• Journal of the Korean Society of Hazard Mitigation
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• v.10 no.6
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• pp.59-64
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• 2010

Building a firebreak against surface forest fire is a typical indirect suppression method that stops spread of flame by removing surface fuel, such as fallen leaves and bushes. In the sense of fire dynamic, building a firebreak is to set a section which will block thermal energy from igniting on virgin fuel. This study suggests and evaluates a calculation method for width of firebreak against surface fire for variant wind and slope conditions by applying the Point Source Model (PSM) to fallen leaves of Pinus densiflora. Width of firebreak was measured based on the distance the threshold radiant heat igniting Pinus densiflora fallen leaves at the heat flux of $4.9\;kW/m^2$ reaches. As a result, at the wind velocity of 0~5 m/s and on the slope of $0{\sim}50^{\circ}$, the appropriate width of a firebreak was 0.35~0.65 m for the mean flame height and 0.75~1.05 m for the maximum flame height. Accordingly, considering the factor of safety, the most appropriate width of a firebreak is 1.05 m based on the maximum flame height. Additional comparative analyses through experiments and field surveys are deemed necessary to determine appropriate widths of firebreak for different types of surface fuel.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.18 no.4
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• pp.679-700
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• 1996

Inferior alveolar nerve dysfunction may be the result of trauma, disease, or iatrogenic injury. Inferior alveolar nerve injury is inherent risk in endodontic therapy, orthognathic surgery of the mandible, and extraction of mandibular teeth, particularly the third molars. The sensory disturbances of inferior alveolar nerve associated with such injury have been well documented clinical problem that is commonly evaluated by several clinical sensory test including Tinels sign, Von Frey test(static light touch detection), directional discrimination, two-point discrimination, pin pressure nociceptive discrimination, and thermal test. These methods used to detect and assess inferior alveolar nerve injury have been subjective in nature, relying on the cooperation of the patients. In addition, many of these techniques are sensitive to differences in the examiners experience and skill with the particular technique. Data obtained at different times or by different examiners are therefore difficult to compare. Prior experimental studies have used electro diagnostic methods(sensory evoked potential) to objectively evaluate inferior alveolar nerve after nerve injury. This study was designed with inferior alveolar nerve of rabbit. Several types of injury including mind, moderate, severe compression and perforation with 19 gauze, 21 gauze needle and 6mm, 10mm traction were applied for taking the sesory evoked ppterntial. Latency and amplitude of injury rabbit inferior alveolar nerve were investigated with sensory evoked potential using unpaired t-test. The results were as follows : 1. Intensity of threshold (T1) was $128{\pm}16{\mu}A$ : latency, $0.87{\pm}0.07$ microsecond : amplitude, $0.4{\pm}0.1{\mu}V$ : conduction velocity, 23.3 m/s in sensory evoked potential of uninjured rabbit inferior alveolar nerve. 2. Rabbit inferior alveolar nerve consists of type II and III sensory nerve fiber. 3. Latency was increased and amplitude was decreased in compression injury. The more injured, the more changed in latency and amplitude. 4. Findings in perforation injury was similar to compression injury. Waveform for sensory evoked potential improved by increasing postinjured time. 5. Increasing latency was prominent in traction injury rabbit inferior alveolar nerve. 6. In microscopic histopathological findings, significant degeneration and disorganization of the internal architecture were seen in nerve facicle of severe compression and 10mm traction group. From the above findings, electrophysiological assessment(sensory evoked potential) of rabbit injured inferior alveolar nerve is reliable technique in diagnosis and prognosis of nerve injury.

• Safety and Health at Work
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• v.2 no.3
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• pp.210-217
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• 2011

Objectives: The purpose of this study was to measure the concentration of volatile organic compound (VOC)s originated from the chemicals used and/or derived from the original parental chemicals in the photolithography processes of semiconductor manufacturing factories. Methods: A total of four photolithography processes in 4 Fabs at three different semiconductor manufacturing factories in Korea were selected for this study. This study investigated the types of chemicals used and generated during the photolithography process of each Fab, and the concentration levels of VOCs for each Fab. Results: A variety of organic compounds such as ketone, alcohol, and acetate compounds as well as aromatic compounds were used as solvents and developing agents in the processes. Also, the generation of by-products, such as toluene and phenol, was identified through a thermal decomposition experiment performed on a photoresist. The VOC concentration levels in the processes were lower than 5% of the threshold limit value (TLV)s. However, the air contaminated with chemical substances generated during the processes was re-circulated through the ventilation system, thereby affecting the airborne VOC concentrations in the photolithography processes. Conclusion: Tens of organic compounds were being used in the photolithography processes, though the types of chemical used varied with the factory. Also, by-products, such as aromatic compounds, could be generated during photoresist patterning by exposure to light. Although the airborne VOC concentrations resulting from the processes were lower than 5% of the TLVs, employees still could be exposed directly or indirectly to various types of VOCs.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.162-162
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• 1999

