• Title/Summary/Keyword: Thin Layer

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Characteristics of PZT thin films with varying the bottom-electrodes and buffer layer (PZT 박막제조시 하부전극과 buffer층에 따른 박막특성에 관한 연구)

  • 이희수;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.2
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    • pp.177-184
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    • 1996
  • We adopted the $Pt/SiO_{2}/Si$ and the $Ir/SiO_{2}/Si$ substrates of which buffer layer is $PbTiO_{3}$ to improve electrode and interfacial properties of PZT thin film deposited by reactive sputtering method using metal target in this study. We got PZT thin film to have highly oriented(100) structure and good crystallinity using buffer layer in Pt bottom-electrode, though randomly oriented PZT thin film was obtained without buffer layer. Although great improvement of PZT phase formation on Ir bottom-electrode with buffer layer was not observed, we observed the increase of remennant polarization and the decrease of coercive field compared with properties of PZT thin films on the Pt bottom-electrode. So we got the results of the increase of dielectric constant using buffer layer on fabrication of PZT thin film and the better dielectric properties in PZT thin film using Ir bottom-electrode compared with that using Pt bottom-electrode.

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Study on the eletronic absorption and surface morphology of phthalocyanine double layer thin films

  • Heo, Il-Su;Ryu, Il-Hwan;Hong, Da-Jeong;Im, Sang-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.337-337
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    • 2011
  • The elecronic absorption and surface morphology evolution of two types of molecular double layer thin films, copper phthalocyanine(CuPc) layer deposited on top of chloro[subphtalocyaninato]boron(III) (SubPc) layer, denoted as SubPc/CuPc, and vice versa, at various thicknesses were invertigated using ultraviolet(UV)-visible spectroscopy and atomic force microscopy (AFM). Both types of double layer structures showed similar broadened absorption patterns in UV-visible region which were well consistent with fitted spectra by a simple linear combination of single layer absorption spectra of two materials. In contrast, the surface morphology of double layer structures was dependent on the order of deposition. For CuPc/SubPc structures, the surface morphology was characterized by elongated grains, characteristic of SubPc thin films, indicating the morphological influence of underlying CuPc layer on subsequent SubPc layer was not large. For SubPc/CuPc structures, however, the underlying SubPc layer acted as a morphological template for the subsequently deposited CuPc layer. It was also observed that the grain size of CuPc layer varied by the thickness of underlying SubPc layer.

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Plasma-polymerized Styrene Prganic thin Film as Hybrid OLEDs Encapsulation (플라즈마 중합된 Styrene을 유기박막으로 사용한 하이브리드형 OLED 봉지기술)

  • Jung, Kun-Soo;Lee, Boong-Joo;Shin, Paik-Kyun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.10
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    • pp.1412-1416
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    • 2014
  • We report thin-film organic moisture barriers based on polystyrene(PS) laminates deposition by PECVD for an encapsulation of OLEDs. The organic polystyrene thin-film has the benzene ring structure and high hydrophobic characteristics and it was polymerized by PECVD in dry process. Life time properties of Ca test were obtained 32 minutes at the RF 100W process conditions. From the AFM test, the roughness of multi-layer thin-film was more excellent rather than that of a single-layer thin-film. In addition, 5 layers of the multi-layer film properties were obtained 45 minutes. So that the optical and electrical properties were not affected with these plasma polymerized organic thin-film encapsulation. For life time improvement, the inorganic $Al_2O_3$ thin-film were deposited 5nm using ALD atomic layer deposition. The WVTR(Water Vaper Transmission Rate) value of hybrid thin-film encapsulation in the optimum process conditions was resulted by less than $10-3g/m^2/day$. From the results of experiment, plasma polymerized hybrid encapsulation was suggested as the flexible display applications.

Effect of the hetero-epitaxial ZnO buffer layer for the formation of As-doped ZnO thin films (Hetero-epitaxial ZnO 버퍼층이 As-doped ZnO 박막의 증착조건에 미치는 영향)

  • Lee, Hong-Chan;Choi, Won-Kook;Shim, Kwang-Bo;Oh, Young-Jei
    • Journal of Sensor Science and Technology
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    • v.15 no.3
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    • pp.216-221
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    • 2006
  • ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.

