrane for Hydrogen Separation by Aerosol Deposition Method (에어로졸 증착법[aerosol depostion method]에 의한 $Ba[Ce_{0.9}Y_{0.1}]O_{3-\delta}$ - Ni 수소분리막 제조)

  • Park, Young-Soo;Byeon, Myeong-Seob;Choi, Jin-Sub;Kim, Jin-Ho;Hwang, Kwang-Taek
    • Transactions of the Korean hydrogen and new energy society
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    • v.21 no.2
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    • pp.117-122
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    • 2010
  • BCY($Ba(Ce_{0.9}Y_{0.1})O_{3-\delta}$) oxide, shows high protonic conductivity at high temperatures, and are referred to as hydrogen separation membrane. For high efficiency of hydrogen separation ($H_2$ flux and selectivity) and low fabrication cost, ultimate thin and dense BCY-Ni layer have to be coated on a porous substrate such as $ZrO_2$. Aerosol depostion (AD) process is a novel technique to grow ceramic film with high density and nano-crystal structure at room-temperature, and would be applied to the fabrication process of AD integration ceramic layer effectively. XRD and SEM measurements were conducted in order to analyze the characteristics of BCY-Ni membrane fabricated by AD process.

Tribological Properties of Carbon Layers Produced by High Temperature Chlorination in Comparison with DLC Coating (DLC 코팅과 비교된 고온 염소처리에 의한 탄소 막의 Tribological 특성)

  • Choi, Hyun-Ju;Bae, Heung-Taek;Na, Byung-Chul;Lee, Jeon-Kook;Lim, Dae-Soon
    • Journal of the Korean Ceramic Society
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    • v.44 no.7
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    • pp.375-380
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    • 2007
  • Tribological properties of carbon layers produced by high temperature chlorination of SiC ceramic and DLC (diamond-like carbon) coatings produced by ion plating method were investigated and compared. Carbon coatings were produced by exposure of ball and disc type SiC in chlorine and hydrogen gas mixtures at $1200^{\circ}C$. After treatment for 10 h, dense carbon films up to $180{\mu}m$ in thickness were formed. Tribological behavior of newly developed carbon films were compared with that of DLC films. Wear resistance and frictional coefficient of the surface modified ball and disc type SiC were significantly improved compared to an untreated SiC specimen, and also the modified carbon layer had better performance than DLC coatings. Therefore, in this study, the newly developed carbon films have several advantages over existing carbon coatings such as DLC coatings and showed superior tribological performances.

Fabrication of DLC Micro Pattern Roll Mold by Photolithography Process (포토 리소그래피 공정을 이용한 DLC 마이크로 패턴 원통 금형 제작)

  • Ha, T.G.;Kim, J.W.;Lee, T.D.;Yoon, S.J.;Kim, T.G.
    • Journal of the Korean Society for Heat Treatment
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    • v.31 no.2
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    • pp.63-67
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    • 2018
  • Recent mold industry uses many roll-to-roll processes that can produce high production speed and precision machining and automation process. In the circular cylinder mold, however, patterns of less than $10{\mu}m$ are difficult to manufacture and maintain. In this study, we fabricated a circular cylindrical mold with a DLC thin film which have high hardness, low coefficient of friction and high releasability by using lithography and lift-off process. The height, line width, and pitch of the fabricated DLC macro pattern are $3.1{\mu}m$, $9.1{\mu}m$ and $20.2{\mu}m$, respectively. The pattern size is finer than the current applied to the aluminum cylinder type, and this shows the possibility of practical use of DLC micro pattern roll mold.

Study for Improvement of Laser Induced Damage of 1064 nm AR Coatings in Nanosecond Pulse

  • Jiao, Hongfei;Cheng, Xinbing;Lu, Jiangtao;Bao, Ganghua;Zhang, Jinlong;Ma, Bin;Liu, Huasong;Wang, Zhanshan
    • Journal of the Optical Society of Korea
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    • v.17 no.1
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    • pp.1-4
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    • 2013
  • For the conventionally polished fused silica substrate, an around 100 nm depth redeposition polishing layer was formed on the top of surface. Polishing compounds, densely embedded in the redeposition polishing layer were the dominant factor that limited the laser induced damage threshold (LIDT) of transmission elements in nanosecond laser systems. Chemical etching, super-precise polishing and ion beam etching were employed in different ways to eliminate these absorbers from the substrate. After that, Antireflection (AR) coatings were deposited on these substrates in the same batch and then tested by 1064 nm nano-pulse laser. It was found that among these techniques only the ion beam etching method, which can effectively remove the polishing compound and did not induce extra absorbers during the disposal process, can successfully improve the LIDT of AR coatings.

Growth of SiC Oxidation Protective Coating Layers on graphite substrates Using Single Source Precursors

  • Kim, Myung-Chan;Heo, Cheol-Ho;Park, Jin-Hyo;Park, Seung-Jun;Han, Jeon-Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.122-122
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    • 1999
  • Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

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Sn-Ag-Cu Solder Joint Properties on Plasma Coated Organic Surface Finishes and OSP (플라즈마 유기막과 OSP PCB 표면처리의 Sn-Ag-Cu 솔더 접합 특성 비교)

  • Lee, Tae-Young;Kim, Kyoung-Ho;Bang, Jung-Hwan;Park, Nam-Sun;Kim, Mok-Soon;Yoo, Sehoon
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.3
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    • pp.25-29
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    • 2014
  • Plasma organic thin film for PCB surface finish is a potential replacement of the conventional PCB finishes because of environment-friendly process, high corrosion-resistance and long shelf life over 1 year. In this study, solder joint properties of the plasma organic surface finish were estimated and compared with OSP surface finish. The plasma surface finish was deposited by chemical vapor deposition from fluorine-based precursors. The thickness of the plasma organic coating was 20 nm. Sn-3.0Ag-0.5Cu (SAC305) solder was used as solder joint materials. From a salt spray test, the plasma organic coating had higher corrosion resistance than the OSP surface finish. The spreadability of SAC305 on plasma organic coating was higher than that on OSP surface finish. SEM and TEM micrographs showed that the interfacial microstructure of the plasma surface finish sample were similar to that of the OSP sample. Solder joint strength of the plasma finish sample was also similar to that of the OSP finished sample.

