• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.328-332
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• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

• International Journal of Industrial Entomology and Biomaterials
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• 제25권2호
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• pp.159-162
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• 2012

The Chinese windmill butterfly, Atrophaneura alcinous, is an important butterfly for exhibition in butterfly garden. The objective of this study was to determine the effect of temperature on A. alcinous in the laboratory. Development of A. alcinous reared on leaves of Aristolochia contorta was investigated at five constant the laboratory condition (20, 22.5, 25, 27.5 and $30^{\circ}C$) and at relative humidity of 60% with a photoperiod of 14:10 (L:D). Temperatures have been suggested as an important determinant of developmental rate, lifespan and mortality in invertebrates. As the temperature increased, the length of the developmental period gradually decreased. The developmental time (pupation) from egg hatching to pupation was respectively 25.8, 23.6, 19.6, 15.5, and 12.9 days at the temperatures of 20, 22.5, 25, 27.5 and $30^{\circ}C$. And pupation was respectively 40.0, 30.0, 63.4, 50.0, 23.3% at the temperatures of 20, 22.5, 25, 27.5 and $30^{\circ}C$. The developmental threshold temperature estimated for egg-to-pupae was 10.8, with a thermal constant of 230.4 degree-days. Therefore, the optimal developmental temperature for A. alninous was determined to be $25^{\circ}C$. To compare the effects of the total duration of chilling on the termination of diapause, larvae were subjected to a temperature of $8^{\circ}C$ from 60 to 120 days. The rate of termination of diapause was significantly higher at 60 days compared to other incubation period.

• 한국패류학회지
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• 제27권4호
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• pp.387-393
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• 2011

The objective of this study was to develop a real-time PCR method for the rapid detection and quantification of the protozoan pathogen Perkinsus olseni using a TaqMan probe. For the standard, genomic DNA was extracted from $10^5$ in vitro-cultured P. olseni trophozoites, and then 10-fold serial dilutions to the level of a single cell were prepared. To test the reliability of the technique, triplicates of genomic DNA were extracted from $5{\times}10^4$ cells and 10-fold serial dilutions to the level of 5 cells were prepared. The standards and samples were analyzed in duplicate using an $Exicycler^{TM}$ 96 real-time quantitative thermal block. For quantification, the threshold cycle ($C_T$) values of samples were compared with those obtained from standard dilutions. There was a strong linear relationship between the $C_T$ value and the log concentration of cells in the standard ($r^2$ = 0.996). Detection of DNA at a concentration as low as the equivalent of a single cell showed that the assay was sensitive enough to detect a single cell of P. olseni. The estimated number of P. olseni cells was similar to the original cell concentrations, indicating the reliability of P. olseni quantification by real-time PCR. Accordingly, the designed primers and probe may be used for the rapid detection and quantification of P. olseni from clam tissue, environmental water, and sediment samples.

• Advances in environmental research
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• 제4권3호
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• pp.143-153
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• 2015

The ventilation system is a key device to ensure both healthful indoor air quality (IAQ) and thermal comfort in buildings. The ventilation system should make the IAQ meet the standards such as ASHRAE 62. This study deals with a new approach to modeling the ventilation and IAQ requirement in residential buildings. In that approach, Elite software is used to calculate the air supply volume, and CONTAM model as a multi-zone and contaminant dispersal model is employed to estimate the contaminants' concentrations. Amongst various contaminants existing in the residential buildings, two main contaminates of carbon dioxide ($CO_2$) and carbon monoxide (CO) were considered. CO and $CO_2$ are generated mainly from combustion sources such as gas cooking and heating oven. In addition to the mentioned sources, $CO_2$ is generated from occupants' respirations. To show how that approach works, a sample house with the area of $80m^2$ located in Tehran was considered as an illustrative case study. The results showed that $CO_2$ concentration in the winter was higher than the acceptable level. Therefore, the air change rate (ACH) of 4.2 was required to lower the $CO_2$ concentration below the air quality threshold in the living room, and in the bedrooms, the rate of ventilation volume should be 11.2 ACH.

