• Korean Journal of Materials Research
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• v.28 no.4
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.121-124
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• 2012

The characteristics of Ga-doped zinc oxide (GZO) thin films deposited at different deposition temperatures (TS~250 to $550^{\circ}C$) on 4H-SiC have been investigated. Structural and electrical properties of GZO thin film on n-type 4H-SiC(0001) were investigated by using x-ray diffraction(XRD), atomic force microscopy(AFM), Hall effect measurement, barrier height from I-V curve and Auger electron spectroscopy(AES). XRD $2\theta$ scan shows GZO thin film has preferential orientation with c-axis perpendicular to SiC substrate surface. The lowest resistivity ($\sim1.9{\times}10^{-4}{\Omega}cm$) was observed for the GZO thin film deposited at $400^{\circ}C$. As deposition temperature increases, barrier height between GZO and SiC was increased. Whereas, resistivity of GZO thin films as well as barrier height between GZO and SiC were increased after annealing process in air atmosphere. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions and oxygen vacancy may affect the electrical properties of GZO films on SiC.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1328_1329
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• 2009

Nano porous indium tin oxide (ITO) powder was synthesized employing a new route sol-gel combustion hybrid method using Ketjen Black as a fuel. The nano porous ITO powder was composed of $SnCl_4$-98.0% and $In(NO_3)_3{\cdot}XH_2O$-99.999%, produce with a $NH_4OH$ with sol-gel method as a catalyst [1,2]. Crystal structures were examined by powder X-ray diffraction (XRD), and those results show shaper intensity peak at $25.6^{\circ}(2{\Theta})$ of $SnO_2$ by increased sintering temperature. A particle morphology as well as crystal size was investigated by scanning electron microscopy(FE-SEM), and the size of the nano porous powder was found to be in the range of 20~30nm. ITO films could controlled by nano porous powder at various sintering temperature in this paper[3,4]. The sol-gel combustion method was offered simple and effective route for the synthesis of nano porous ITO powder[5].

• Journal of the Korean Society for Heat Treatment
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• v.9 no.4
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• pp.252-260
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• 1996

A study was conducted to examine the precipitation phenomena of Al-2.1Li-2.9Cu alloy by differential scanning calorimetry and transmission electron microscopy. DSC curves were measured over the temperature range of $25{\sim}550^{\circ}C$ at a heating rate of $2{\sim}20^{\circ}C$/min.. Three heat evolution peaks and three heat absorption peaks were observed in the DSC curve for the as-quenched specimen. From DSC results and TEM analysis, it was proved that the precipitation sequence in the as-quenched specimen is supersaturated solid solution ${\rightarrow}$ GP zone ${\rightarrow}{\delta}^{\prime}{\rightarrow}T_1{\rightarrow}T_2$ and ${\theta}^{\prime}$ was detected in the peak aged specimen at $160^{\circ}C$. The major phase formed at peak hardeness in the aging at $160^{\circ}C$ was ${\delta}^{\prime}$ phase. The activation energies for the formation of ${\delta}^{\prime}$ and $T_1$ phases were 22.3kcal/mole and 24.3kcal/mole, respectively. These lower activation energies than those for diffusion of Cu and Li in Al are ascribed to the quenched-in excess vacancies.

• Journal of Adhesion and Interface
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• v.6 no.2
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• pp.1-5
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• 2005

Single crystals of metallocene-catalyzed isotactic polypropylene (iPP) and/or syndiotactic PP (sPP) were prepared and preliminarily characterized. The crystallization was performed utilizing 0.1 % by weight concentrations of each PP in o-xylene in the range of temperature of $40{\sim}90^{\circ}C$. Following the XRD patterns, samples were ${\alpha}$-iPP and antichiral Cell III of sPP. The XRD pattern of iPP shows three ${\alpha}$-form peaks due to the (110), (040), (130) planes at $2{\theta}=14.2^{\circ}$, $17^{\circ}$, $18.8^{\circ}$, respectively. The XRD pattern of sPP is characterized by the presence of the (020) reflection at $16^{\circ}$. The melting point ($123^{\circ}C$ and $148^{\circ}C$, respectively) of the metallocene catalyzed iPP and sPP were generally lower than that of conventional PP ($160{\sim}170^{\circ}C$) due to the misinsertion of the monomer. When metallocene-catalyzed iPP samples were crystallized isothermally from solution grown at a lower temperature, lozenge shape single crystals were observed by transmission electron microscopy (TEM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.953-957
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• 2002

Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; ｛CH$_{3}$｝$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.127-128
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• 2012

ZnO nanostructures were grown by the hydrothermal method on ZnO seed layers post-heated in the range $350-500^{\circ}C$. The effects of the post-heated ZnO seed layers on the structural and optical properties of the ZnO nanostructures were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) spectroscopy, and photoluminescence (PL) spectroscopy. The average grain sizes in the ZnO seed layers increased with increasing post-heating temperature, and nano-fibrous structures were observed on the surface of the ZnO seed layers post-heated at $450^{\circ}C$. The ZnO seed layers post-heated in the range $350-500^{\circ}C$ affected the residual stress, lattice distortion in the ZnO nanostructures and the intensity, positions, and full widths at half maximum of the 2-theta and PL peaks in the XRD and PL spectra for the ZnO nanostructures.

• Journal of Korea Foundry Society
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• v.31 no.4
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• pp.191-197
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• 2011

Transparent organic materials have been frequently used as an analog of the solidifying metallic materials, because their transparency permits an in-situ observation of the microstructural development during solidification through optical microscopy. Pivalic acid (PVA)-ethanol system showing an anisotropic property in solid-liquid interfacial energy and interface kinetics was adopted in the present experiment, and the detailed experiments performed are as follows: (1) variation of dendrite tip temperature with growth velocity, (2) correlation between primary dendrite arm spacing (${\lambda}_1$) and the growth orientation away from the heat flow direction (tilt angle: ${\theta}$), (3) variation of dendrite tip radius (R) with growth velocity (V), (4) dendrite tip stability parameter (${\sigma}^*$) and its dependence on the concentration. Concerning the correlation between the dendrite tip temperature and growth velocity the present result is well suited to Hunt-Lu equation. As the tilt angle increases, the average primary dendrite spacing tends to increase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.8-8
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• 2008

Two-dimensional photonic quasicrystal (PQCs) template patterns have been fabricated on a $1.1{\mu}m$-thick DMI-150 photoresist using a multiple-exposure holographic method. A 442-nm HeCd laser was utilized as a light source and the holographic exposure was carried out at a fixed angle of $\theta=6^{\circ}$. After the first holographic exposure, the sample was rotated to a proper angle and the second exposure was performed to the same manner. This exposure process was repeated n/2 times to obtain n-fold symmetric PQC patterns and then the sample was developed. The fabricated PQCs exhibited 8, 10 and 12-fold rotational symmetry and the diffraction patterns using a 632.8-nm HeNe laser were observed for n-rotation symmetry corresponding n-fold PQCs. The fabricated PQC template patterns were examined using scanning electron microscopy(SEM). Transmission spectra were measured fourier transform infrared(FTIR) spectrometer.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.