• 대한기계학회논문집B
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• 제25권1호
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• pp.36-46
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• 2001

Finite element analyses of the ceramic drying process are performed. The heat and moisture movements in green ceramics caused by temperature gradient, moisture gradient, conduction, convection and evaporation are considered. The finite element formulation for solving the temperature and moisture distributions which not only change the volume but also induce the hygro-thermal stress is carried out. In order to verify the formulation, the drying process of a ceramic electric insulator is simulated. Temperature distribution, moisture distribution, and hygro-thermal stress are compared with those of other researcher. Good agreements are achieved.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.956-960
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• 2009

The characteristics of organic films can be affected by the temperature of evaporation source because the temperature of evaporation source has an effect on substrate temperature during OLED fabrication process using the thermal evaporation. To investigate the characteristics of OLED devices fabricated by using thermally damaged organic films, I-V-L and half life-time in OLED devices fabricated with various substrate temperatures were measured. During emission layer(EML) evaporation, OLED devices with a structure of ITO(100 nm)/ELM200(50 nm)/NPB(30 nm)/$Alq_3$(55 nm)/LiF(0.7 nm)/Al(100 nm) were fabricated at various substrate temperatures(room temperature, $30^{\circ}C$, $40^{\circ}C$, and $50^{\circ}C$). The characteristics of current density and luminance versus applied voltage in OLED devices fabricated shows that many electrical currents flowed and high brightness appeared at low voltage, but that the lifetime of OLED devices dropped suddenly. This phenomenon explained that the crystallization of $Alq_3$ thin film appeared owing to the substrate heating during evaporation.

• 방사성폐기물학회지
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• 제8권1호
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• pp.41-48
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• 2010

전해정련공정을 통해 생산된 우라늄 전착물은 약 30%의 용융염을 포함하고 있으므로, 순수한 우라늄을 회수하여 금속 잉곳으로 용이하게 제조하기 위해서는 용융염을 먼저 제거하는 공정이 필요하다. 우라늄 전착물의 염증류 거동을 고찰하기 위해서는 염증류의 주요 공정변수인 유지온도와 진공압의 염제거율에 대한 영향를 고찰해야 한다. 이전 연구에서 우라늄전착물에 대한 염증류 거동에 대해 Hertz-Langmuir 관계식을 적용하여 각 용융염의 휘발 조건에 대해 염휘발계수를 얻을 수 있었으며 이로부터 우라늄 전착물에 대해 99% 이상의 염제거율을 나타내는 염증류공정의 조업조건을 도출하였다[1]. 한편, 염증류 장치에서 사용되는 재질인 스테인리스강에 대해 우라늄 전착물에서 염휘발된 우라늄 금속이 스테인리스강의 주성분인 철, 니켈, 크롬 등과 공정(eutectic melt)을 형성하지 않는 온도에서 염증류공정을 수행해야 하는 제한 조건이 따른다. 이번 연구에서는 우라늄 금속과 스테인리스강과의 반응성을 검토함으로써 우라늄 전착물의 염을 99% 이상 제거할 수 있는 조건을 확인하였다. 그리고 염증류 속도를 증진시키며 휘발된 염을 더 효율적으로 회수하기 위해 공급되는 알곤 흐름에 의한 염증류 장치의 열해석을 수행함으로써 알곤 흐름에 의한 우라늄 전착물에 대한 염증류 거동을 고찰하였다.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2001년도 제34회 추계학술대회 개최
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• pp.27-34
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• 2001

A new functionally gradient metal coating method using an atomic mixing technique was developed. In this work the effect of silver atomic mixing on the tribological characteristics of silver$.$ films. has been investigated experimentally. Atomic mixing was implemented by using the, bombardment .of accelerated Ar ions during the thermal evaporation coating process of silver films. Experiments were performed in dry conditions using a ball-on-disk test rig at a load range of 19.6 mN - 17.64 N and a sliding velocity of 20 mm/sec. Results showed that the life of functionally gradient silver coating was enhanced about 100 times more than that of thermally evaporated silver coating and 2 times more than that of IBAD silver coating. The functionally gradient. film also showed low friction and wear compared to those of the evaporated silver and

• 한국재료학회지
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• 제18권3호
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• pp.123-127
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• 2008

The production of tin oxide ($SnO_2$) microrods on iridium (Ir)-coated substrates was achieved through the thermal evaporation of Sn powders in which a sufficiently high $O_2$ partial pressure was employed. Scanning electron microscopy revealed that the product consisted of microrods with diameters that ranged from 0.9 to $40\;{\mu}m$. X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction indicated that the microrods were $SnO_2$ with a rutile structure. As the microrod tips were free of metal particles, it was determined that the growth of $SnO_2$ microrods via the present route was dominated by a vapor-solid mechanism. The thickening of rod-like structures was related to the utilization of sufficiently high $O_2$ partial pressure during the synthesis process, whereas low $O_2$ partial pressure facilitated the production of thin rods.

