• 전기화학회지
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• 제18권1호
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• pp.7-16
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• 2015

전기도금공정을 이용하여 상온에서 제조된 Cu박막의 특성에 미치는 피로인산구리용액의 화학성분($Cu^{2+}$ 농도, $K_4P_2O_7$ 농도, 첨가제 농도)의 영향에 대한 연구를 수행하였다. 전류효율은 도금용액의 $Cu^{2+}$ 농도가 0.3 M까지 높아짐에 따라 거의 100%까지 증가하는 경향을 나타내었다. $K_4P_2O_7$ 농도는 1.5~1.8 M 농도에서 전류효율의 감소를 나타내었으나, 0.9~1.3 M과 2.1~2.4 M에서는 거의 100%의 전류효율을 나타내었다. 첨가제의 농도 변화는 전류효율에는 거의 영향을 미치지 않았다. 전기도금 된 Cu 박막의 잔류응력은 도금용액의 $Cu^{2+}$ 농도가 0.15 M 이하에서는 약 20 MPa로 측정되었으나, $Cu^{2+}$ 농도가 증가함에 따라 증가하다가 0.25 M 에서 약 120 MPa의 최대치를 나타내었다. 한편 도금용액의 $K_4P_2O_7$ 농도가 0.9 M로부터 2.4M로 증가할수록 잔류 응력은 80MPa로부터 0 MPa까지 감소하는 경향을 나타내었으며, 첨가제의 농도는 잔류응력에 영향을 미치지 않은 것으로 관찰되었다. 표면형상의 경우 $Cu^{2+}$ 농도와 $K_4P_2O_7$ 농도는 상당한 영향을 미쳤으나, 첨가제는 약간의 영향만을 나타내었다. XRD 분석 결과 $Cu^{2+}$ 농도와 $K_4P_2O_7$ 농도는 Cu 박막의 미세조직에 상당한 영향을 미쳤으나, 첨가제는 거의 영향을 미치지 않는 것으로 나타났다. $Cu^{2+}$ 농도와 $K_4P_2O_7$ 농도가 증가할수록 (111) 피크의 강한 우선방향성이 나타내었다.

• 한국세라믹학회지
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• 제35권8호
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• pp.813-818
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• 1998

A simple method to measure the elastic modulus E and Poisson's ratio v of diamod-like carbon (DLC) films deposited on Si wafer was suggested. Using the anisotropic etching technique of Si we could make the edge of DLC overhang free from constraint of Si substrate. DLC film is chemically so inert that we could not on-serve any surface damage after the etching process. The edge of DLC overhang free from constraint of Si substrate exhibited periodic sinusoidal shape. By measuring the amplitude and the wavelength of the sinu-soidal edge we could determine the stain of the film required to adhere to the substrate. Since the residual stress of film can be determine independently by measurement of the curvature of film-substrate com-posite we could calculated the biaxial elastic modulus E/(1-v) using stress-strain relation of thin films. By comparing the biaxial elastic modulus with the plane-strain modulus E/(1-{{{{ { v}^{2 } }}) measured by nano-in-dentation we could further determine the elastic modulus and Poisson's ratio independently. This method was employed to measure the mechanical properties of DLC films deposited by {{{{ { {C }_{6 }H }_{6 } }} rf glow discharge. The was elastic modulus E increased from 94 to 169 GPa as the {{{{ { V}_{ b} / SQRT { P} }} increased from 127 to 221 V/{{{{ {mTorr }^{1/2 } }} Poisson's ratio was estimated to be abou 0.16∼0.22 in this {{{{ { V}_{ b} / SQRT { P} }} range. For the {{{{ { V}_{ b} / SQRT { P} }} less than 127V/{{{{ {mTorr }^{1/2 } }} where the plastic deformation can occur by the substrate etching process however the present method could not be applied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.6-6
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• 2010

This paper describes that single crystal cubic silicon (3C-SiC) films have been deposited on carbonized Si(100) substrate using hexamethyldisilane(HMDS, $Si_2(CH_3)_6$) as a safe organosilane single-source precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The 3C-SiC film had a very good crystal quality without defects due to viods, a very low residual stress.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
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• pp.31-34
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing(CMP) process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum 89 arcses. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Sapphire wafers's waveness has higher abrasion rate in the edge of the wafer than its center due to Newton's Ring interference.

• 대한기계학회논문집A
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• 제28권1호
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• pp.85-91
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• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum of 89 arcsec. The surfaces of sapphire wafer were mechanically affected by residual stress during the polishing process. The wave pattern of optical interference of sapphire wafer implies higher abrasion rate in the edge of the wafer than its center from the Newton's ring.

