• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.5 s.236
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• pp.617-624
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• 2005

An analysis of the effects of $CO_{2}$ on fundamental combustion characteristics was performed in Oxygen enriched condition by comparing the laminar burning velocities, flame structures, fuel oxidation paths. Fictitious $CO_{2}$ was introduced to discriminate the chemical reaction effects of $CO_{2}$ from the thermal effects. PREMIX code was utilized to evaluate the laminar burning velocities. OPPDIF code was utilized to investigate the flame structure and fuel oxidation path variation. The contributions of thermal effects on laminar burning velocities are dominant at lowly oxygen-enriched condition but those of chemical reaction effects become dominant at highly oxygen-enriched condition. Chemical reaction effects caused the additional flame temperature decrease besides thermal effects and oxygen-leakage increase in non-premixed flame. Specific fuel oxidation path and CO production path is enhanced in spite of overall decrement of fuel consumption rate by chemical reaction effects of$CO_{2}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1149-1155
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• 2004

In this paper, novel methods for improvement of thermal stability of Ni-germano Silicide were proposed for nano CMOS applications. It was shown that there happened agglomeration and abnormal oxidation in case of Ni-germano Silicide using Ni only structure. Therefore, 4 kinds of tri-layer structure, such as, Ti/Ni/TiN, Ni/Ti/TiN, Co/Ni/TiN and Ni/Co/TiN were proposed utilizing Co and Ti interlayer to improve thermal stability of Ni-germano Silicide. Ti/Ni/TiN structure showed the best improvement of thermal stability and suppression of abnormal oxidation although all kinds of structures showed improvement of sheet resistance. That is, Ti/Ni/TiN structure showed only 11 ohm/sq. in spite of 600 $^{\circ}C$, 30 min post silicidation annealing while Ni-only structure show 42 ohm/sq. Therefore, Ti/Ni/TiN structure is highly promising for nano-scale CMOS technology.

• 한국연소학회:학술대회논문집
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• 2004.11a
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• pp.225-230
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• 2004

Volatile organic compounds (VOCs) are low calorific value gases (LCVG) emitted from chemical processes such as painting booth, dye works and drying processes etc. Characteristics of VOCs are low calorific values less than 150 kcal/$m^3$, high activation energy for ignition and low energy output. These characteristics usually make combustion unstable and its treatment processes needs high-energy consumption, The cyclone combustion system is suitable for LCVG burning because it can recirculate energy through a high swirling flow to supply the activation energy for ignition, increases energy density to make a combustion temperature higher than usual swirl combustor and also increases mixing intensity, This research was conducted to develop optimized cyclone combustion system for thermal oxidation of VOCs. This research was executed to establish the effect of swirl number with respect to the combustion temperature and composition of exhausted gas in the specific combustor design.

• Corrosion Science and Technology
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• v.2 no.5
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• pp.225-232
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• 2003

High temperature oxidation of SUS430 and SUS304 stainless steels in 16.7 kPa $O_2$ - 20.3 kPa $H_2O$ - balanced N2 atmosphere at 1273 K was studied focused on the scale spalling during cooling after an isothermal oxidation. Spalling of the oxide scale during cooling occurred only for SUS304 stainless steel. The oxide scale was composed of two layers and they detached at the interface between them. The reason for the spalling could not be explained only by thermal stresses applied to the specimen during heating and cooling. A new mechanism for scale spalling was proposed based on combination of thermal stresses and thermal shock caused by a fast Martensite transformation of substrate metal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.48-51
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• 1995

We have developed the three dimensional mesh generator for three dimensional process simulation using the FEM(Finite Element Method). Tetrahedron element construct the presented three dimensional mesh, which is suitable for the simulation of three dimensional behavior of the LOCOS. The simulation of thermal oxidation is one of the problem in scale downed semiconductor processes. As three dimensional simulators use the huge size of the memory, we use the efficient method that generates the new nodes inside the growing oxide and removes the nodes nearby the SiO2/Si interface in silicon. The resented three dimensional mesh generator was designed to be used in various process simulations, for instance thermal oxidation, silicidation, nitridation, ion implantation, diffusion, and so on.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.119-123
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• 2006

