• 제목/요약/키워드: Thermal profile

검색결과 472건 처리시간 0.027초

EMP simulation을 활용한 다층 박막의 평가 및 설계 (Evaluation and design of Multi-layered thin films with EMP simulation)

  • 김준식;장건익
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.312-312
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    • 2009
  • 본 연구에서는 Thermal evaporator(저항 가열 식 진공 증착법) 장비를 활용하여 ZnS/$Na_3AlF_6$/ZnS/Cu-$0.25\lambda$, ZnS/$CaF_2$/ZnS/Cu-$0.25\lambda$의 다층 박막을 glass 기판위에 증착하였다. 증착 전에 EMP(Essential Macleod Program)을 활용하여 광학적 특성을 simulation하였으며 다층 박막 제작 후 Spectrophotometer를 사용하여 반사율 및 색상을 CIE $L^*a^*b^*$ 좌표에 표시하여 고 굴절 물질에 따른 광학적 특성을 EMP simulation과 비교하였다. AES depth profile을 분석하여 막의 두께 및 층간 확산여부에 관하여 관측 하였다. 저굴절 물질을 Na3AlF6로 사용하였을 경우 simulation과 결과 값 모en purple 계통의 색상을 나타냈으며 CaF2를 사용하였을 경우 simulation은 purple 계통의 색상, 결과값은 red-yellow 계통의 색상으로 나타났다.

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$CoSi_2$ 전극 구조의 증착법에 따른 특성 변화 연구 (Study on Property Variations of $CoSi_2$ Electrode with Its Preparation Methods)

  • 남형진
    • 반도체디스플레이기술학회지
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    • 제6권4호
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    • pp.5-9
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    • 2007
  • Phase transition and dopant redistribution during silicidation of $CoSi_2$ thin films were characterized depending on their preparation methods. Our results indicated that cleanness of the substrate surface played an important role in the formation of the final phase. This effect was found to be reduced by addition of W resulting in the formation of $CoSi_2$. However, even in this case, the formation of the final phase was achieved at the cost of extra thermal energy, which induced rough interface between the substrate and the silicide film. As for the dopant redistribution, the deposition sequence of Co and Si on SiGe was observed to induce significant differences in the dopant profiles. It was found that co-deposition of Co and Si resulted in the least redistribution of dopants thus maintaining the original dopant profile.

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유리섬유 강화 후판 복합재료의 경화공정 해석 (Cure simulation for a thick glass/epoxy laminate)

  • 오제훈;이대길
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2000년도 춘계학술발표대회 논문집
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    • pp.53-58
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    • 2000
  • During the curing process of thick glass/epoxy laminates, a substantial amount of temperature lag and overshoot at the center of the laminates is usually experienced due to the large thickness and low thermal conductivity of the glass/epoxy composites. Also, it requires a longer time for full and uniform consolidation. In this work, temperature, degree of cure and consolidation of a 20mm thick unidirectional glass/epoxy laminate were investigated using an experiment and a 3-dimentional numerical analysis considering the exothermic reaction. From the experimental and numerical results, it was found that the experimentally obtained temperature profile agreed well with the numerical one and the cure cycle recommended by the prepreg manufacturer should be modified to prevent a temperature overshoot and to obtain full consolidation.

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생체흡수성 HA/PLLA 복합재료의 용융혼련조건이 파괴특성에 미치는 영향 (Effect of Melt-mixing Conditions on Fracture Properties of Bioabsorbable HA/PLLA Composite Materials)

  • 박상대;이덕보
    • 대한기계학회논문집A
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    • 제31권7호
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    • pp.732-738
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    • 2007
  • Effects of melt-mixing conditions on fracture properties of hydroxyapatite filled bioabsorbable poly(L-lactic acid)(HA/PLLA) composites was investigated by measuring the firacture toughness value of HA/PLLA composites prepared under different mixing time and rotor speed. The fracture surface morphology was also examined by profile measurement and scanning electron microscopies. It was found that the fracture toughness of HA/PLLA composites decreases due to decrease of ductile deformation of PLLA matrix and debonding of interfaces with increase of the rotor speed and mixing time. Effect of mixing process on neat PLLA was also assessed, and it was found that the fracture toughness of PLLA decreases due to disappearance of multiple craze formation and increase of defects. Such thermal and shear-stress degradation were found to be the primary mechanisms of the degradation of HA/PLLA composites during melt-mixing process.

