• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.628-635
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• 2004

The characteristic of thin film resistor with low TCR( temperature coefficient of resistance ) and high precision are studied. The thin film resistor for 1/4W was fabricated and characteristic of these resistors was investigated. The fabricated device had the thickness of $2.48{\leqq}$ and the resistivity of $0.27{\omega}mm$. The electrical characteristic was evaluated by HP 4339B and 4284A instruments with HP l6339A. The profile of trimmed structure was also measured by non contact interferometer. The change of resistance and TCR increased with increasing roughness and resistance. To reduce the effect of stress annealing treatment was performed in the range of 563 to 623 K after trimming. The characteristic was improved after annealing. It is expected the fabricated device can be useful for high precision and low TCR. Fabricated thin film resistor has average deviation of resistance less than $0.35{\%}$ and TCR within 60.60ppm/K.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.13-20
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• 1995

To develope a high precision TiAIN thin film resistor, TiAIN films were deposited on A1$_{2}$03 substrates by reactive planar magnetron cosputtering from Ti and Al targets in an Ar-N$_{2}$ atmosphere. The characteristics of the TiAIN thin film were controlled by changing of the R.F. power on Ti and Al targets, and the N$_{2}$ partial pressure. The high precision TiAIN thin film resistor with TCR(Temperature Coefficient of Resistance) of less than 10ppm/.deg. C was obtained under the R.F. power condition of 160(w)/240(w) to Ti and Al targets at the N$_{2}$ partial pressure of 7*10$^{-5}$ Torr. The composition of these films were investigated by XRD, SEM and EDS.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.1-7
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• 2005

The effect of trimming process to adjust accurate resistance of a thin-film resistor was studied with respect to low temperature coefficient of resistance(TCR) and high precision. The characteristics of a thin-film resistor fabricated by sputtering were investigated depending on trimming condition and annealing temperature. Measured results showed that the characteristic of a thin-film resistor was degraded with increased trimming speed. However, an average resistance deviation and a TCR were improved to $0.26\%$ and 52.77[ppm/K], respectively, through annealing treatment. Also, thin-film resistors with 1 k$\Omega$ and 10k$\Omega$ showed better performance compared to a resistor with 100k$\Omega$. The Optimal trimming speed and annealing temperature were 20mm/sec and 539K, respectively, and under this optimal condition, a thin-film resistor with an average resistance deviation of $0.31\%$ and a TCR of below 10[ppm/K] was obtained.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1476-1478
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1014-1017
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• 2001

In recent years, The tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, The effect of thermal annealing in the temperature range of 300∼700$^{\circ}C$ on the sheet resistor properties and microistructure of tantalum nitride(TaN) thin-film deposited by RF sputtering was studied. XRD(X-ray diffractometer) and AFM were used to observe electrical properties and microstructrue of the TaN film and sheet resistance. The TCR properties of the TaN films were discussed in terms of annealing temperature, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. The leakage current of the TaN thin film annealed 400 $^{\circ}C$ was stabilized in the study. How its was found that the sheet resistance in the polycrystalline TaN thin film decreased with increasing the annealing temperature above 600 $^{\circ}C$ after sudden peak upen 400 $^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.168-170
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• 2001

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on corning glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then 10 ppm/$^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.57-62
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• 2008

From the progressing results, it was found that thin film using 52 wt% Ni - 38 wt% Cr - 3 wt% Al - 4 wt% Mn - 3 wt% Si target has good characteristics for low TCR (temperature coefficients of resistance) and high resistivity. The optimum sputtering condition was DC 250 W, 5 mtorr, and 50 sccm and the proper annealing condition was $350^{\circ}C$/3.5 hr in air atmosphere. At these fabricated conditions, thin film resistors with TCR values of less than ${\pm}10ppm/^{\circ}C$ were obtained. The TCR of the packaged-samples made at proper fabrication conditions was $-3{\sim}15ppm/^{\circ}C$ after the thermal cycling and $-20{\sim}180ppm/^{\circ}C$ after PCT (pressure cooker test), we could confirm reliability for the thin film resistor and find the need for enduring research about packaging method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.