• 센서학회지
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• 제30권5호
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• pp.273-278
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• 2021

Here, we studied the change in the mechanical stiffness of a diaphragm according to the corrugation pattern. The diaphragm consists of a silicon oxide and nitride double layer; a corrugation pattern was formed by dry etching, and the diaphragm was released by wet etching. The fabrication of the thin film was verified using focused ion beam and scanning electron microscopy images. The mechanical stiffness of the diaphragm was obtained by measuring the surface vibration using a laser Doppler vibrometer while applying external sound pressure. Flat squares, diaphragms with square corrugations, and circular corrugation patterns were measured and compared. The stiffness of the diaphragm with a corrugation structure was found to be smaller than that without a corrugation structure; in particular, circular corrugation showed a better effect because of the high symmetry. Furthermore, the effect of corrugation was theoretically predicted. The proposed corrugated diaphragm showed comparable flexibility with the state-of-the-art MEMS microphone diaphragm.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.84-87
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• 2003

Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

• 한국해양공학회지
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• 제32권6호
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• pp.502-510
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• 2018

In order to accumulate data to lower the friction coefficient of a press mold, tribological tests were performed before and after coating SM45C with a PVC/PO film and plasma coating (CrN, concept). The ultrasonic nanocrystal surface modification (UNSM)-treated material had a nano-size surface texture, high surface hardness, and large and deep compressive residual stress formation. Even when the load was doubled, the small amount of abrasion, small weight of the abrasion, and width and depth of the abrasion did not increase as much as those of untreated materials. A comparison of the weight change before and after the tribological test with the CrN and the concept coating material and that of the untreated material showed that the wear loss of the concept coating material and P-UNSM treated material (that is, the UNSM treated material treated with the concept coating) showed a tendency to decrease by approximately 55-75%. Concept 100N had a lower friction coefficient of about 0.6, and P-UNSM-30-100N showed almost the same curve as concept 100N and had a low coefficient of friction of about 0.6. The concept multilayer coating had a thickness of $5.32{\mu}m$. In the beginning, the coefficient of friction decreased because of the plasma coating, but it started to increase from about 250-300 s. After about 350 s, the coefficient of friction tended to approach the friction coefficient of the SM45C base metal. The SGV-280F film-attached test specimen was slightly pushed back and forth, but the SM45C base material was not exposed due to abrasion. The friction coefficient was 0.22, which was the lowest, and the tribological property was the best in this study.

• 한국진공학회지
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• 제21권6호
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• pp.328-332
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• 2012

Ag (silver)의 일함수는 T-OLED (Top Emission Organic Light Emitting Diode)의 전극소자로 사용하기에는 다소 낮다는 단점이 있다(~4.3 eV). 이러한 단점을 해결하기 위한 대안으로 Ag 박막의 표면을 플라즈마, UV, 열처리를 통하여 일함수를 높이는 연구가 진행되어 왔다(~5.0 eV). 하지만 현재의 대부분 연구는 후 처리된 박막의 일함수에 초점을 맞춰 연구가 진행되어, 박막의 mechanical property에 대한 연구는 매우 부족하며 이는 T-OLED의 효율과 수명 등의 연구에 매우 중요하다. 본 논문에서는 Ag와 $AgO_x$ 박막의 mechanical property에 초점을 맞춰 분석을 실시하였다. Ag는 유리기판 위에 rf-magnetron sputter를 이용하여 100 W의 power에서 150 nm 두께로 증착되었다. 증착된 박막은 UV 램프를 이용하여 다양한 시간동안 UV 처리되었다(0~9분). 본 논문에서는 처리된 박막의 면저항을 측정하고 nano indenter, Scanning Probe Microscopy의 Atomic Force Microscopy mode를 이용하여 mechanical property를 분석하였다. 실험 결과 UV 처리 시간이 3분을 넘어가는 시편과 3분 이내의 시편은 면저항값 및 경도 값에 큰 차이가 있었다. 이러한 결과는 Ag 박막의 후처리에 따른 Ag 물질의 산화 및 결합상태에 따라 박막 내에 존재하는 stress의 영향으로 예상되어진다.

• 한국재료학회지
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• 제9권8호
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• pp.792-797
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• 1999

고체 산화물 연료전지의 전해질로 주로 사용되는 8mol.%$Y_2$$O_3$-$ZrO_2$는 전기 전도성은 우수하나 기계적 특성이 좋지 못하므로, 전기적 특성과 기계적 특성이 동시에 우수한 고체산화물 연료전지의 전해질의 개발이 요구되고 있다. 본 연구는 이러한 두 가지 요구조건을 충족시키기 위해서 수행되어졌다. 단위전지의 공기극 재료인 LSM(La(sub)0.75Sr(sub)0.25MnO$_3$) 기판과 Si wafer를 기판으로 기계적 성질이 우수한 3mol.%의 YSZ(3-YSZ)와 전기 전도성이 우수한 8mol.%의 YSZ(8-YSZ)를 각각 단층 및 다층 박막의 네 가지 형태로 전자빔 코팅에 의해 전해질 막을 제작하였다. 박막층의 분석결과, 결정조직은 증착된 3-YSZ 박막의 정방정 및 일부 단사정 구조, 8-YSZ 박막은 입방정 구조의 결정성이 나타났다. 단층막 보다 다층막이 낮은 내부 응력을 보였으며, 다층막이 기존의 8-YSZ 단층막의 열처리 전, 후와 비슷한 미세 경도 값을 보였다.