• Title/Summary/Keyword: Thick film lithography

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The Study on the embedded capacitor using thick film lithography (후막 리소그라피 공정을 이용한 내장형 캐패시터 개발에 관한 연구)

  • Yoo, Chan-Sei;Park, Seong-Dae;Park, Jong-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.342-345
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    • 2002
  • As the size of chip components and module decreases, new patteming method for fine line and geometry is needed. So far, in LTCC(Low Temperature Cofired Ceramic) process, screen printing method has been used generally. But screen printing method has some disadvantages as follows. First, the geometry including line, vias, etc. smaller than $100{\mu}m$ can't be evaluated easily. Second, the patterned dimension is different from designed value, which makes distortion in charactersitics of not only chip components but also modules. Thick film lithography has advantages of thick film screen printing process, low cost and thin film process, fine line feasibility. Using this method, the line with $30{\mu}m$ width and the geometry with expected dimension can be evaluated. In this study, the fine line with $35{\mu}m$ line/space is formed and the embedded capacitor with very small tolerance is developed using thick film lithography.

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Photo-imageable Thick-Film Lithography Technology for Embedded Passives Fabrication (내장형 수동소자의 제조를 위한 포토 이미징 후막리소그라피 기술)

  • Lim, Jong-Woo;Kim, Hyo-Tea;Kim, Jong-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.303-303
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    • 2007
  • Photo-imageable thick-film lithography technology was developed for the fabrication of embedded passives such as inductors and capacitors. In this study, photo-imageable dielectric and conductor pastes have apoted a negative type. Sodalime glass wafer, alumina substrate and zero-shrinkage LTCC green tapes were used as substrates. In result, The lithographic patterns were designed as lines and spaces for conductor material, or via-holes for ceramic, LTCC, materials. The scattering and reflection of UV-beam on the substrate had negative effects on fine patterning. The patterning performance was varied with the exposing and developing process conditions, and also varied with the substrate materials. Fine resolution of less then $50/50{\mu}m$ in line and space was obtained, which is difficult in screen printing method.

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Study on the Compositions of Photosensitive Ag Paste for Patterning Embedded Fine-Line Inductor in LTCC (LTCC 내장형 미세 라인 인덕터 구현을 위한 감광성 Ag Paste 조성에 관한 연구)

  • Lee, Sang-Myoung;Park, Seong-Dae;Yoo, Myong-Jae;Lee, Woo-Sung;Kang, Nam-Kee;Nahm, Sahn
    • Journal of the Korean Ceramic Society
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    • v.44 no.3 s.298
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    • pp.157-161
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    • 2007
  • Line width under $100\;{\mu}m$ with good resolution is difficult to achieve using conventional thick-film process utilizing screen printing method. However combined with lithography technology finer line and space for miniaturization and highly integrated package is achievable. In this study, photosensitive Ag paste of optimum formulation used for thick film lithography technology was fabricated by various Ag powder, glass powder and additives. As the result, line width of $30\;{\mu}m$ with good definition and reduced mismatch during co-firing with LTCC substrate was acquired. Formulated Ag paste was used to pattern embedded fine line inductor with over 90% yield.

Fabrication of Superhydrophobic Film with Uniform Structures Using Two Step Lithography and Nanosilica Coating (Two step lithography와 나노 실리카 코팅을 이용한 초발수 필름 제작)

  • Yu, Chaerin;Lee, Dong-Weon
    • Journal of Sensor Science and Technology
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    • v.28 no.4
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    • pp.251-255
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    • 2019
  • We propose a two-step lithography process to minimize edge-bead issues caused by thick photoresist (PR) coating. In the conventional PR process, the edge bead can be efficiently removed by applying an edge-bead removal (EBR) process while rotating the silicon wafer at a high speed. However, applying conventional EBR to the production of desired PR mold with unique negative patterns cannot be used because a lower rpm of spin coating and a lower temperature in the soft bake process are required. To overcome this problem, a two-step lithography process was developed in this study and applied to the fabrication of a polydimethylsiloxane (PDMS) film having super-hydrophobic characteristics. Following UV exposure with a first photomask, the exposed part of the silicon wafer was selectively removed by applying a PR developer while rotating at a low rpm. Then, unique PR mold structures were prepared by employing an additional under-exposure process with a second mask, and the mold patterns were transferred to the PDMS. Results showed that the fabricated PDMS film based on the two-step lithography process reduced the height difference from 23% to 5%. In addition, the water contact angle was greatly improved by spraying of hydrophobic nanosilica on the dual-scaled PDMS surface.

Fabrication of Photoimageable Silver Paste for Low-Temperature Cofiring Using Acrylic Binder Polymers and Photosensitive Materials

  • Park, Seong-Dae;Yoo, Myong-Jae;Kang, Nam-Kee;Park, Jong-Chul;Lim, Jin-Kyu;Kim, Dong-Kook
    • Macromolecular Research
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    • v.12 no.4
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    • pp.391-398
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    • 2004
  • Thick-film photolithography is a new technology that combines lithography processes, such as exposure and development, with the conventional thick-film process applied to screen-printing. In this study, we developed a low-temperature cofireable silver paste applicable for thick-film processing to form fine lines using photolitho-graphic technologies. The optimum paste composition for forming fine lines was investigated. The effect of processing parameters, such as the exposing dose, had on the fine-line resolution was also investigated. As the result, we found that the type of polymer and monomer, the silver powder loading, and the amount of photoinitiator were the main factors affecting the resolution of the fine lines. The developed photoimageable silver paste was printed on a low-temperature cofireable green sheet, dried, exposed, developed in an aqueous process, laminated, and then fired. Our results demonstrate that thick-film fine lines having widths < 20 $\mu\textrm{m}$ can be obtained after cofiring.

