• 한국표면공학회지
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• 제50권1호
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• pp.35-41
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• 2017

$TiO_2$, $Al_2O_3$, and $TiO_2-Al_2O_3$ nanolaminated films were grown by atomic layer deposition (ALD) on the 316L stainless steel (SS316L) substrates at a temperature of $150^{\circ}C$. The growth kinetics of $ALD-TiO_2$ and $Al_2O_3$ thin films were systematically investigated in order to precisely control the thickness of each layers in the $TiO_2-Al_2O_3$ nanolaminated films using a high-resolution transmission electron microscopy. And, the exact deposition rates of $ALD-TiO_2$ on $Al_2O_3$ surface and $ALD-Al_2O_3$ on $TiO_2$ surface were revealed to be 0.0284 nm/cycle and 0.11 nm/cycle, respectively. At given growth conditions, the microstructures of $TiO_2$, $Al_2O_3$ and $TiO_2-Al_2O_3$ nanolaminated films were amorphous. The potentiodynamic polarization test revealed that the $TiO_2-Al_2O_3$ nanolaminated film coated SS316L had a best corrosion resistance, although all ALDcoated SS316L exhibited a clear improvement of the corrosion resistance compared with a bare SS316L.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• 대한치과보철학회지
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• 제41권2호
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• pp.128-135
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• 2003

Statement of problem : Implant screw loosening remains a problem in implant prosthodontics. Some abutment screws with treated surfaces were introduced to prevent screw loosening and to increase preload. DLC(Diamond Like Carbon) film has similar properties on hardness, wear resistance, chemical stability, biocompatibility as real diamond materials. Purpose : The purpose of this study was to investigate the effect of lubricant layer on abutment screw and to discriminate more effective method between soft lubricant and hard lubricant to prevent screw loosening. Material and method : In this study, $1{\mu}m$ thickness DLC was used as protective, lubricating layer of titanium screws and 3 times removal torque was measured on the abutment screws to investigate the difference in 10 coated and 10 non-coated abutment screws. Results : The results indicated that the implants with DLC coating group were not more resistant to the applied force in screw loosening. At 32Ncm, the 3 times removal torque in DLC group were $27.75{\pm}2.89,\;25.85{\pm}2.35$ and $26.2{\pm}2.57$. The removal torque in no-coated abutment screws were $27.85{\pm}4.23,\;27.35{\pm}2.81$ and $27.9{\pm}2.31$, respectively. Conclusion : The lubricant layer used in this study was Diamond Like Carbon(DLC) and it have a properties of hard and stable layer. The DLC coating layer was hard enough to prevent distortion of screws in the repeated unscrewing procedure in clinical situation. The reduced friction coefficient in hard DLC layer was not effective to prevent screw loosening.

• 한국정보통신학회논문지
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• 제8권3호
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• pp.679-685
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• 2004

전기영동전착법은 제작장치와 공정이 간단하고 두께제어 및 다양한 형태의 초전도 막과 선재 제작이 가능한 경제적 효율성과 기술적 장점을 가지고 있다. 본 논문에서는 전착공정 개발을 통한 분말의 치밀성 및 배향성 향상을 위한 최적화 방안과, 건조 및 열처리 과정에서의 크랙 및 기공현상과 같은 문제점을 극복할 수 있는 균일한 표면의 확보에 관한 연구를 수행하였으며 전기영동전착 초전도 후 막 테이프 제조를 위한 공정의 최적화 방안에 대하여 연구하였다. YBCO 초전도 후막의 균일한 표면과 초전도특성 향상을 위한 공정개선방법으로는 수직방향 교류전계 인가 방식을 적용한 시스템을 최초로 개발하여 전기영동전착 공정에 적용하였다. 본 연구에서 제안한 수직방향 교류전계 인가 방식은 경제적 효율성을 위하여 60 Hz의 25∼120 V/cm의 상용전원을 사용하였으며, 제작된 후막은 기공과 크랙현상이 제거된 균일한 후막으로 여기서 얻어진 대표적인 특성 값들은 임계온도(Tc,zero) 90 K, 임계전류밀도 3419 A/$\textrm{cm}^2$의 값을 얻었다. 직류 전착전계만을 사용하여 제작된 후막의 임계전류밀값인 2354 A/$\textrm{cm}^2$에 비하여 45% 이상 향상된 특성을 확보하였다.

• 멤브레인
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• 제31권6호
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• pp.417-425
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• 2021

고용량 배터리에 대한 요구가 증가에 따라 기존 음극재보다 높은 용량(3,860 mAh/g)과 낮은 전기화학적 전위(-3.040 V)를 갖는 리튬 금속 기반 음극재에 대한 연구가 활발하게 이루어지고 있다. 본 연구에서는 수열 합성을 통해 제작된 아나타제(anatase) 타입의 TiO₂ 나노 입자 기반한 PVdF-HFP/TiO₂ 복합체를 리튬 금속 음극의 계면 보호층으로 적용하였다. 결정구조 및 형상 분석을 통해 유/무기-리튬 나노복합체 박막의 형성을 확인하였다. 또한, 전지화학 테스트(사이클 테스트 및 전압 프로파일)를 통해 리튬 금속 음극의 전기화학 성능 은 복합체 보호막이 TiO₂ 10 wt%, 코팅 두께 1.1 ㎛의 조건에서 가장 개선된 전기화학적 성능(콜롱 효율 유지: 77 사이클 동안 90% 이상) 발현을 확인하였다. 이를 통해, 처리하지 않은 리튬 전극 대비 본 보호층에 의한 리튬 금속 음극의 성능 안정화/개선 효과가 검증되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.144.2-144.2
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• 2016

Diamond-like carbon (DLC) coatings have been widely applied to the mechanical components, cutting tools due to properties of high hardness and wear resistance. Among them, hydrogenated amorphous carbon (a-C:H) coatings are well-known for their low friction properties, stable production of thin and thick film, they were reported to be easily worn away under high temperature. Non-hydrogenated tetrahedral amorphous carbon (ta-C) is an ideal for industrial applicability due to good thermal stability from high $sp^3$-bonding fraction ranging from 70 to 80 %. However, the large compressive stress of ta-C coating limits to apply thick ta-C coating. In this study, the thick ta-C coating was deposited onto Inconel alloy disk by the FCVA technique. The thickness of the ta-C coating was about $3.5{\mu}m$. The tribological behaviors of ta-C coated disks sliding against $Si_3N_4$ balls were examined under elevated temperature divided into 23, 100, 200 and $300^{\circ}C$. The range of temperature was setting up until peel off observed. The experimental results showed that the friction coefficient was decreased from 0.14 to 0.05 with increasing temperature up to $200^{\circ}C$. At $300^{\circ}C$, the friction coefficient was dramatically increased over 5,000 cycles and then delaminated. These phenomenon was summarized two kinds of reasons: (1) Thermal degradation and (2) graphitization of ta-C coating. At first, the reason of thermal degradation was demonstrated by wear rate calculation. The wear rate of ta-C coatings showed an increasing trend with elevated temperature. For investigation of relationship between hardness and graphitization, thick ta-C coatings(2, 3 and $5{\mu}m$) were additionally deposited. As the thickness of ta-C coating was increased, hardness decreased from 58 to 49 GPa, which means that graphitization was accelerated. Therefore, now we are trying to increase $sp^3$ fraction of ta-C coating and control the coating parameters for thermal stability of thick ta-C at high temperatures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.221-221
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• 2014

The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• 대한금속재료학회지
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• 제46권11호
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• 대한금속재료학회지
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• 제47권5호
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.