• 설비공학논문집
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• 제14권1호
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• pp.1-9
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• 2002

The thermal response of electronic components during infrared reflow soldering is studied by a two-dimensional numerical model. The convective, radiative and conduction heat transfer within the reflow oven as well as within the card assembly are simulated. Parametric study is also performed to determine the thermal response of electronic components to various conditions such as conveyor velocities, exhaust velocities and emissivities. The results of this study can be used in selecting the oven operating conditions to ensure proper solder melting and minimization of thermally induced card assembly stresses.

• Journal of Welding and Joining
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• 제21권6호
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• pp.46-54
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• 2003

The thermal response of electronic assemblies during forced convection-infrared reflow soldering is studied. Soldering for attaching electronic components to printed circuit boards is performed in a process oven that is equipped with porous panel heaters, through which air is injected in order to dampen temperature fluctuations in the oven which can be established by thermal buoyancy forces. Forced convection-infrared reflow soldering process with air injection is simulated using a 2-dimensional numerical model. The multimode heat transfer within the reflow oven as well as within the electronic assembly is simulated. Parametric study is also performed to study the effects of various conditions such as conveyor speed, blowing velocity, and electronic assembly emissivity on the thermal response of electronic assemblies. The results of this study can be used in the process oven design and selecting the oven operating conditions to ensure proper solder melting and solidification.

• Journal of Welding and Joining
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• 제15권6호
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• pp.105-115
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• 1997

A numerical study is performed to predict the thermal response of a detailed card assembly during infrared reflow soldering. The card assembly is exposed to discontinuous infrared panel heater temperature distributions and high radiative/convective heating and cooling rates at the inlet and exit of the oven. The convective, radiative and conduction heat transfer within the reflow oven as well as within the card assembly are simulated and the predictions illustrate the detailed thermal responses. The predictions show that mixed convection plays an important role with relatively high frequency effects attributed to buoyancy forces, however the thermal response of the card assembly is dominated by radiation. The predictions of the detailed card assembly thermal response can be used to select the oven operating conditions to ensure proper solder melting and minimization of thermally induced card assembly tresses and warpage.

• 전기학회논문지
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• 제58권6호
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• pp.1100-1104
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• 2009

As national power consumption every year increases, the power plant which is in the process of planning tries to establish high-capacity generator. The power system tends to become a large size. With the progress of electronic components, the control systems of the generator have been digitalized and rapid-response control system is possible. However, the minute frequency vibration of grid occurred with the effect of rapid-response control system. To solve these problem, PPS(Power System Stability) has been introduced since 2004, and it has being installed and applied to the thermal and nuclear power plant which are high-capacity, over 800MVA. However the minute frequency vibration is gradually changed to the bigger frequency vibration by fast-action control system, and this regional frequency fluctuation might be diffused wide area. Therefore, it is applied to the hydro generator which is small with fast-action governor system, and it is necessary to control the minute frequency vibration to prevent to diffuse. In this paper, the effect will be proved by establishing PSS on the Hydro-Generator which has both digital excitation and governor system for the first time in Korea.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.142.2-142.2
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• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.