• Title/Summary/Keyword: Thickness dependence

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The Thickness Dependence of Edge Effect in Thin Insulating Films

  • Song Jeong-Myen;Moon Byung-Moo;Sung Yung-Kwon
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.4
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    • pp.13-17
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    • 2003
  • This paper deals with the edge effect in thin insulating films, focusing on their dependence on film thickness. The finding is that the electric field is lowered at the edge as the film thickness is reduced, which, in turn, is closely related to dielectric breakdown voltage. In order to analyze this phenomenon, a simple capacitor model is introduced with which dependence of dielectric breakdown voltage around the electrode edge on the film thickness is explained. Due to analytical difficulty to get the expression of electrical field strength at the edge, an equivalent circuit approach is used to find the voltage expression first and then the electric field expression using it. The relation gets to an agreement with the experimental findings shown in the paper. This outcome may be extended to solve similar problems in multi-layer insulating films.

A Study on Thickness and Temperature Dependence of Dielectric Breakdown in Polyethylene (폴리에틸렌의 절연파괴와 그의 온도 및 두께의존성)

  • Kim, Jeom-Sik;Lee, Jong-Bum;Jung, Woo-Kyo;Kim, Mi-Hang;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1388-1390
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    • 1995
  • The characteristic of dielectric breakdown in solid insulating material dominates the reliability and safety of power equipment and affects directly to its life. In this point of view, the thickness and temperature dependence of dielectric breakdown strength and mechanism of dielectric breakdown in low density polyethylene which has been employed widely as insulating material have been technically reviewed by examinations of thermal property. The dielectric breakdown strength depending on its thickness was measured 2.6[MV/cm] at the thickness of 20[${\mu}m$] and 1.9[MV/cm] at the thickness of 75[${\mu}m$] based on ambient temperature of 30[$^{\circ}C$]. It is shown the temperature dependence that dielectric breakdown strength decreases in linear as the thickness increases. The dielectric breakdown strength depending on temperature was measured 2.6[MV/cm] at the temperature of 30[$^{\circ}C$], 1.6[MV/cm] at 60[$^{\circ}C$] and 1.3[MV/cm] at 90[$^{\circ}C$] based on the thickness of 20[${\mu}m$]. As the ambient temperature increases, the temperature dependence is shown that a very large drop is occurred up to temperature of 60[$^{\circ}C$] and a very small drop is discovered over 60[$^{\circ}C$].

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Thickness Dependence of the Crystallization of FePt/MgO(001) Magnetic Thin Films (FePt/MgO(001) 자성박막 결정화의 두께의존성)

  • Jeung, Ji-Wook;Yi, Min-Soo;Cho, Tae-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.2
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    • pp.153-158
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    • 2010
  • The crystallization of FePt/MgO(001) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 499-$\AA$-thick, face-centered tetragonal, ordered FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 816-$\AA$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

Thickness dependence of the piezoelectric characteristic for PZT films using by rf magnetron sputtering (RF 마그네트론 스퍼터링으로 증착한 두께에 따른 PZT 박막의 강유전 특성에 관한 연구)

  • Lee, Tae-Yong;Park, Young;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.313-316
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    • 2003
  • The lead zirconate titanate, $Pb(Zr_{0:52}Ti_{0:48})O_3$, films of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$ thickness were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the rf magnetron sputtering method. The PZT films were annealed using by a rapid thermal annealing (RTA) method. The thickness dependence of the film structure, dielectric properties, Polarization-electric field hysteresis loops and capacitance-voltage characteristics were investigated over the thickness range of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$. According to the XRD patterns of the films, (110) peak intensity increases with film thickness increased. The increase of PZT films thickness leads to the decrease of the remanent polarization and the dielectric constant.

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Temperature Dependence Change of Electrical Resistivity on PdHx Films due to Film Thickness Change (PdHx 박막의 두께 변화에 의한 전기비저항의 온도 의존성 변화)

  • Cho, Young-sin
    • Transactions of the Korean hydrogen and new energy society
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    • v.6 no.1
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    • pp.17-22
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    • 1995
  • Thermally evaporated Pd films on substrate were hydrogenated upto 1 bar of hydrogen gas at room temperature. Temperature dependence hange of electrical resistivity on Pd films is examined in the thickness range between $60{\AA}$ and $990{\AA}$. Resistivity of Pd is fitted well with Bloch-$Gr{\ddot{u}}neisen$ formula. Debye temperatures of Pd films are about 254 K, which are 20 K lower than that of bulk Pd. Debye temperature is not sensitive to film thickness change. Temperature of substrate during evaporation changes temperature dependence of resistivity of films much. Optical phonon contribution increases with decreasing temperature of PdHx.

