• Applied Microscopy
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• v.19 no.1
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• pp.89-108
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• 1989

알루미늄-4%동 계에서의 ${\theta}$ 및 ${\theta}'$ 석출물과 석출물/기지 계면 전위를 투과전자현미경상으로 관찰하고 콘트라스트 실험 및 석출물 분석으로 석출물/기지 계면의 정합성과 여러 전위들의 Burgers 벡타를 규명하였다. 실험 결과, 변형장은 정벽면에 수직으로 되어 있고, 판상의 ${\theta}'$ 석출물은 {100}형 정벽면을 지니고 있었다. ${\theta}'$판 주위의 전위는 정벽면에 수직인 Burgers 벡타를 지닌 칼날전위였다. 그리고, 석출물과 기지 사이의 접합변형을 작게하기 위한 계면전위의 Burgers 벡타는 a<100>과 a/2<100>형이었다. 또한 Hornbogen의 예견과 일치하는 사실로, ${\theta}'$의 석출물의 끝부분에서 ${\theta}$상이 핵생성을 하는 사실을 발견하였다.

• Applied Microscopy
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• v.43 no.3
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• pp.122-126
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• 2013

The heterogeneous nucleation of the ${\Theta}^{\prime}$ phase on nanoscale precipitates has been investigated using a combination of three-dimensional atom probe tomography and high-resolution transmission electron microscopy. Two types of ${\Theta}^{\prime}$ phases were observed, namely small (~2 nm thick) cylindrical precipitates and larger (~100 nm) globular precipitates and both appear to be heterogeneously nucleated on the nanoscale precipitates. The composition and crystal structure of precipitates were directly analyzed by combination of two advanced characterization techniques.

• Journal of the Optical Society of Korea
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• v.15 no.1
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• pp.9-14
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• 2011

In this study, the internal structure of an optical waveguide embedded in a flexible optical circuit board is observed with a confocal microscope. In order to increase the light reflection from an internal material interface with a very small index difference, and thus enhance the signal contrast, a theta microscopy scheme has been integrated into a conventional confocal microscope, and a high NA oil-immersion lens has been used. The interface reflectivity is increased from roughly 0.0015% to 0.025% by the proposed method, and the internal structure can thus be successfully measured.

• 한국전자현미경학회:학술대회논문집
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• 2005.05a
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• pp.145-146
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• 2005

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.37-42
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• 2000

The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.237-241
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• 2000

The effects of Si addition on the precipitation processes of in Al-Cu-Si alloy films were studied by the transmission electron microscopy. Deposition of an Al-1.5Cu-1.5Si (wt. %) film at $305^{\circ}C$ resulted in formation of fine, uniformly distributed spherical $\theta$-phase particles due to the precipitation of the $\theta$ and Si phase particles during deposition. For deposition at $435^{\circ}C$, fine $\theta$-phase particles precipitated during wafer cooldown, while coarse Si nodules formed at the sublayer interface during deposition. The film susceptibility to corrosion is discussed in relation to the film microstructure and deposition temperature.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.103-108
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• 2000

The texture of Al/Ti thin films deposited on low-dielectric polymer substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and SiO$_2$ by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and SiO$_2$ substrates was characterized by Transmission electron microscopy (TEM). hall thin films deposited on SiO$_2$ had stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM resealed that Brains of Ti films on SiO$_2$ substrates had grown perpendicular to the substrate, while the grains of Ti films on SiLK substrates were farmed randomly. The lower degree of 111 texture of Al thin films on low-k polymer was due to Ti underlayer.

• Journal of Microbiology and Biotechnology
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• v.19 no.4
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• pp.403-408
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• 2009

A number of bifidobacterial species of human origin were screened for the presence of cryptic plasmids. One strain, Bifidobacterium longum FI10564, harbored plasmids of approximately 2.2 kb, 3.6 kb, and 4.9 kb in size. The smallest plasmid, pFI2576(2,197 bp), was studied in detail and its complete nucleotide sequence was determined. Computer-assisted analysis of this novel plasmid(G+C content 62%) identified 9 putative open reading frames(orfs), 3 of which were shown to be probable genes. These putative genes are arranged in an operon-like structure, in which the overlapping orfs 1 and 2 encode putative Rep proteins and are highly homologous to the rep genes of the B. longum plasmid pMBI(1,847 bp). The mechanism of replication of pFI2576 was investigated using Southern blot analysis of whole cell lysates, with and without S1 nuclease treatment, and atomic force microscopy(AFM). The results indicate that pFI2576 is likely to use the theta mode of replication.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.170-170
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• 1999

We studied Nb growth mode on Cu(100) surface by scanning tunneling microscopy (STM) at room temperature. Nb/Cu is immiscible at room temperature and thus is an ideal system for studying surface alloy formation. Initially deposited Nb atoms are incorporated subsurface on Cu(100). After annealing, they are preferentially found at step edges and appear as bright dots surrounded by dark rings. Ordering emerges from step edges as annealed. Ordered ({{{{ SQRT { 5} }$\times${{{{ SQRT { 5} }}}})R 26.6$^{\circ}$phase Nb structure is formed at $\theta$<0.2ML after annealing to 50$0^{\circ}C$. At higher coverage, $\theta$>0.25, annealing leads to p(2$\times$2) phase. due to large mismatch in lattice parameters, the domain is limited to a few tens of nm2. Growth kinetics of the system will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.536-539
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• 2000

The effects of annealing on the electrical and structural characteristics for the rf sputter deposited WO$_3$thin film. The sputtered thin films are annealed at 773K for 1 hour in air atmosphere. Oxygen flow rate were changed from 0 to 70% during sputtering. It is observed from the results of the AFM measurement that the average roughness for the rf sputter deposited WO$_3$thin film would be increased from 2.45 angstrom to 152 angstrom by annealing. The sheet resistance of the sputtered WO$_3$film is changed from insulting to MOhm after annealing. According to the results of the XRD, the as-deposited films revealed the amorphous state whereas the peaks of X-ray diffraction at 2 theta= 28 degrees and 2 theta = 25 degrees corresponding to the (111) and (200) plane of the WO$_3$film respectively are observed after annealing.