• The Korean Journal of Physiology and Pharmacology
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• 제21권1호
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• pp.65-74
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• 2017

Here we investigated the central processing mechanisms of mechanical allodynia and found a direct excitatory link with low-threshold input to nociceptive neurons. Experiments were performed on male Sprague-Dawley rats weighing 230-280 g. Subcutaneous injection of interleukin 1 beta ($IL-1{\beta}$) ($1ng/10{\mu}L$) was used to produce mechanical allodynia and thermal hyperalgesia. Intracisternal administration of bicuculline, a gamma aminobutyric acid A ($GABA_A$) receptor antagonist, produced mechanical allodynia in the orofacial area under normal conditions. However, intracisternal administration of bicuculline (50 ng) produced a paradoxical anti-allodynic effect under inflammatory pain conditions. Pretreatment with resiniferatoxin (RTX), which depletes capsaicin receptor protein in primary afferent fibers, did not alter the paradoxical anti-allodynic effects produced by the intracisternal injection of bicuculline. Intracisternal injection of bumetanide, an Na-K-Cl cotransporter (NKCC 1) inhibitor, reversed the $IL-1{\beta}$-induced mechanical allodynia. In the control group, application of GABA ($100{\mu}M$) or muscimol ($3{\mu}M$) led to membrane hyperpolarization in gramicidin perforated current clamp mode. However, in some neurons, application of GABA or muscimol led to membrane depolarization in the $IL-1{\beta}$-treated rats. These results suggest that some large myelinated $A{\beta}$ fibers gain access to the nociceptive system and elicit pain sensation via $GABA_A$ receptors under inflammatory pain conditions.

• 대한전자공학회논문지SD
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• 제46권4호
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• pp.21-27
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• 2009

본 연구에서는 고온에서 Schottky barrier SOI nMOS 및 pMOS의 전류-전압 특성을 분석하기 위해서 Er 실리사이드를 갖는 SB-SOI nMOSFET와 Pt 실리사이드를 갖는 SB-SOI pMOSFET를 제작하였다. 게이트 전압에 따른 SB-SOI nMOS 및 pMOS의 주된 전류 전도 메카니즘을 온도에 따른 드레인 전류 측정 결과를 이용하여 설명하였다. 낮은 게이트 전압에서는 온도에 따라 열전자 방출 및 터널링 전류가 증가하므로 드레인 전류가 증가하고 높은 게이트 전압에서는 드리프트 전류가 감소하여 드레인 전류가 감소하였다. 고온에서 ON 전류가 증가하지만 드레인으로부터 채널영역으로의 터널링 전류 증가로 OFF 전류가 더 많이 증가하게 되므로 ON/OFF 전류비는 감소함을 알 수 있었다. 그리고 SOI 소자나 bulk MOSFET 소자에 비해 SB-SOI nMOS 및 pMOS의 온도에 따른 문턱전압 변화는 작았고 subthreshold swing은 증가하였다.

• 한국응용곤충학회지
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• 제45권3호
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• pp.381-383
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• 2006

멸종위기종인 꼬마잠자리의 부화율을 5개의 온도조건($10,\;15,\;20,\;25,\;30^{\circ}C$)에서 조사하였다. 꼬마잠자리의 알은 2006년 7월 경상북도 문경시 일대의 한 작은 습지에 서식하는 암컷 성충으로부터 채취하였다. 부화율은 100일 동안 부화한 유충의 수로부터 구하였다. 꼬마잠자리의 알은 20, 25 및 $30^{\circ}C$의 온도조건에서 각각 83, 89 및 76%가 부화하였으며, $10^{\circ}C$와 $15^{\circ}C$에서는 실험기간동안 부화하지 않았다. 꼬마잠자리 알의 부화 임계온도는 $14.3^{\circ}C$로 추정되었으며, 다른 온대성 잠자리류보다 상대적으로 높았다.