초고주파 집적회로의 핵심소자로 각광을 받고 있는 GaAs MESFET(MEtal-emiconductor)은 게이트 형성 공정이 가장 중요하며, WNx 내화금속을 이용한 planar 게이트 구조의 경우 임계전압(Vth:threshold voltage)의 균일도가 우수할 뿐만 아니라 특히 Side-wall을 이용한 self-align 게이트는 소오스 저항을 줄일 수 있어 고성능의 소자 제작을 가능하게 한다.(1) 본 연구의 핵심이 되는 Side-wall을 형성하기 위하여 PECVD법에 의한 SiOx 박막을 증착하고, 건식식각법을 이용하여 SiOx side-wall을 형성하였다. 이 공정을 이용하여 소오스 저항이 낮고 임계전압의 균일도가 우수한 고성능의 self-aligned gate MESFET을 제작하였다. 3inch GaAs 기판상에 이온주입법에 의한 채널 형성, d.c. 스퍼터링법에 의한 WNx 증착, PECVD법에 의한 SiOx 증착, MERIE(Magnetic Enhanced Reactive Ion Etcing)에 의한 Side-wall 형성, LDD(Lightly Doped Drain)와 N+ 이온주입, 그리고 RTA(Rapid Thermal Annealing)를 사용하여 활성화 공정을 수행하였다. 채널은 40keV, 4312/cm2로, LDD는 50keV, 8e12/cm2로 이온주입하였고, 4000A의 SiOx를 증착한 후 2500A의 Side-wall을 형성하였다. 옴익 접촉은 AuGe/Ni/Au 합금을 이용하였고, 소자의 최종 Passivation은 SiNx 박막을 이용하였다. 제작된 소자의 전기적 특성은 hp4145B parameter analyzer를 이용한 전압-전류 측정을 통하여 평가하였다. Side-wall 형성은 0.3$\mu\textrm{m}$ 이상의 패턴크기에서 수직으로 잘 형성되었고, 본 연궁에서는 게이트 길이가 0.5$\mu\textrm{m}$인 MESFET을 제작하였다. d.c. 특성 측정 결과 Vds=2.0V에서 임계전압은 -0.78V, 트랜스컨덕턴스는 354mS/mm, 그리고 포화전류는 171mA/mm로 평가되었다. 특히 본 연구에서 개발된 트랜지스터의 게이트 전압 변화에 따른 균일한 트랜스 컨덕턴스의 특성은 RF 소자로 사용할 때 마이크로 웨이브의 왜곡특성을 없애주기 때문에 균일한 신호의 전달을 가능하게 한다. 0.5$\mu\textrm{m}$$\times$100$\mu\textrm{m}$ 게이트 MESFET을 이용한 S-parameter 측정과 Curve fitting 으로부터 차단주파수 fT는 40GHz 이상으로 평가되었고, 특히 균일한 트랜스컨덕턴스의 경향과 함께 차단주파수 역시 게이트 바이어스, 즉 소오스-드레스인 전류의 변화에 따라 균일한 값을 보였다. 본 연구에서 개발된 Side-wall 공정은 게이트 길이가 0.3$\mu\textrm{m}$까지 작은 경우에도 사용가능하며, WNx self-align gate MEESFET은 낮은 소오스저항, 균일한 임계전압 특성, 그리고 높고 균일한 트랜스 컨덕턴스 특성으로 HHP(Hend-Held Phone) 및 PCS(Personal communication System)와 같은 이동 통신용 단말기의 MMICs(Monolithic Microwave Integrates Circuits)의 제작에 활용될 것으로 기대된다.

• International Journal of Industrial Entomology and Biomaterials
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• v.21 no.2
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• pp.180-183
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• 2010

This study was performed to investigate the temperature-dependent development, longevity and oviposition of an indigenous larval parasitoid, Meteorus pulchricornis, on tobacco cutworm, Spodoptera litura. M. pulchricornis were reared at nine constant temperatures between 15 and $35^{\circ}C$. The developmental times of each three developmental stage decreased from 38.7 to 16.3 d between 15 and $30^{\circ}C$. However, M. pulchricornis showed longer developmental time at $32.5^{\circ}C$ (9.5, 7.7 and 17.2 days for each three developmental stage) than at $30^{\circ}C$ (8.9, 7.3 and 16.3 days for each three developmental stage). Immature M. pulchricornis could not develop any more at $35^{\circ}C$. The lower developmental threshold estimated by linear regression equation for the egg to cocoon, cocoon to adult emergence and egg to adult emergence were 5.1, 4.6 and $4.5^{\circ}C$. The thermal constant for each of the three stages were 217.2, 176.2 and 403.8 degree-days, respectively. When no food or 50% honey solution as a food source is provided for M. pulchricornis, the parasitoid survived for 8.3 and 55.9 days at $25^{\circ}C$, respectively. M. pulchricornis females laid 5.2 eggs daily and total of 131.6 eggs at $25^{\circ}C$ until it died. Peak age-specific fecundity was observed on $14^{th}$ day (9.6 cocoons) after parasitoid emergence and gradually decreased thereafter.

