• 센서학회지
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• 제18권1호
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• pp.54-62
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• 2009

${Co_3}{O_4}$ and ${Co_3}{O_4}$-based thick films with additives such as ${Co_3}{O_4}-{Fe_2}{O_3}$(5 wt.%), ${Co_3}{O_4}-{SnO_2}$ (5 wt.%), ${Co_3}{O_4}-{WO_3}$(5 wt.%) and ${Co_3}{O_4}$-ZnO(5 wt.%) were fabricated by screen printing method on alumina substrates. Their structural properties were examined by XRD and SEM. The sensitivities to iso-${C_4}H_{10}$, $CH_4$, CO, $NH_3$ and NO gases were investigated with the thick films heat treated at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. From the gas sensing properties of the films, the films showed p-type semiconductor behaviors. ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film heat treated at $600^{\circ}C$ showed higher sensitivity to i-${C_4}H_{10}$ and CO gases than other thick-films. ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film heat treated at $600^{\circ}C$ showed the sensitivity of 170 % to 3000 ppm iso-${C_4}H_{10}$ gas and 100 % to 100 ppm CO gas at the working temperature of $250^{\circ}C$. The response time to i-${C_4}H_{10}$ and CO gases showed rise time of about 10 seconds and fall time of about $3{\sim}4$ minutes. The selectivity to i-${C_4}H_{10}$ and CO gases was enhanced in the ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film.

• 열처리공학회지
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• 제3권1호
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• pp.17-24
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• 1990

In this study, TiN film was deposited onto steel by R.F.-PACVD in order to investigate the influence of parameters on the adhesion strength between film and substrate. Experimental results showed that adhesion strength by SAT is different from by optical microscopy. Adhesion strength is increased when the deposition temperature increases and is influenced by R.F. power and electrode distance. Especially heat treatment on the substrate has influenced over the adhesion strength, so it showed the 22 Newtons in adhesion strength by SAT and adhesion strength is decreased when deposition thickeness is thick and hardness is high. Also if the film is thick and high hardness simultaneous, the film was delaminated seriously.

• 마이크로전자및패키징학회지
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• 제8권2호
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• pp.43-48
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• 2001

Economical consumption of energy, longer life of lamps, higher lighting comfort and new aesthetic of illumination is subject of numerous research and development works. The halogen lamps are an example of positive solution some of above mentioned problems. The electronic transformers are more frequent used for their supply. In comparison with conventional transformers they have less weight, less volume and 60% less power losses. Their advantages are particular visible, when the hybrid technique is applied. The paper presents the results of engineering research and development works carried out in Private Institute of Electronic Engineering, in R. & D. Center for Hybrid Microelectronics and Resistors and in Technical School of Communications in Krakow, in the field of the design and exploitation tests of hybrid converters 220V AC /12V DC (electronic transformers) and electronic ballasts destined for the supply of halogen lamps 20W to 150W and fluorescent lamps respectively. To perform the converters, thick film technology and surface mount technology were used. For the protection of converter electronic circuit the thick film temperature sensor and transistors were applied. Moreover the paper presents the base application circuits of elaborated converters, their technical parameters and exploitation results. The development perspectives of such domain of hybrid circuits are also discussed.

• 한국재료학회지
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• 제12권12호
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• pp.930-934
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• 2002

Nanosized $WO_3$ powders were synthesized by the sol-precipitation process using $WCl_{6}$ as the starting material, ethanol as a solvent and $NH_4$OH solution as a precipitant, followed by a washing-drying treatment and calcination. The effects on the powder crystallinity and microstructure of calcination temperature were investigated with XRD and FE-SEM. The $WO_3$ powders calcined at $500^{\circ}C$ and $700^{\circ}C$ showed good crystallinity and their mean particle size was 30nm and 70nm, respectively. These powders were used for the preparation of pastes which were printed as thick films on alumina substrates with comb-type Pt electrodes. The particle size strongly influenced the $NO_2$ gas sensing property of the thick films. A significant reduction in the $NO_2$ sensitivity was observed for the film prepared from larger particle size, having thus a larger grain size. For the film having a smaller grain size, on the other hand, the higher $NO_2$ sensitivity was observed and the sensitivity increased with $NO_2$ concentration.

• 한국표면공학회지
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• 제50권5호
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• pp.301-307
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• 2017

The purpose of this study is to investigate the electrical properties of thick-film resistor (TFR) prepared from $CaO-ZnO-B_2O_3-Al_2O_3-SiO_2$ (CZBAS) glass containing $RuO_2$ particles. $RuO_2$-glass composite powder was made by mixing and melting oxide powders of constituents. For comparison, $RuO_2$ powder was simply mixed with glass powder. $RuO_2$-40wt% glass composite and mixture were dispersed in an organic binder to obtain printable resistor paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C/min$ in an ambient atmosphere. $RuO_2$-glass composite sample showed much higher resistance compared to the simple mixed sample. This could be attributed to the difference in conducting mechanism. After sintering at $850^{\circ}C$, temperature coefficient of resistance of composite sample was lower than that of simple-mixed sample. TFR with dense and homogeneous microstructure could be obtained by using $RuO_2$-glass composite powder.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.523-524
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• 2007