Effects of Materials and Processing in Photosensitive Silver Pastes (감광성 실버 페이스트의 재료와 공정에 대한 영향)

  • Lee, Sang-Myoung;Park, Sung-Dae;Yoo, Myong-Jae;Lee, Woo-Sung;Nahm, Sahn
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.42-43
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    • 2006
  • LTCC 후막공정에서 일반적으로 사용되고 있는 스크린 프린팅 방법은 낮은 정밀도와 100um 이하의 선폭을 구현하는 데 한계를 보이고 있다. 이에 따라서 보다 미세한 라인을 형성 할 수 있는 반도체 미세라인 공정기술을 후막 공정에 응용한 후막 리소그라피 기술 (thick-film lithography technology)이 전자부품의 소형화에 대한 방안으로 연구 되고 있다. 본 연구에서는 후막 리소그라피 기술에 사용되는 감광성 Silver 페이스트에 영향을 미치는 각기 다른 크기와 형상의 Silver 파우더들과 인쇄 후 표면의 roughness 개선을 위한 여러 종류의 첨가제들을 첨가하여 최적의 조성을 연구 하였으며, 그린시트와 페이스트의 매칭성을 해결하기 위해서 Tg가 다른 글라스 파우더를 첨가하였다. 또한 전면 인쇄 한 후에 건조, 노광, 현상, 적층, 소성 과정을 걸치는 후막 리소그라피 기술을 이용하여 소성 후 20um이하의 선폭을 가지는 내장형 패턴 구현하였으며 투과엑스레이와 O/S 테스트 통하여 우수한 특성을 확인 할 수 있었다.

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Fabrication of High-T$_c$ Superconducting Josephson Junctions by Ar lon Milling and E-Beam Lithography (Ar 이온빔 식각과 전자선리소그래피 방벙으로 제작한 고온초전도 조셉슨 접합)

  • Lee, Moon-Chul;Kim, In-Seon;Lee, Jeong-O;Yoo, Kyung-Hwa;Park, Yong-Ki;Park, Jong-Chul
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.91-94
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    • 1999
  • A new type of high-T$_c$ superconducting Josephson junctions has been prepared by Ar ion beam etching and electron beam lithography. YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on (001) SrTiO$_3$ single crystal substrate by pulsed laser deposition were patterned by Ar ion milling with photolithography. The narrow slit with a electroresist mask, about 1000 ${\AA}$ wide, was constructed over a 3 ${\sim}$ 5 ${\mu}$m bridge of a 1200-${\AA}$-thick YBCO film by electron beam lithography. The slit was then etched by the Ar ion beam to form a damaged 600-${\AA}$-thick YBCO. Thus prepared structure forms an S-N-S (YBCO - damaged YBCO - YBCO) type Josephson junctions. Those junctions exhibit RSI-like I-V characteristics at 77 K. The properties of the Josephson junctions such as I$_c$ R$_N$, and J$_c$ were characterized.

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Fabrication of Ceramic-based Passive Mixers for Microfluidic Application by Thick Film Lithography (후막리소그라피를 이용한 세라믹기반의 미세유체소자용 수동형 혼합기의 제조)

  • Choi, Jae-Kyung;Yoon, Young-Joon;Lim, Jong-Woo;Kim, Hyo-Tae;Koo, Eun-Hae;Choi, Youn-Suk;Lee, Jong-Heun;Kim, Jong-Hee
    • Journal of the Korean Ceramic Society
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    • v.45 no.11
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    • pp.739-743
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    • 2008
  • Microfluidic device can be applied in a wide range of chemical and biological technology. In this paper, ceramic-based T-type passive mixers for microfluidic applications were fabricated by LTCC process combined with thick film photolithography. The base ceramic material in thick film was amorphous cordierite $((Mg,Ca)_2Al_4Si_5O_{18})$ and photoimageable polymers were added to give a photosensitivity. Two types of passive mixer, which showed the channel width of 1.0 mm and $200{\mu}m$, respectively, were designed considering mixing efficiency in the channel and their microfluidic properties were discussed in detail.

Formation of Fine Line and Series Gap Resonator Using the Photoimageable Thick Film Technology (후막 광식각 기술을 이용한 미세라인 및 Series Gap Resonator의 구현)

  • 박성대;이영신;조현민;이우성;박종철
    • Journal of the Microelectronics and Packaging Society
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    • v.8 no.3
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    • pp.69-75
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    • 2001
  • Photoimageable thick film technology is a new technology in that the lithography process such as exposure and development is applied to the conventional thick film process. Line resolution of 25 $\mu\textrm{m}$ width and 25 $\mu\textrm{m}$ space could be obtained by laminating green sheet, printing photoimageable Ag paste, exposing the test patterns, developing, and co-firing. In case of using the alumina substrate, 20 $\mu\textrm{m}$ fine line could be also obtained by similar process. Test results showed that exposing power density and developing time were the most important processing parameters for the fine line formation. Microstrip and series gap resonators with well-defined line morphology and good transmission characteristics in high frequency were formed by this new technology, and thereby dielectric constant and loss of test substrate were calculated.

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