This work presents the fabrication and characteristics of $Bi_2O_3/Si$ heterojunction prepared by rapid thermal oxidation technique without any postdeposition annealing condition. The bismuth trioxide film was deposited onto monocrystalline Si and glass substrates by rapid thermal oxidation of bismuth film with aid of halogen lamp at $500^{\circ}C/\;45$ s in static air. The structural, optical and electrical properties of $Bi_2O_3$ film were investigated and compared with other published results. The structural investigation showed that the grown films are polycrystalline and multiphase (${\alpha}-Bi_2O_3$ and ${\beta}-Bi_2O_3$). Optical properties revealed that these films having direct optical band gap of 2.55 eV at 300 K with high transparency in visible and NIR regions. Dark and illuminated I-V, CV, and spectral responsivity of $Bi_2O_3/Si$ heterojunction were investigated and discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.51-54
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• 2009

Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at $500^{\circ}C$/45s condition on textured single-crystal n-Si substrate to form $Cu_2O$/n-Si heterojunction photodiode. The Hall effect measurements for the $Cu_2O$ films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 nm, 625-700 nm, and 750nm denoted as regions A, B, and C, respectively.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.289-295
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• 2014

${\alpha}-V_2O_5$ nanorods were grown by means of electron beam irradiation and thermal oxidation methods and the visible emission properties of the nanorods grown by both methods were investigated. The growth and crystallinity of the nanorods were greatly enhanced by the insertion of a buffer layer. The emission spectra of the nanorods grown by thermal oxidation and electron beam irradiation showed a peak centered at 710~720 nm, which is believed to be due to oxygen vacancies introduced during the growth process. Also, the emission peak centered at 530 nm observed in the $V_2O_5$ nanorods grown by electron beam irradiation was considered to be due to the band edge transition as a result of the enhanced crystallinity.

• Journal of the Korean institute of surface engineering
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• v.35 no.5
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• pp.325-329
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• 2002

We investigated the oxide thickness and color evolution with the oxidation temperatures between $370^{\circ}C$ and $950^{\circ}C$ for 30 minutes in an electric furnace. Oxide thickness and color index were determined by cross sectional field emission scanning electron microscopy (FESEM) images and digital camera images, respectively. We confirmed that thermal oxidation was suitable for the mass production of color-titanium products, while coloring process window was narrow compared with anodizing oxidation process.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1303-1305
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• 1998

In order to reduce or avoid oxidation problem at operation the interconnects in SOFCs have so far mostly been made of ceramic material. It has high chemical stability both under cathode and anode condition, relatively thermal expansion coefficient that matchs that of electrolyte material YSZ. But this material shown rather weak in the low oxygen atmosphere and thermal shock, and it has lower mechanical strength than alloys. To avoid these problems one may consider to use metals or alloys as materials for interconnects. Metallic interconnects are advantageous because of their high thermal and electronic conductivities. But it has some problems, Those are high thermal expansion and oxidation at high temperature in air. To solve these problems in the interconnection material in this study, $LaCrO_3$-dispersed Cr alloys for metallic interconnector of SOFC have been investigated as a fuction of $LaCrO_3$ content in the range of 5 to 25 vol.%. The Cr alloy were prepared by mixing Cr and $LaCrO_3$ powders in high-energy ball mill for 48h and by sintering under Ar atmosphere with 5vol.% $H_2$ for 10h at $1500^{\circ}C$. The alloys had a relative density of 95% and above. The Cr alloys in composed of two kind of small $LaCrO_3$ and large Cr particles. As the $LaCrO_3$ content increased, the Cr particle size decreased but the $LaCrO_3$ particle size remained contant. Also the oxidation tests show that the $LaCrO_3$-dispersed Cr is very resistant to oxidation in air. These results means that $LaCrO_3$-dispersed Cr is a useful material for metallic interconnect of planar SOFC.