• Journal of the Korean Society of Industry Convergence
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• v.22 no.2
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• pp.219-226
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• 2019

This paper describes the development of a 500W DC/DC converter for use with a thermoelectric module(TEM). A thermoelectric device is a structure in which a P-type semiconductor and an N-type semiconductor are electrically connected in series and thermally connected in parallel. There is a feature that an electromotive force is generated by making a temperature difference between both surfaces of a thermoelectric element. This feature can be used as a renewable power source without the need for fossil energy. The proposed converter boosts the low generation voltage of the thermoelectric element to secure the voltage for the grid connection. This converter is a combination of a resonant converter for boosting and a boost-converter for output voltage control. This structure has an advantage that a voltage can be stepped up at a high efficiency and precise output voltage control is possible. We carry out simulations and experiments to verify the validity.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.93-100
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• 2008

The one and two pair of oxide modules for high temperature thermoelectric power generation were fabricated with $Ca_{2.7}Bi_{0.3}Co_4O_9$(p-type) and $Ca_{0.96}Bi_{0.04}Mn_{0.96}Nb_{0.04}O_3$(n-type) on $Al_2O_3$ substrate. For the optimizing of the design process, contact resistance was derived from the results of the one pair modules, and then the resistance of two pair modules were calculated to use the derived data. Those values were compared with the measured values for the optimizing of this design process. The resistance of calculated and measured two pairs modules was 0.956 $\Omega$ and 1.110 Q $\Omega$ $T_h$=833 K, respectively, the difference of resistance was about 0.15 $\Omega$. From the result, proposed design process is effective for high temperature thermoelectric oxide modules fabrication.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.443-447
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• 2009

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_{2}Te_{3}$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $5{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_{2}Te_{3}$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_{2}Te_{3}$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ${\mu}m$ is obtained at the temperature difference of 45 K.

• Journal of Powder Materials
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• v.30 no.2
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• pp.130-139
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• 2023

Thermoelectric materials and devices are energy-harvesting devices that can effectively recycle waste heat into electricity. Thermoelectric power generation is widely used in factories, engines, and even in human bodies as they continuously generate heat. However, thermoelectric elements exhibit poor performance and low energy efficiency; research is being conducted to find new materials or improve the thermoelectric performance of existing materials, that is, by ensuring a high figure-of-merit (zT) value. For increasing zT, higher σ (electrical conductivity) and S (Seebeck coefficient) and a lower κ (thermal conductivity) are required. Here, interface engineering by atomic layer deposition (ALD) is used to increase zT of n-type BiTeSe (BTS) thermoelectric powders. ALD of the BTS powders is performed in a rotary-type ALD reactor, and 40 to 100 ALD cycles of ZnO thin films are conducted at 100℃. The physical and chemical properties and thermoelectric performance of the ALD-coated BTS powders and pellets are characterized. It is revealed that electrical conductivity and thermal conductivity are decoupled, and thus, zT of ALD-coated BTS pellets is increased by more than 60% compared to that of the uncoated BTS pellets. This result can be utilized in a novel method for improving the thermoelectric efficiency in materials processing.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.41 no.3
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• pp.199-204
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• 2017

We introduced a technology for reducing infrared radiation through the active cooling of hot surfaces by using a thermoelectric refrigerator. Certain surfaces were heated by aerodynamic heating, and the heat generation processes are proposed here. We calculated the temperatures and radiations from surfaces, while using thermoelectric refrigerators to cool the surfaces. The results showed that the contrast between the radiations of certain surfaces and the ambient environments can be removed using thermoelectric refrigerators.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.1
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• pp.1-12
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• 2010

An analysis model considered the manufacturing factors and the pellet size has been developed in order to predict the performance characteristics of thermoelectric modules as generators. Since the electrical internal resistance has a significant role in the performance of thermoelectric modules, the variations of electrical internal resistance with operating temperature are experimentally measured. The modified electrical internal resistance calculated from an experimental correlation is applied to the analysis model. To verify the modified analysis model, the output voltage, output current and output power are compared with experimental results for the operating temperature conditions of $T_h=85^{\circ}C$ and ${\Delta}T=40^{\circ}C$. The modified analysis shows a good agreement with the experimental results in terms of the output voltage, current, and power.

• Journal of Power Electronics
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• v.15 no.4
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• pp.899-909
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• 2015

A dual-input boost-buck converter with coupled inductors (DIBBC-CI) is proposed as a thermoelectric generator (TEG) power conditioner with a wide input voltage range. The DIBBC-CI is built by cascading two boost cells and a buck cell with shared inverse coupled filter inductors. Low current ripple on both sides of the TEG and the battery are achieved. Reduced size and power losses of the filter inductors are benefited from the DC magnetic flux cancellation in the inductor core, leading to high efficiency and high power density. The operational principle, impact of coupled inductors, and design considerations for the proposed converter are analyzed in detail. Distributed maximum power point tracking, battery charging, and output control are implemented using a competitive logic to ensure seamless switching among operational modes. Both the simulation and experimental results verify the feasibility of the proposed topology and control.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.1-6
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• 2008

Thermoelectric properties of calcium cobalt layer structure oxide system, $Ca_3Co_2O_6$ and $Ca_3Co_4O_9$ were investigated at the temperature range of 300 to 1000K for the application of thermoelectric generation. In the composition, the Ca site was partially substituted with Bi, Sr, La, K and the Co site was partially substituted with Mn, Fe, Ni, Cu, Zn. The thermoelectric properties of Bi substituted $Ca_3Co_4O_9$. $Ca_{2.7}Bi_{0.3}Co_4O_9$ for electrical conductivity, Seebeck coefficient and power factor were $85.4({\Omega}$cm)^{-l}, $176.2{\mu}V/K$ and $265.2{\mu}W/K^m$, respectively. The unit thermoelectric couple was fabricated with the p-type of $Ca_{2.7}Bi_{0.3}Co_4O_9$ and n-type ($Zn_{0.98}Al_{0.02}$)O thermoelectrics whose figure-of-merit(Z) were $0.87{\times}10^{-4}/K$ and $0.41{\times}10^4/K$, respectively. The generated thermoelectric power was about 30mV at the temperature difference of 120K in the unit thermoelectric couple.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.67-74
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• 2018

Thermoelectric thin film devices of the in-plane configuration consisting of 8 pairs of n-type $Bi_2Te_3$ and p-type $Sb_2Te_3$ legs were processed on Si submounts by electrodeposition. The thermoelectric generation characteristics of the thin film devices were investigated with respect to the apparent temperature difference ${\Delta}T$ caused by LED lighting as well as the change of the leg thickness. When ${\Delta}T$ was 7.4 K, the open circuit voltages of 6.1 mV, 7.4 mV, and 11.8 mV and the maximum output powers of 6.6 nW, 12.8 nW, and 41.9 nW were measured for the devices with the thermoelectric legs of which thickness were $2.5{\mu}m$, $5{\mu}m$, and $10{\mu}m$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.119-126
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• 2019

A flexible thermoelectric module, which consisted of 18 pairs of Bi₂Te₃-based hot-pressed p-n thermoelectric legs, were processed by filling the module inside with polydimethylsiloxane (PDMS) and removing the top and bottom substrates. Its power generation properties and bending characteristics were measured. With putting the flexible module on the wrist, an open circuit voltage of 2.23 mV and a maximum output power of 1.69 ㎼ were generated during staying still. On the other hand, an open circuit voltage of 3.32 mV and a maximum output power of 3.41 ㎼ were obtained with walking motion. The resistance variation of the module was kept below 1% even after applying 30,000 bending cycles with a bending curvature radius of 25 mm.