• 한국분말재료학회지
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• 제10권4호
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• pp.275-280
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• 2003

Synthesis and characteristics of Cu nanopowder were considered by in-situ characterization method using SMPS in pulsed wire evaporation process. With increasing pressure in chamber, particle size and degree of agglomeration increased by increase of collision frequency. Also, it was found from the XRD analyses and BET measurements that crystallite size and particle size decreased with elevating applied voltage. However, SMPS measurements and TEM observation revealed the increase of particle size and degree of agglomeration with increase of applied voltage. These results suggested that particle growth and agglomeration depend on overheating factor in chamber at the early stage and thermal coagulation in filtering system during powder formation until collection.

• 전자공학회논문지A
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• 제29A권8호
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• pp.89-98
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• 1992

IIM(Implantation Into Metal) process usning Co silicides has been investigated to obtain ultra-shallow junctions less than 0.1$\mu$m. Rapid Thermal Annealing using halogen lamps was employed to form CoSi$_2$ and junctions simultaneously.. Resistivities of CoSi$_2$ were 13-17$\mu$ $\Omega$-cm. CoSi$_2$/p$^{+}$/Si and CoSi$_2$/n$^{+}$/Si junction were formed by diffusion of B and As, respectively, from Co film. It was found out that B and As were severely lost by the evaporation during high temperature annealing Therefore SiO$_2$ capping layers were introduced to prevent the evaporation of the implanted dopants from the films. Investigation of the behavior of dopants with respect to annealing time revealed that increasing the annealing time enhanced the diffusion of dopants into Si from CoSi$_2$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1220-1224
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• 2007

The effects of plasma damages to the organic thin film transistor (OTFT) during the fabrication process are investigated; metal deposition process on the organic gate insulator by plasma sputtering mainly generates the process induced damages of bottom contact structured OTFTs. For this study, various deposition methods (thermal evaporation, plasma sputtering, and neutral beam based sputtering) and metals (gold and Indium-Tin Oxide) have been tested for their damage effects onto the Poly 4-vinylphenol(PVP) layer surface as an organic gate insulator. The surface damages are estimated by measuring surface energies and grain shapes of organic semiconductor on the gate insulator. Unlike thermal evaporation and neutral beam based sputtering, conventional plasma sputtering process induces serious damages onto the organic surface as increasing surface energy, decreasing grain sizes, and degrading TFT performance.

• 한국결정성장학회지
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• 제9권3호
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• pp.347-352
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• 1999

세라믹 애자 건조공정의 유한요소 시뮬레이션으로 건조공정중 애자의 온도분포, 습도분포, 습열응력분포, 그리고 변형형상을 예측하였다. 유한요소 수식화에서 온도구배, 습도구배, 전도, 대류 및 증발을 고려하여 불소성 세라믹의 온도분포와 습도분포를 구하였고, 온도 및 습도변화로 인한 체적 변화로부터 습열응력을 구하였다. 유한요소 수식화를 기초로 컴퓨터 프로그램을 개발하고, 개발된 프로그램을 사용하여 세라믹 애자의 건조공정을 시뮬레이션 하였다.

• 한국식품과학회지
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• 제23권5호
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• pp.605-609
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• 1991

과일쥬스의 농축공정 중 고려되어야 할 중요한 공학적 물성치로는 비점상승, 밀도, 점도 등이다. 이들 물성치는 식품성분에 따라 고유한 특성을 나타내며 고형분의 함량, 압력, 온도에 따라 변화한다. 따라서 본 논문에 있어서 비점상승에 영향을 미치는 고형분의 함량과 압력에 대한 비점상승을 측정하였고 이에 따른 예측 모델식을 수립 하였다. 비점 상승도는 조작압력 및 고형분 함량을 독립변수로 하여 추정된 몇 가지 함수식으로부터 SPSS 통계 package 중 regression program을 이용하여 단순 회귀시켜 R값이 가장 높은 모델식을 택하였다. 또한 밀도는 고형분 함량에 따라 점도는 온도와 고형분 한량에 따라 예측 모델식을 각각 수립하였다.