Ultrasonic Measurement of Interfacial Layer Thickness of Sub-Quarter-Wavelength

  • Kim, No-Hyu;Lee, Sang-Soon
    • Journal of the Korean Society for Nondestructive Testing
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    • v.23 no.6
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    • pp.577-582
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    • 2003
  • This paper describes a new technique for thickness measurement of a very thin layer less than one-quarter of the wavelength of ultrasonic wave used in the ultrasonic pulse-echo measurements. The technique determines the thickness of a thin layer in a tapered medium from constructive interference of multiple reflection waves. The interference characteristics are derived and investigated in theoretical and experimental approaches. Modified total reflection wave g(t) defined as difference between total and first reflection waves increases in amplitude as the interfacial layer thickness decreases down to zero. A layer thickness less than one-tenth of the ultrasonic wavelength is measured using the maximum amplitude of g(t) with a good accuracy and sensitivity. The method also requires no inversion process to extract the thickness information from the waveforms of reflected waves, so that it makes possible to have the on-line thickness measurement of a thin layer such as a lubricating oil film in thrust bearings and journal bearings during manufacturing process.

Analysis of Bi-Superconducting Thin Films Fabricated by Using the Layer by Layer Deposition and Evaporation Deposition Method

  • Yang, Seung-Ho;Cheon, Min-Woo;Lee, Ho-Shik;Park, Yong-Pil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.06a
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    • pp.517-520
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    • 2007
  • The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thin film fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or $Bi_2O_3$molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. On the other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

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Characteristics of Thin Films Fabricated by Using the Layer-by-Layer Sputtering and Evaporation Method (순차 스퍼터 법과 증발 법으로 제작한 박막의 특성)

  • Cheon, Min-Woo;Park, Yong-Pil;Kim, Jeong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.571-574
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    • 2003
  • The thin films fabricated by using the layer-by-layer sputtering was compared with the thin film fabricated by using the evaporation method. Re-evaporation in the form of Bi atoms or $Bi_2O_3$ molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer-by-layer deposition. On the other hand, the respective atom numbers corresponding to BiSrCaCuO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BiSrCaCuO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

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Interface Characterization of Supeconducting Thin Film on Sapphire Grown by an Excimer Laser (액시머 레이저로 증착된 초전도박막과 사파이어 기판간 계면 특성 분석)

  • 이상렬;박형호;강광용
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.148-151
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    • 1995
  • Excimer laser has been used to fabricate superconducting YBa$_2$Cu$_3$O$\sub$7-x/(YBCO) thin films on various substrates. An XeCl excimer laser with an wavelength of 308 nm was used to deposit both buffer layer and superconducting thin film on sapphire substrate. The characterizations of the interface between thin film and substrate were performed. The interfacial properties of thin films on buffered sapphire and on bare sapphire were compared. With a 20 nm PrBa$_2$Cu$_3$O$\sub$7-x/(PBCO) buffer layer, no diffusion layer was observed between film and substrate while the diffusion layer with about 30 nm thickness was observed between film and sapphire without buffer layer.

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Characteristics analysis of ZnO-Si-ZnO multi-layer thin films by pulsed laser deposition (펄스 레이저 증착법에 의해 제작된 ZnO-Si-ZnO 다층 박막의 특성 분석)

  • Kang, Hong-Seong;Kang, Jeong-Seok;Shim, Eun-Sub;Pang, Seong-Sik;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.1057-1059
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    • 2002
  • ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at $300^{\circ}C$ in oxygen ambient pressure. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. Also, the optical and structural properties changed by Si layer in ZnO thin film. The optical and structural properties of Si-doped ZnO thin films were characterized by PL(Photoluminescence) and XRD(X-ray diffraction method) respectively. Electrical properties were measured by van der Pauw Hall measurements.

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Three-Dimensional Analysis on Drying Process of a Cylindrical Thin Film Layer of Sludge under Uniform Heating (일정온도로 가열되는 원통 형상 슬러지 박막의 건조에 대한 3차원 해석)

  • Lee, Kong-Hoon;Kim, Ook-Joong
    • Proceedings of the SAREK Conference
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    • 2009.06a
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    • pp.1326-1331
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    • 2009
  • Drying process in the cylindrical thin film layer of sludge with the thickness less than a few millimeters has been investigated. Thin film drying is specially designed and used to dry the viscous materials like sewage sludge. The thin film layer of sludge is dried on the metallic cylindrical surface through which thermal energy is supplied to the layer during drying. The wall temperature is assumed to be constant during drying in the present study for the simplification. In order to solve the equations, the mass transfer rate on the drying surface should be determined. The mass flux of evaporated water vapor on the surface is estimated with the formulation given in the literature. The effect of some physical parameters on drying has been examined to figure out the drying characteristics of the sludge layer.

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