구조에 따른 상변화 소자의 전자장 및 열 해석 (Electromagnetic and Thermal Analysis of Phase Change Device with Structure Charge)

  • 임영진;장낙원;이성환;이동영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.37-39
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    • 2006
  • 본 연구에서는 상변화소자의 구조 변화에 따른 열전달 현상과 reset 전류에 대한 시뮬레이션을 실행하였다. 상변화소자의 상변화재료의 profile에 따른 주울열의 발생 및 reset 전류의 변화량을 시뮬레이션 한 결과, 하부전극에서부터 도포되는 상변화재료 박막의 두께가 2000[A]인 경우는 541($^{\circ}C$)로 현저하게 발열온도가 낮아지는 것을 알 수 있다. 이는 저항체로 쓰이는 상변화재료의 저항 감소로 인해 발열량이 적게 되고 상변화재료를 통해 전달된 열이 상부전극 텅스텐과 접촉하면서 외부로 쉽게 전달되면서 빠져나감에 따라 온도가 많이 올라가지 않는 것으로 생각된다.

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분할된 ALE 방법에 의한 평금형 열간압출의 3차원 유한요소해석 (Three-dimensional finite element analysis of hot square die extrusion by using split ALE method)

  • 강연식;양동열
    • 대한기계학회논문집A
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    • 제21권11호
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    • pp.1912-1920
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    • 1997
  • In the analysis of metal forming process, ALE(Arbitrary Lagrangian Eulerian) finite element methods have been increasingly used for the capability to control mesh independently from material flow. The methods can be divided into two groups i.e., coupled and split formulations. In the present work, the split ALE formulation is used for computational efficiency. A split ALE finite element method developed for rigid-viscoplastic materials and applied to the analysis of hot square die extrusion. Since thermal state greatly affects the product quality, an ALE scheme for temperature analysis is also presented. As computational examples, profile shapes as square and cross-like sections are chosen.

백금 촉매에 의해 안정화된 메탄의 연소 특성 (Catalytically Stabilized Combustion Characteristics of Methane on Platinum Catalyst)

  • 황철홍;정영식;이창언
    • 한국연소학회:학술대회논문집
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    • 한국연소학회 2000년도 제20회 KOSCO SYMPOSIUM 논문집
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    • pp.152-161
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    • 2000
  • The catalytically stabilized combustion of $CH_4$-air mixture on platinum catalyst was investigated numerically using a 2-D boundary layer model with detailed heterogeneous and homogeneous chemistries. The actual surface site density of monolith coated with platinum was decided by the comparison with experimental data. The comparisons were made between results for cases where only heterogeneous chemistry was allowed and both heterogeneous and homogeneous chemistries were allowed. It was found that the homogeneous reaction in the monolith had little effect on the change of temperature profile, methane conversion rate and light off location. The contributions of each reactions related with CO formation were discussed on the surface. The effects of operation conditions such as equivalence ratio, temperature, velocity and pressure at the entrance were studied. In thermal combustor, CO and NOx was produced less than 1 ppm at the exit and the production of $N_{2}O$ was more dominant than that of NO.

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하부전극에 따른 상변화 메모리 셀의 전기 및 발열 특성 (The Electrical and Thermal Properties of Phase Change Memory Cell with Bottom Electrode)

  • 장낙원;김홍승;이준기;김도형;마석범
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.103-104
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    • 2006
  • PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the reset current and temperature profile of PRAM cells with bottom electrode were calculated by the numerical method.

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이산화실리콘 층의 예각부식 (Acute Angle Etching of silicon Dioxide Layer)

  • 최연익
    • 대한전자공학회논문지
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    • 제22권4호
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    • pp.84-91
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    • 1985
  • 열적으로 성장된 이산화실리콘 층 위에 실리카 필름 박막을 도포함으로써, 열산화막의 예각부식 공정이 제안되었다. 실리카필름의 밀화온도를 175$^{\circ}C$ 에서 1,150$^{\circ}C$로 변화시킴에 따라, $3^{\circ}$ 에서 $40^{\circ}$사이의 경사각을 얻었다. 또한 예각부식 공정의 해석적인 모형이 제시되었으며, 이산화실리콘 층의 부식단면을 기술하는 방정식이 Fermat의 최단시간 정리를 이용하여 유도되었다. 전자주사 현미경으로 부터 얻어진 부식단면과 이론적으로 계산된 단면을 비교한 결과, 서로 잘 부합되었다.

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CMOS소자를 위한 Ni Silicide의 Dopant에 따른 영향분석 (Analysis of Dopant Effects in Ni-Silicide for CMOS Technology)

  • 배미숙;지희환;이헌진;안순의;박성형;이기민;이주형;왕진석;이희덕
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.241-244
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    • 2002
  • The dependence of NiSi properties such as sheet resistance and cross-sectional profile on the dopants was characterized. There was little difference of sheet resistance between various dopants such as As, p, BF2 and B just after R'n formation of NiSi. However, the NiSi properties showed strong dependence on the dopants when thermal treatment was applied after RTf formation. BFa .implanted silicon was the best stable property while As implanted one was the worst. The main reason of the excellence property of BF2 sample is believed to be the retardation of Ni diffusion by the F. Therefore, retardation of Ni diffusion is very desirable fur high performance NiSi technology.

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