• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.61-67
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• 2017

As transistor density increases rapidly, a heat flux from IC device rises at fast rate. Thermal issues raised by high heat flux cause IC's performance and reliability problems. To solve these thermal management problems, the conventional cooling methods of IC devices were reached their thermal limit. As a result, alternative cooling methods such as liquid heat pipe, thermoelectric cooler, thermal Si via and etc. are currently emerging. In this paper microchannel liquid cooling system with TSV was investigated. The effects of 2 coolants (DI water and ethylene glycol 70 wt%) and 3 metal bumps (Ag, Cu, Cr/Au/Cu) on cooling performance were studied, and the total heat flux of various coolant and bump cases were compared. Surface temperature of liquid cooling system was measured by infrared microscopy, and liquid flowing through microchannel was observed by fluorescence microscope. In the case of ethylene glycol 70 wt% at $200^{\circ}C$ heating temperature, the total heat flux was $2.42W/cm^2$ and most of total heat flux was from liquid cooling effect.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.3
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• pp.13-19
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• 2021

This study examined the effects of stacking faults on the thermoelectric properties for n-type SiC semiconductors. Porous SiC semiconductors with 30~42 % porosity were fabricated by the heat treatment of pressed ��-SiC powder compacts at 1600~2100 ℃ for 20~120 min in an N2 atmosphere. XRD was performed to examine the stacking faults, lattice strain, and precise lattice parameters of the specimens. The porosity and surface area were analyzed, and SEM, TEM, and HRTEM were carried out to examine the microstructure. The electrical conductivity and the Seebeck coefficient were measured at 550~900 ℃ in an Ar atmosphere. The electrical conductivity increased with increasing heat treatment temperature and time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The Seebeck coefficients were negative due to nitrogen behaving as a donor, and their absolute values also increased with increasing heat treatment temperature and time. This might be due to a decrease in stacking fault density, i.e., a decrease in stacking fault density accompanied by grain growth and crystallite growth must have increased the phonon mean free path, enhancing the phonon-drag effect, leading to a larger Seebeck coefficient.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.3
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• pp.8-13
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• 2012

In this paper, we investigate cooperative spectrum sensing scheme for sensor network-aided cognitive radio systems with energy harvesting capability. In the proposed model, each sensor node harvests ambient energy from environment such as solar, wind, mechanical vibration, or thermoelectric effect. We propose adaptive cooperative spectrum sensing scheme in which each sensor node adaptively carries out energy detection depending on the residual energy in its energy storage and then conveys the sensing result to the fusion center. From simulation results, we show that the proposed scheme minimizes the false alarm probability for given target detection probability by adjusting the number of samples for energy detector.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.470.1-470.1
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• 2014

InAs는 high mobility를 갖는 III-V 화합물 반도체로 최근 InAs 나노선 기반 electronic transport에 대한 연구가 활발히 진행되고 있다. 또한, InAs는 n-type의 중온 영역대의 열전물질로서 나노선이나 나노박막과 같은 저 차원 구조의 열전 특성에 대한 보고가 이루어 지고 있다. 대부분의 InAs 나노선의 성장 방법은 화학기상증착법에 의한 것으로, 상온에서 $100{\mu}V/K$ 이하의 낮은 Seebeck 계수 값을 나타내고 있다. 본 연구는 무촉매 상태에서 MBE (Molecular beam epitaxy) 성장시킨 InAs 나노선의 열전 특성을 측정하였다. MTMP (Microfabricated Thermoelectric measurement platform)를 이용하여 50 K에서 300 K까지의 온도 영역에서 전기전도도, Seebeck 계수의 측정을 진행하였다. 그 결과 Seebeck 계수 값은 상온에서 대략 $200{\mu}V/K$로 높게 나타나고 있으며, 동일한 나노선의 상온 전기전도도는 대략 9800 S/m로 많은 보고들과 비슷한 수준의 수치가 나타나고 있다. Transconductance 측정을 통한 field-effect mobility와 carrier 농도를 평가한 결과가 Mott formula에서 계산된 carrier 농도와 유사한 결과를 나타내었다. 매우 큰 Seebeck 는 carrier 농도가 낮은 것에 기인한 것으로 판단된다.

• Journal of The Korean Society of Agricultural Engineers
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• v.57 no.6
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• pp.107-115
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• 2015

The objective of the this study is to find the breakage index and changes in permeability of Bottom ash from thermoelectric power plants in Korea. Bottom ash was crushed by compaction according to compaction energy from 0 to $1661.4\;kN/m^2$. The particle size distribution was estimated by sieve analysis. The various breakage indexes were used for analyzing the change in particle size distribution and effect of compaction energy. In the result, breakage indexes were increased as compaction energy and initial upper 4.75 mm diameter ratio, but values and tendencies of breakage indexes appeared in different as calculation method of breakage indexes. The coefficient of permeability was decreased with particle breakage, but decreasing ratio of permeability was very small. Bottom ash has a higher permeability than the weathered soil and it is considered high usability as a permeable materials.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.190-190
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• 2013