• The Korean Journal of Ecology
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• 제6권1호
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• pp.55-65
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• 1983

The authors reared the ash-gray leaf bug, Piesma maculata in the growth cabinet controlled as temperature groups of $15, 20, 25, 30, 40^{\circ}C$under condition of photoperiod 16L:8D, light intensity $510{\pm}240$ lus, relative humidity $65{\pm}3%$, and analyzed the effects of temperature on the development of the insect. The results are summarized as follow: There are highly significant differences the developmental periods for the temperature groups, and between the developmental periods for the developmental stages. The egg in the temperature of 15 and $40^{\circ}C$ was hatched, but the ecdysis was impossible. The thermal threshold was $12.34^{\circ}C$and the upper lethal temperature $40.39^{\circ}C$. The total developmental periods of egg to adulate in the temperature of 20, 25, 30 and $35^{\circ}C$are 40.52, 22.37, 15.91 and 13.00 days, respectively. That is, the developmental period was decreased, as the temperature was increased. In the developmental period for the developmental stages, the developmental period of egg stage was longer than that of 25, 30 and $35^{\circ}C$, and that of 25。C was longer than that of $35^{\circ}C$. But ther was not significant differences between the developmental periods for the other temperature group. The rate of hatch at$20^{\circ}C$is the greater value as 90%, and the rates of 25, 30 and $35^{\circ}C$ are 79, 79 and 67%, respectively. That is the rate of hatch was decreased, as the temperature was increased. The mortality in the temperature of $35^{\circ}C$ is the greatest value as 68%, and those of 30, 25 and $20^{\circ}C$are 59, 59 and 41%, respectively. That is, the mortality was increased, as the temperature was increased. There was not significantly differences between the developmental period of female and male.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.281-281
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• 2014

The field emission properties of GaN are reported in the present study. To be a good field emitter, it requires a low work function, high aspect ratio, and strong mechanical stability. In the case of GaN, it has a quite low work function (4.1eV) and strong chemical/mechanical/thermal stabilities. However, so far, it was difficult to fabricate vertical GaN nanostructures with a high aspect ratio. In this study, we successfully achieved vertically well aligned GaN nanostructures with chemical vapor-phase etching methods [1] (Fig. 1). In this method, we chemically etched the GaN film using hydrogen chloride and ammonia gases at high temperature around $900^{\circ}C$. This process effectively forms vertical nanostructures without patterning procedure. This favorable shape of GaN nanostructures for electron emitting results in excellent field emission properties such as a low turn-on field and long term stability. In addition, we observed a uniform fluorescence image from a phosphor film attached at the anode part. The turn-on field for the GaN nanostructures is found to be about $0.8V/{\mu}m$ at current density of $20{\mu}A$/cm^2. This value is even lower than that of typical carbon nanotubes ($1V/{\mu}m$). Moreover, threshold field is $1.8V/{\mu}m$ at current density of $1mA$/cm^2. The GaN nanostructures achieved a high current density within a small applied field range. We believe that our chemically etched vertical nanostructures are the promising structures for various field emitting devices.

• 대기
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• 제18권4호
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• pp.267-277
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• 2008

The occurrence and strength of the Asian Dust over the Korea Peninsular have been increased by the expansion of the desert area. For the continuous monitoring of the Asian Dust event, the geostationary satellites provide useful information by detecting the outbreak of the event as well as the long-range transportation of dust. The Infrared Optical Depth Index (IODI) derived from the MTSAT-1R data, indicating a quantitative index of the dust intensity, has been produced in real-time at Korea Meteorological Administration (KMA) since spring of 2007 for the forecast of Asian dust. The data processing algorithm for IODI consists of mainly two steps. The first step is to detect dust area by using brightness temperature difference between two thermal window channels which are influenced with different extinction coefficients by dust. Here we use dynamic threshold values based on the change of surface temperature. In the second step, the IODI is calculated using the ratio between current IR1 brightness temperature and the maximum brightness temperature of the last 10 days which we assume the clear sky. Validation with AOD retrieved from MODIS shows a good agreement over the ocean. Comparison of IODI with the ground based PM10 observation network in Korea shows distinct characteristics depending on the altitude of dust layer estimated from the Lidar data. In the case that the altitude of dust layer is relatively high, the intensity of IODI is larger than that of PM10. On the other hand, when the altitude of dust layer is lower, IODI seems to be relatively small comparing with PM10 measurement.