• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.68-72
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• 2003

In this paper, we developed a new thick photoresist fabrication technology for 3-dimensional microstructures. In general, like as AZ photoresist was coated with thin film thickness about 1 $\mu\textrm{m}$ to 30 $\mu\textrm{m}$, but photoresist like SU-8 has thickness of several tens $\mu\textrm{m}$ or more and high aspect ratio. When we fabricate a microstructure using the thick photoresist like SU-8, cracks on the SU-8 thick photoresist are appeared by stress which was caused by sudden cooling down during bake of the thick photoresist spun on wafer. Thus, it was hard to fabricate the microstructure using the thick photoresist for electroplating. In this paper, we developed a new process to produce a 3-dimensional microstructure without the crack by stress through a suitable thick photoresist coating, time control of cool down and time control of PEB (Post Expose Bake).

• Transactions of Materials Processing
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• v.20 no.2
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• pp.93-98
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• 2011

Electroforming is a kind of metal molding technology. After gilding on the possession object(conductivity, nonconductivity) separate it with possession object and produce a part or duplicate. This process has an excellent ability of duplicating detailed figure. To simplify the manufacturing process of a rotary screen, this study was adopted electroforming technology and produced silicon rubber mandrel. Furthermore, to indicate the optimal condition for the acquisition of high-qualified rotary screen product, the experiment was executed with pH, time, sulfamate nickel solution according to density which were the main factors to decide the condition, then compared it with the product made by original "S" company in Holland. As a result, the figure of hole was more obvious and correct. Also the open size increased by more than 2-3%.

• Journal of the Semiconductor & Display Technology
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• v.16 no.3
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• pp.36-40
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• 2017

In this paper, a new method of laser trimming of thick film heater is studied. Various laser waves (IR, Green, UV) are used to ablation the heater and the process parameters are also presented. For given initial printed resisters, the cutting length should be prepared to obtain the target resister value in advance. Therefore, the cutting model is very important. The well-known model was tested and proven that it is valid only within a certain range of cutting length. A new model is proposed for a wide range of resister laser trimming. The cutting lengths and resister variation was obtained and formulated. To verify the presented method, the cutting lengths of each resister are calculated for various target resister value and laser trimming using UV is conducted.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.21-27
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• 1996

Thick film $TiO_{2}/WO_{3}$ butane gas sensors were fabricated by the screen printing method and their gas sensing characteristics were investigated. The sensitivity of $TiO_{2}/WO_{3}$ thick film was higher than that of pure $WO_{3}$ film to butane. The $WO_{3}$ film with 2wt.% $TiO_{2}$ showed the highest sensitivity to butane. And the optimum heat treatment temperature was $650^{\circ}C$. That film showed the highest sensitivity to butane at the operating temperature of $350^{\circ}C$. The sensitivity of the film to 20000ppm butane in air was 80% at the operating temperature of $350^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.83-89
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• 2015

In this paper, we propose a fabrication technique for enhanced electrical properties of piezoelectric thick films with excellent patterning property using sol-infiltration and a direct-patterning process. To achieve the needs of high-density and direct-patterning at a low sintering temperature (< $850^{\circ}C$), a photosensitive lead zirconate titanate (PZT) solution was infiltrated into a screen-printed thick film. The direct-patterned PZT films were clearly formed on a locally screen-printed thick film, using a photomask and UV light. Because UV light is scattered in the screen-printed thick film of a porous powder-based structure, there are needs to optimize the photosensitive PZT sol infiltration process for obtaining the enhanced properties of PZT thick film. By optimizing the concentration of the photosensitive PZT sol, UV irradiation time, and solvent developing time, the hybrid films prepared with 0.35 M of PZT sol, 4 min of UV irradiation and 15 sec solvent developing time, showed a very dense with a large grain size at a low sintering temperature of $800^{\circ}C$. It also illustrated enhanced electrical properties (remnant polarization, $P_r$, and coercive field, $E_c$). The $P_r$ value was over four times higher than those of the screen-printed films. These films integrated on silicon wafer substrate could give a potential of applications in micro-sensors and -actuators.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.23-29
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• 1996

Thick film type gas sensors with parallel Pt heaters were fabricated by screen printing process and investigated sensitivities for methane gas. The TR7905 was selected as Pt paste for heater by characterization the properties of TCRs and thick film microstructures. The average resistance of parallel Pt heaters was $1.8{\Omega}$, and the best TCR obtained was $3685\;ppm/^{\circ}C$. On the top of the Pt heaters, a sensing layer added with Pt and Pd as catalyst paste was screen printed and heat treated. The sensitivity of the sensor was 4.3mV/1000ppm for methane. The power consumption of the sensors was 2.12watts.