• Journal of Forest and Environmental Science
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• v.13 no.1
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• pp.51-56
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• 1997

Developmental characteristics and reproductive ability of Caloglyphus sp. were examined under the constant temperature conditions. This mites has five stages ; egg, larva, protonymph, deutonymph and adult. All active instars preyed on larvae of pine gall midge, Thecodiplosis japonensis Uchida et Inouye. The developmental period from the egg to the adult decreased with temperature increase at a range between $15^{\circ}C$ and $30^{\circ}C$. The threshold of temperature and the thermal constant for the development from the egg to the adult were $8.2^{\circ}C$ and 122.0 day-degrees, respectively. At $25^{\circ}C$, survival rate from egg to deutonymph was estimated as 66.4%, and longevity of the adult was 12.3 days for male and 10.0 days for female. After a preoviposition period of 1 and 2 days female laid an average of 360.6 eggs each, almost all during the first half of their life time. The value of the net reproduction(Ro), the mean length of a generation(T) and the intrinsic rate of natural increase($r_m$) were calculated as 101.1, 9.3 days and 0.494 per female per day, respectively.

• Korean journal of applied entomology
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• v.35 no.2
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• pp.119-125
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• 1996

Temperature-dependent development study for overwintered eggs of Pseudococcus comstocki (Kuwana) wasconducted to develop a forecasting model for egg hatch date. Hatch times of overwintered eggs were comparedat five constant temperatures (10, 15, 20, 25, 27$^{\circ}$C) and different collection dates. A nonlinear, four-parameterdevelopmental model with high temperature inhibition accurately described (R2=0.9948) mean developmentalrates of all temperatures. Variation in developmental times was modeled(~~=0.972w9)it h a cumulative Weibullfunction. Least-squares linear regression (rate=O.O06358[Temp.]-0.07566)d escribed development in the linearregion (15-25$^{\circ}$C) of the development curve. The low development threshold temperature was estimated 11.9"Cand 154.14 degree-days were required for complete development. The linear degree-day model (thermal summation)and rate summation model (Wagner et al. 1985) were validated using field phenology data. In degreedaymodels, mean-minus-base method, sine wave method, and rectangle method were used in estimation of dailythermal units. Mean-minus-base method was 18 to 28d late, sine wave method was 11 to 14d late, rectanglemethod was 3 to 5d late, and rate summation model was 2 to 3d late in predicting 50% hatch of overwinteredeggs. hatch of overwintered eggs.

• Korean journal of applied entomology
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• v.44 no.3 s.140
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• pp.225-230
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• 2005

This study was conducted to investigate the developmental characteristics of cabbage armyworm, Mamestra brassicae L. (Lepidoptera: Noctuidae) by different temperatures and its seasonal occurrence in pepper field. Under four constant temperatures, 15, 20, 22 and $25^{\circ}C$, developmental periods from egg to adult were 88.3, 63.0, 52.3, and 42.8 days, respectively, with egg periods being 9.2, 6.2, 5.0 and 3.9 days, and larval periods being 40.5, 30.1, 23.3 and 21.2 days, respectively. Developmental threshold and thermal requirement in degree-days (DD) were $7.9^{\circ}C$ and 69.4 DD for egg, $4.8^{\circ}C$ and 434.8 DD for larva and $6.7^{\circ}C$ and 344.8 DD for pupa. Fecundity of female increased as temperature increased laying 1262.1 eggs at $15^{\circ}C$, 1663.8 eggs at $20^{\circ}C$ and 1763.2 eggs at $25^{\circ}C$. Mean numbers of eggs per egg-mass were 99.4, 114.7 and 167.9 under the three constant temperatures, respectively. In Daegwallyeong highland area, this noctuid occurred from mid June to late August and has two generations a year reaching peak two times, one at late June and the other at early August.

• Journal of IKEEE
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• v.20 no.3
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• pp.220-225
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• 2016

In this paer, low on-resistance and high-power trench gate MOSFET (Metal-Oxide-Silicon Field Effect Transistor) incorporating current sensing FET (Field Effect Transistor) is proposed and evaluated. The trench gate power MOSFET was fabricated with $0.6{\mu}m$ trench width and $3.0{\mu}m$ cell pitch. Compared with the main switching MOSFET, the on-chip current sensing FET has the same device structure and geometry. In order to improve cell density and device reliability, self-aligned trench etching and hydrogen annealing techniques were performed. Moreover, maintaining low threshold voltage and simultaneously improving gate oxide relialility, the stacked gate oxide structure combining thermal and CVD (chemical vapor deposition) oxides was adopted. The on-resistance and breakdown voltage of the high density trench gate device were evaluated $24m{\Omega}$ and 100 V, respectively. The measured current sensing ratio and it's variation depending on the gate voltage were approximately 70:1 and less than 5.6 %.