• Polymer(Korea)
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• v.26 no.4
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• pp.431-438
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• 2002

We studied the orientation behavior and thermal stability of polyimide (PI) molecules under irradiation of polarized UV (PUV) using polarized fourier transform infrared (FTIR) spectroscopy. In the case of PUV-exposed PI films, the remaining PI molecules after photo-degradation showed molecular orientation perpendicular to the irradiated PUV polarization direction predominantly, due to the preferential degradation of PI molecules parallel to the irradiated PUV Polarization direction. On the other hand, the rubbing of PI films induced reorientation of the PI molecules parallel to the rubbing direction. We also investigated the thermal stability of the alignment layers furled by rubbing and PUV irradiation on the PI films using Polarized FTIR. The thermal stability of the PUV irradiated PI alignment layer is lower than that of the rubbed PI layer due to the fragmentation reaction of the PI by PUV.

• Journal of Powder Materials
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• v.12 no.1
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• pp.43-50
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• 2005

Mechanical alloying using high-energy ball mill and subsequent spark plasma sintering (SPS) process was applied to Al-Fe-Cr and Al-Fe-Mo powder mixture to investigate effects of Cr and Mo addition on thermal stability of Al-Fe, and thereby to enhance its thermal stability up to $500^{\circC}$. Various analytical techniques including micro-Vickers hardness test, SEM, TEM, X-ray diffractometry and corrosion test were carried out. It was found that addition of Cr and Mo to Al-Fe system played a role of grain growth inhibitor of matrix Al and some precipitates such as $Al_3Fe$ during SPS and subsequent heat treatment. The inhibition of grain growth resulted in increased Vickers hardness and thermal stability up to $500^{\circC}$ comparing to those of Al-Fe alloy system.

• Journal of Powder Materials
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• v.12 no.1
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• pp.70-78
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• 2005

Mechanical alloying using high-energy ball mill and subsequent spark plasma sintering (SPS) process was applied to understand mechanical alloying processing of Al-Fe alloy system. The thermal stability of mechanically alloyed Al-Fe alloy was intended to be enhanced by SPS process. Various analytical techniques including particle size analysis, density measurement, micro-Vickers hardness test, SEM, TEM, and X-ray diffractometry were adopted to find optimum processing conditions for mechanical alloying and subsequent SPS and to estimate thermal stability of the prepared alloy. It was found from the treatment of mechanically alloyed Al-8wt.%Fe powder mixture that needle-shaped $Al_3Fe$ precipitates was formed in the Al-Fe matrix, and the alloy compact showed enhanced densification and reached its full density with little loss of its fine microstructure. After heat treatment at $500^{\circC}$, it was also shown that the thermal stability of Al-8wt.%Fe alloy fabricated in the present study was enhanced, which was due to its fine microstructure developed by fast densification of SPS.

• Carbon letters
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• v.9 no.3
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• pp.200-202
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• 2008

In order to improve the thermal stability of PAN-based electrospun fibers, AP-PER-MEL and $TiO_2$ were added in to the fibers as additives. The polymer composite with uniformly mixed additional agents was obtained. In case of non-treated sample, the fibers were burn off completely with high rate within $620^{\circ}C$. But in case of treated samples (EF-M and EF-MT), it is sure that the thermal stability was improved by studying TGA data and ISO flammability test about 20 and 30%, respectively. A synergy effect of adding two kinds of agents (AP-PER-MEL and $TiO_2$) into PAN-based electrospun fibers was confirmed. Through SEM images, it is confirmed that the fiber shape can be kept even after addition of agents (AP-PER-MEL and $TiO_2$). Finally the thermal stability of fibers was largely developed with keeping the nature of PAN-based fibers effectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1091-1098
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• 1998

Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.365-369
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• 2016

In this paper, we fabricated Cu/Mn alloy shunt resistor with low resistance and thermal stability for use of mobile electronic devices. We designed metal alloy composed of copper (Cu) and manganese (Mn) to embody in low resistance and low TCR which are conflict each other. Cu allows high electrical conductivity and Mn serves thermal stability in this Cu/Mn alloy system. We confirmed the elemental composition of the designed metal alloy system by using energy dispersive X-ray (EDX) analysis. We obtained low resistance below $10m{\Omega}$ and low temperature coefficient of resistance (TCR) below $100ppm/^{\circ}C$ from the designed Cu/Mn alloy resistor. And in order to minimize resistance change caused by alternative frequency on circuit, shape design of the metal alloy wire is performed by rolling process. Finally, we conclude that design of the metal alloy system was successfully done by alloying Cu and 3 wt% of Mn, and the Cu/Mn alloy resistor has low resistance and thermal stability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1149-1155
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• 2004

In this paper, novel methods for improvement of thermal stability of Ni-germano Silicide were proposed for nano CMOS applications. It was shown that there happened agglomeration and abnormal oxidation in case of Ni-germano Silicide using Ni only structure. Therefore, 4 kinds of tri-layer structure, such as, Ti/Ni/TiN, Ni/Ti/TiN, Co/Ni/TiN and Ni/Co/TiN were proposed utilizing Co and Ti interlayer to improve thermal stability of Ni-germano Silicide. Ti/Ni/TiN structure showed the best improvement of thermal stability and suppression of abnormal oxidation although all kinds of structures showed improvement of sheet resistance. That is, Ti/Ni/TiN structure showed only 11 ohm/sq. in spite of 600 $^{\circ}C$, 30 min post silicidation annealing while Ni-only structure show 42 ohm/sq. Therefore, Ti/Ni/TiN structure is highly promising for nano-scale CMOS technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.215-218
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• 1998

The thermal stability of polyaniline-camphorsulfonic acid(PANI-CSA) film was studied as a function of temperature and time. A decrease in electrical conductivity of PANI-CSA film occurred when PANI-CSA film is subjected to temperature above 60$^{\circ}C$. From the result of thermogravimetry (TG), it was thought that the deterioration in electrical conductivity of PANI-CSA film was due to evaporation of water and residual solvent.

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.179-182
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• 2001

Photocyclizable poly(cinnam-4'-yl methyl methacrylate) derivatives bearing methoxy benzene (PMCMMA), anthracene (PACMMA), and coumarin (PCCMMA) have been synthesized via Heck type reaction. Three different types of polymers are photoreactable usin g linearly polarized UV light and applicable as liquid crystal alignment layer. Anthracence and coumarin containing polymers (PACMMA, PCCMMA) have better thermal stability than PMCMMA. This observation may be attributed to the glass transition temperature elevation due to the bulky size and another photocrosslinking site provided by anthracene or coumarin group.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.699-700
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• 2013

Aluminum and hydrogen doped zinc oxide (AZHO) films were prepared by r.f. magnetron sputtering. The structural, electrical, and optical properties of the AHZO films were investigated in terms of the annealing conditions to study the thermal stability. The XRD measurements revealed that the degree of c-axis orientation was decreased and the crystallintiy of the films was deteriorated by the heat treatment. The electrical resistivity was significantly increased when the films were annealed at higher temperature. Although the optical transmittance of AHZO films didn't highly changed by heat treatment, the optical band gap was reduced, regardless of annealing temperature and duration. The thermal stability of AHZO films was worse compared to AZO films.