This paper discusses the planarization process of thick copper film structure used for power supply device. Chemical mechanical polishing(CMP) has been used to remove a metal film and obtain a surface planarization which is essential for the semiconductor devices. For the thick metal removal, however, the long process time and other problems such as dishing, delamination and metal layer peeling are being issued, Compared to the traditional CMP process, Electro-chemical mechanical planarization(ECMP) is suggested to solve these problems. The two-step process composed of the ECMP and the conventional CMP is used for this experiment. The first step is the removal of several tens ${\mu}m$ of bulk copper on patterned wafer with ECMP process. The second step is the removal of residual copper layer aimed at a surface planarization. For more objective comparison, the traditional CMP was also performed. As an experimental result, total process time and process defects are extremely reduced by the two-step process.

• 한국응용과학기술학회지
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• 제17권4호
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• pp.273-278
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• 2000

Cellulose tosylate(CT) was prepared by reaction of cellulose with p- toluenesulfonylchloride in DMAc/LiCl homogeneous system. In order to study a reversible photoisomerization of disperse red 1(DR-1) attached on natural polymer, cellulose tosylate containing DR-1(DR-1/CT adduct) was prepared at $110^{\circ}C$ in DMAc, and the changes of UV/Vis spectra of its solutions and thick film were investigated by alternate irradiation technique. Form the UV/Vis spectra of DR-1/CT adduct dissolved in cosolvents, such as DMAc, DMAc/THF, DMAc/benzene, and DMAc/chloroform and irradiated with 360 nm and 450 nm ligths, we found out changes of UV/Vis spectra were reversible in all solvents systems and we found out changes of UV/Vis spectra were reversible at thick film, also.

• 한국재료학회지
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• 제9권7호
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• pp.663-669
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• 1999

분산특성이 다른 두 종류의 Ag 분말과 점도가 다른 두 종류의 유리를 사용하여 Ag 후막 도체를 제조하고 이들이 후막의 미세구조에 어떠한 영향을 미치고 그 미세구조가 전기특성에 미치는 영향을 조사하였다. Ag 분말의 분산특성이 좋을수록 그리고 사용된 유리의 점도가 낮을수록 후막의 미세구조는 잘 발달된 치밀한 조직을 보였으며 면저항값도 감소하였다. 이는 Ag 분말의 분산특성이 좋을수록 용융 유리에 의한 Ag 입자들의 미세 재배치의 속도가 빨라지고, 또한 유리의 점도가 낮을수록 모든 미세구조 발전단계에서 그 속도가 증가하기 때문이며. 이러한 미세조직의 치밀화가 후막의 면저항값을 제어하기 때문이다. 소성시간이 증가하여도 더 이상 전기저항값의 저하가 없는 저항감소의 포화시간이 존재함을 확인하였으며, 이 포화시간 역시 후막의 미세구조에 크게 의존함을 알 수 있었다

• 마이크로전자및패키징학회지
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• 제18권4호
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• pp.63-70
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• 2011

Anorthite forming glass frits in amounts up to 25 vol% of the silver powder were added to improve the adhesion between the conductor pattern formed by thick film photoimageable process and the low temperature co-fired ceramics (LTCC) substrate. The sheet resistance of the conductor pattern was raised from 0.13 ${\Omega}/{\square}$ to 2.25 ${\Omega}/{\square}$ as the volume percentage of glass frit increased up to 25 vol%. The adhesion strength was improved with this glass frit increase, but it decreased when the glass content exceeded 20 vol% which are possibly attributed to the liquid pool effect and the reduced fracture toughness in the interface between conductor and LTCC layer. The shrinkage of the width of the conductor pattern decreased with the addition of glass contents.

• 한국세라믹학회지
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• 제54권3호
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• pp.243-248
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• 2017

Pd-doped $SnO_2$ thick film with a pure tetragonal phase was prepared on patterned Pt electrodes by an ink dropping method. Nanostructured $SnO_2$ powder with a diameter of 10 nm was obtained by a modified hydrazine method. Then the ink solution was fabricated by mixing water, glycerol, bicine and the Pd-doped $SnO_2$ powder. When the Pd doping concentration was increased, the grain size of the Pd-doped $SnO_2$ thick film became smaller. However, an agglomerated and extruded surface morphology was observed for the films with Pd addition over 4 wt%. The orthorhombic phase disappeared even at a low Pd doping concentration and a PdO peak was obtained for a high Pd doping concentration. The crack-free Pd-doped $SnO_2$ thick films were able to successfully fill the $30{\mu}m$ gap of the patterned Pt electrodes by the optimized ink dropping method. The prepared 3 wt% Pd-doped $SnO_2$ thick films showed monoxide gas responses ($R_{air}/R_{CO}$) of 4.0 and 35.6 for 100 and 5000 ppm, respectively.