• Progress in Superconductivity and Cryogenics
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• v.5 no.2
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• pp.41-45
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• 2003

Resistance distribution in thin film type SFCL elements of different shunt layer thickness was investigated. The 300 nm thick film of 2 inch diameter was coated with a gold layer and patterned into 2 mm wide meander lines. The shunt layer thickness was varied by ion milling the shunt layer with Ar ions, and also by having the shunt layer grown in different thickness. The SFCL element was subjected to simulated AC fault current for measurements. It was immersed in liquid nitrogenduring the experiment. The resistance distribution was not affected by the shunt layer thickness at applied voltages that brought the temperature of the elements to similar values. This result could be explained with the concept of heat transfer from the film to the surroundings. The resistance distribution was independent of the shunt layer thickness because thick sapphire substrates of high thermal conductivity dominated the thermal conductance of the elements.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.23-29
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• 2013

Development of flexible electronic devices has primarily focused on printing technology using organic materials. However, organic-based flexible electronics have several disadvantages, including low electrical performance and long-term reliability. Therefore, we fabricated nano- and micro-thick silicon film attached to the polymer substrate using transfer printing technology to investigate the feasibility of silicon-based flexible electronic devices with high performance and high flexibility. Flexibility of the fabricated samples was investigated using bending and stretching tests. The failure bending radius of the 200 nm-thick silicon film attached on a PI substrate was 4.5 mm, and the failure stretching strain was 1.8%. The failure bending radius of the micro-thick silicon film attached on a FPCB was 2 mm, and the failure strain was 3.5%, which showed superior flexibility compared with conventional silicon material. Improved flexibility was attributed to a buffering effect of the adhesive between the silicon film and the substrate. The superior flexibility of the thin silicon film demonstrates the possibility for flexible electronic devices with high performance.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.263-268
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• 2009

With the increasing number of automobiles, the problem of air pollution from the exhaust gases of automobiles has become a critical issue. The principal gases that cause air pollution are nitrogen oxide or NO$_x$(NO and NO$_2$), and CO. Because NO$_x$ gases cause acid rain and global warming and produce ozone(O$_3$) that leads to serious metropolitan smog from photochemical reaction, they must be detected and reduced. Mixtures of WO$_3$ and $In_2O_3$(WO$_3$:$In_2O_3$=10:0, 7:3, 5:5, 3:7, and 0:10 in wt.%), which are NO$_x$ gas-sensing materials, were prepared, and thick-film gas sensors that included a heater and a temperature sensor were fabricated. Their sensitivity to NO$_x$ was measured at 250$\sim$400$^{\circ}C$ for NO$_x$ concentrations of 1$\sim$5 ppm. The $In_2O_3$ thick-film sensor showed excellent sensitivity($R_{gas}/R_{air}$=10.22) at 300$^{\circ}C$ to 5-ppm NO. The response time for 70 % saturated sensitivity was about 3 seconds, and the sensors exhibited very fast reactivity to NO$_x$.

• Corrosion Science and Technology
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• v.21 no.4
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• pp.290-299
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• 2022

Anodizing is an electrochemical surface treatment method conferring corrosion resistance and durability by forming a thick anodization film on the metal surface. Aluminum has a long service life and high thermal conductivity and formability, as well as excellent corrosion resistance. Aluminum 3003 alloy has improved formability, strength, and corrosion resistance due to the addition of a small amount of manganese. However, corrosion occurs in seawater and environments polluted with corrosion-inducing substances, which reduce corrosion resistance. Therefore, it is necessary to artificially form a thick anodized film to improve corrosion resistance. In this study, the anodization treatment time was 4 minutes, and voltages of 10 V, 20 V, 30 V, 40 V, 50 V, 60 V, 70 V, 80 V, 90 V, and 100 V were applied. The thickness and pore size of the oxide film increased according to the applied voltage. A barrier film was formed under voltage conditions from 10 V to 50 V, and a porous film was formed under voltage conditions from 60 V to 100 V. After anodizing, coating was applied. Wettability and corrosion resistance were observed before and after coating according to the surface shape and thickness of the oxide film.