여러 화합물 반도체 중 $Sb_2Te_3$, $Bi_2Te_3$, 그리고 $Bi_2Se_3$과 같은 $A_2B_3$형 화합물은 열전소자에 적용가능성이 좋아서 광범위하게 연구되고 있다. $A_2B_3$형 화합물 중 특히 $Bi_2Te_3$는 단독 또는 다른 원소와 합금하여 태양전지, 열전소자, 그리고 상-변환 소자 등으로 이용된다. $Bi_2Te_3$ 박막을 형성하는 여러 방법 중에 전기화학적인 전착법은 박막의 조성 및 두께 제어가 용이하고 비용적 측면이나 형성속도 측면에서도 타 방법에 비하여 유리하기 때문에 주목을 많이 받고 있다. 하지만 전기화학적인 전착법에 의해 얻어진 박막은 점 결함, 높은 내부에너지와 결정성이 낮다는 단점이 있다. 본 연구에서는 도금층의 결정성 향상을 위하여 계면 활성제인 CTAB를 첨가하여 $Bi_2Te_3$ 박막을 형성하였다. $Bi_2Te_3$ 박막에 미치는 계면 활성제의 영향을 알아보기 위하여 결정성 및 전기, 열전 특성을 분석하였다. 또한, 도금된 박막을 다양한 온도에서 열처리 하여 열처리가 $Bi_2Te_3$ 박막의 전기 및 열전 특성에 미치는 영향을 알아보았다.

• Journal of Sensor Science and Technology
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• v.15 no.4
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• pp.269-276
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• 2006

This paper represents development of quartz crystal microbalance (QCM) and usage as a dew point sensor. The temperature of a quartz resonator was controlled precisely from $20^{\circ}C$ to $-30^{\circ}C$ with the ramping rate of $0.1^{\circ}C/s$ by using a custom-made crystal holder housing the quartz resonator associated with a thermoelectric cooler (Peltier cooler), which results in the working range from $15.2^{\circ}C$ to $-24.0^{\circ}C$ based on an accurate holder temperature compensation and temperature effect compensation process. The developed QCM dew point sensor and analysis techniques show very good sensing characteristics at measurement of moist air with the relative humidity from 10 %R.H. to 90 %R.H. generated by a divided-type humidity generator and the dew point temperatures were determined with an accuracy of less than ${\pm}0.18^{\circ}C$, which also showed good agreement with reference values in their error range.

• Bulletin of the Korean Chemical Society
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• v.10 no.5
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• pp.418-422
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• 1989

Cadmium-doped indium sesquioxide systems with a variety of CdO mol % were prepared to investigate the effect of doping on the electrical properties of indium sesquioxide. The electrical conductivities of pure $In_2O_3$ and Cd-doped $In_2O_3$ systems were measured in the temperature range from 25 to $1200^{\circ}C$ and $P_O_2$ range from $10^{-7}$ to $10^{-1}$ atm, and the thermoelectric power was measured in the same temperature range. The electrical conductivity and thermopower decreased with increasing CdO mol % indicating that all the samples are n-type semiconductors. The electrical conductivities of pure $In_2O_3$ and lightly doped $In_2O_3$ were considerably affected by the chemisorption $O_2$ at temperatures of 400 to $560^{\circ}C$ and then gaseous oxygen was reversibly chemisorbed at the temperature. The predominant defects in $In_2O_3$ are believed to be triply-charged interstitial indiums at temperatures above $560^{\circ}C$ and oxygen vacancies below $560^{\circ}C$. In Cd-doped $In_2O_3$ systems, cadmium acts as an electron acceptor and inhibits the transfer of lattice indium to interstitial sites, which give rise to the decrease of the electrical conductivity.

• Korean Journal of Metals and Materials
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• v.47 no.12
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• pp.860-865
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• 2009

The effect of Co additive on the electrical properties of Fe-Si alloys prepared by a RF inductive furnace was investigated. The electrical conductivity and Seebeck coefficient were measured as a function of the temperature under an Ar atmosphere to evaluate their applicability to thermoelectric energy conversion. The electrical conductivity of the specimens increased as the temperature increased, showing typical semiconducting behavior. The electrical conductivity of Co-doped specimens was higher than that of undoped specimens and increased slightly as the amount of Co additive increased. This is most likely due to the difference in the carrier concentration and the amount of residual metallic phase ${\varepsilon}$-FeSi (The ${\varepsilon}$-FeSi was detected in spite of an annealing treatment of 100 h at $830^{\circ}C$). Additionally, metallic conduction increased slightly as the amount of Co additive increased. On the other hand, Co-doped specimens showed a lower Seebeck coefficient due to the metallic phase. The power factor of Co-doped specimens was higher than that of undoped specimens. This would be affected more by the electrical conductivity compared to the Seebeck coefficient.

• Journal of the Korean Magnetics Society
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• v.26 no.2
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• pp.39-44
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• 2016

Determination of the structural, electronic, and magnetic properties of the magnetically doped bismuth-telluride alloys are drawing lots of interest in the fields of the thermoelectric application as well as the research on magnetic interaction and topological insulator. In this study, we performed the first-principles electronic structure calculations within the density functional theory for the Gd doped bismuth-tellurides in order to study its magnetic properties and magnetic phase stability. All-electron FLAPW (full-potential linearized augmented plane-wave) method is employed and the exchange correlation potentials of electrons are treated within the generalized gradient approximation. In order to describe the localized f-electrons of Gd properly, the Hubbard +U term and the spin-orbit coupling of the valence electrons are included in the second variational way. The results show that while the Gd bulk prefers a ferromagnetic phase, the total energy differences between the ferromagnetic and the antiferromagnetic phases of the Gd doped bismuth-telluride alloys are about ~1meV/Gd, indicating that the stable magnetic phase may be changed sensitively depending on the structural change such as defects or strains.