Analysis of C-V Characteristics of MIS Structure Based on OTFT Technology for Flexible AM-OLED (Flexible AM-OLED를 위한 OTFT 기술 기반의 MIS 구조 C-V 특성 분석)

  • Kim, Jung-Seok;Kim, Byoung-Min;Chang, Jong-Hyeon;Ju, Byeong-Kwon;Pak, Jung-Ho
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.77-78
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    • 2006
  • 최근 flexible OLED의 구동에 사용하기 위한 유기박막트랜지스터(Organic Thin Film Transistor, OTFT)의 연구에서는 용매에 용해되어 spin coating이 가능한 재료의 개발에 관심을 두고 있다. 현재 pentacene으로는 아직 spin coating으로 제작할 수 있는 상용화된 제품이 없고 spin coating이 가능한 활성층 물질(active material)로 P3HT가 쓰이고 있다. 본 연구에서는 용해 가능한 P3HT 활성층 물질과 여러 종류의 용해 가능한 게이트 절연물(gate insulator, Gl)을 사용하여 안정된 소자를 구현할 수 있는 공정을 개발하는 목적으로 metal-insulator-semironductor(MIS) 소자를 제작하여 C-V 특성을 측정하고 분석하였다. 먼저 7mm${\times}$7mm 크기의 pyrex glass 시편 위에 바닥 전극으로 $1600{\AA}$ Au을 증착하고 spin coating 방식을 이용하여 PVP, PVA, PVK, BCB, Pl의 5종류의 게이트 절연층을 각각 형성하였고 그 위에 같은 방법으로 P3HT를 코팅하였다. P3HT 코팅 시 bake 공정의 유무와 spin rpm의 변화에 따른 P3HT의 두께를 측정하였다. Gl의 종류별로 주파수에 따른 capatltancc를 측정하여 비교, 분석하였다. C-V 측정 결과 PVP, PVA, PVK, BCB, Pl의 단위 면적당 capacitance 값은 각각 1.06, 2.73, 2.94, 3.43, $2.78nF/cm^2$로 측정되었다. Threshold voltage, $V_{th}$는 각각 -0.4, -0.7, -1.6, -0.1, -0.2V를 나타냈다. 주파수에 따른 capacitance 변화율을 측정한 결과 Gl 물질 모두 주파수가 높을수록 capacitance가 점점 감소하는 경향을 보였으나 1${\sim}$2nF 이내의 범위에서 작은 변화율만 나타냈다. P3HT의 두께와 bake 온도를 변화시켜 C-V 값을 측정한 결과 차이는 없었다. FE-SEM으로 관찰한 결과에서도 두께나 온도에 따른 P3HT의 표면 morphology 차이를 확인할 수 없었다. 본 연구에서 PVK와 P3HT의 조합이 수율(yield)면에서 가장 안정적이면서 $3.43\;nF/cm^2$의 가장 높은 capacitance 값을 나타내고 $V_{th}$ 값 또한 -1.6V로 가장 낮은 값을 보였다.

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Optimization of anode and electrolyte microstructure for Solid Oxide Fuel Cells (고체산화물 연료전지 연료극 및 전해질 미세구조 최적화)

  • Noh, Jong Hyeok;Myung, Jae-ha
    • Korean Chemical Engineering Research
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    • v.57 no.4
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    • pp.525-530
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    • 2019
  • The performance and stability of solid oxide fuel cells (SOFCs) depend on the microstructure of the electrode and electrolyte. In anode, porosity and pore distribution affect the active site and fuel gas transfer. In an electrolyte, density and thickness determine the ohmic resistance. To optimizing these conditions, using costly method cannot be a suitable research plan for aiming at commercialization. To solve these drawbacks, we made high performance unit cells with low cost and highly efficient ceramic processes. We selected the NiO-YSZ cermet that is a commercial anode material and used facile methods like die pressing and dip coating process. The porosity of anode was controlled by the amount of carbon black (CB) pore former from 10 wt% to 20 wt% and final sintering temperature from $1350^{\circ}C$ to $1450^{\circ}C$. To achieve a dense thin film electrolyte, the thickness and microstructure of electrolyte were controlled by changing the YSZ loading (vol%) of the slurry from 1 vol% to 5 vol. From results, we achieved the 40% porosity that is well known as an optimum value in Ni-YSZ anode, by adding 15wt% of CB and sintering at $1350^{\circ}C$. YSZ electrolyte thickness was controllable from $2{\mu}m$ to $28{\mu}m$ and dense microstructure is formed at 3vol% of YSZ loading via dip coating process. Finally, a unit cell composed of Ni-YSZ anode with 40% porosity, YSZ electrolyte with a $22{\mu}m$ thickness and LSM-YSZ cathode had a maximum power density of $1.426Wcm^{-2}$ at $800^{\circ}C$.