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Surface silicon film thickness dependence of electrical properties of nano SOI wafer (표면 실리콘막 두께에 따른 nano SOI 웨이퍼의 전기적 특성)

  • Bae, Young-Ho;Kim, Byoung-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.7-8
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    • 2005
  • The pseudo MOSFET measurement technique has been a simple and rapid method for characterization of SOI wafers without any device fabrication process. We adopted the pseudo MOSFET technique to examine the surface silicon film thickness dependence of electrical properties of SOI wafer. The measurements showed that turn-on voltage increased and electron mobility decreased as the SOI film thickness was reduced in the SOI film thickness of less than 20 nm region.

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Thickness Dependence of Stress Currents in Silicon Oxide (실리콘 산화막에서 스트레스 전류의 두께 의존성)

  • 강창수;이형옥;이성배;서광일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.102-105
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    • 1997
  • The thickness dependence of stress voltage oxide currents has been measured in oxides with thicknesses between 10nm and 80nm. The oxide currents were shown to be composed of stress current and transient current. The stress current was caused by trap assited tunneling through the oxide. The transient current was caused by the tunneling charging and discharging of the trap in the interfaces. The stress current was used to estimate to the limitations on oxide thicknesses. The transient current was used to the data retention in memory devices.

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Temperature Dependence of Galvanomagnetic Properties in Thin Bi Film

  • Nam, S.W.
    • Journal of Magnetics
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    • v.4 no.4
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    • pp.111-114
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    • 1999
  • Numerical calculation for temperature dependence of galvanomagnetic properties of thin bismuth films is pursued. The quasi-two dimensional system is treated in the perturbation formalism of previous study, where realistic screened potential due to impurity is assumed to be the only scattering channel. The potential is separated into pure two dimensional part and the remaining presumed perturbation part. Relaxation time and mobilities for both electron and hole are evaluated, then temperature dependence of the Hall coefficient and magnetoresistance is obtained. The broad minimum of magnetoresistnace is manifested, and the interpretation under the kinetic theory is made. Thickness dependence of the quantities are also shown, which are in good agreement with the expected quantum size effect.

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Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy

  • Kim, Beong-Ju
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.6
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    • pp.299-303
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    • 2002
  • The relationship of crystallinity between defects distribution with (100) ZnTe/GaAs using HWE growth was investigated by four crystal rocking curve (FCRC) and transmission electron microscopy (TEM). The thickness dependence of crystal quality in ZnTe epilayer was evaluated. The FWHM value shows a strong dependence on ZnTe epilayer thickness. For the films thinner than 6 ${\mu}{\textrm}{m}$, the FWHM value decreases very steeply as the thickness increases. For the films thicker than 6 ${\mu}{\textrm}{m}$, it becomes an almost constant value. At the thickness of 12 $\mu\textrm{m}$ with the smallest value of 66 arcsec. which is the best value so far reported on ZnTe epilayers was obtained. Investigation into the nature and behavior of dislocations with film thickness in (100) ZnTe/(100)GaAs heterostructures grown by Hot Wall Epitaxy (HWE). This film defects range from interface to 0.7 ${\mu}{\textrm}{m}$ thickness was high density, due to the large lattice mismatch and thermal expansion coefficients. The thickness of 0.7~1.8 ${\mu}{\textrm}{m}$ was exists low defect density. In the thicker range than 1.8 ${\mu}{\textrm}{m}$ thickness was measured hardly defects.

Thickness Dependence of GZO Gas Sensing Films Deposited on LTCC Substrates (LTCC 기판상에 증착한 GZO 가스 센싱 박막의 두께 의존 특성 연구)

  • Hwang, Hyun Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.3
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    • pp.215-218
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    • 2011
  • A novel design of gas sensor using Ga-doped ZnO (GZO) thin films which are deposited on low temperature co-fired ceramic (LTCC) substrates is presented. The LTCC substrates with thickness of 400 ${\mu}m$ are fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The GZO thin films with different thickness are deposited on LTCC substrates, by RF magnetron sputtering method. The microstructure and sensing properties of GZO gas sensing films are analyzed as a function of the film thickness. The films are well crystallized in the hexagonal (wurzite) structure with increasing thickness. The maximum sensitivity of 3.49 is obtained at 100 nm film thickness and the fastest 90% response time of 27.2 sec is obtained at 50 nm film thickness for the operating temperature of $400^{\circ}C$ to the $NO_2$ gas.