• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• 제11B권4호
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• pp.180-184
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• 2001

The high operation frequency mainly reduces transformer volume in the power supply. A high frequency and high voltage pulse transformer is designed, fabricated, and tested. Switching frequency of the transformer is 100 kHz. Input and output voltages of the transformer are 250 V and 4 kV, respectively. Normal operation power of the transformer is 3 kW. Maximum volume of the transformer is 400 $cm^3$. The power density is thus 7.5 W/$cm^3$. The transformer will be installed in a metal box that has nominal operation temperature of 85 degree centigrade. The transformer and other high voltage components in the box will be molded with Silicon RTV(Room Temperature Vulcaniza) that has a very low thermal conductivity. Procedure of design and test results are discussed. Analytical as well as experimental results of varous paramters such as transformer loss, leakage inductance, distributed capacitance are also discussed. In addition, thermal analysis results from ANSYS code for three different operation conditions are discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.2061_2062
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• 2009

Within serviced period of time in transformer, thermal stress is the most influential parameter affecting the aging behavior of an insulation system. The thermal stress on the insulation system may occur from operation in a high temperature environment due to Joule's heat at winding coils. This paper describes a development of capacitive sensor and preventive diagnosis techniques for electrical insulating oil, widely used for power and distribution transformer. To survey the dielectric properties of the virgin and used mineral insulating oil, we utilized the highly precise measuring system of KRISS. And the results were used to determine the design factors of the sensor. To evaluate diagnosis by the sensor, we performed accelerated aging test about insulating oils. The condition of aged specimens were investigated by measurements of relative permittivity i.e. capacitance change by capacitive sensor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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• pp.82-84
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• 1993

A method for simulating general characteristics and temperature characteristics of magnetizing fixture coil of the capacitor discharge impulse magnetizer-magnetizing fixture system using SPICE is presented. This method has been developed which can aid the design, understanding and inexpensive, time-saving of magnetizing circuit. As the detailed characteristics of magnetizing circuit can be obtained, the efficient design of the magnetizing circuit which produce desired magnet will be possible using our SPICE modeling. Especially, The knowledge of the temperature of the magnetizing fixture is very important to forecast the characteristics of the magnetizing circuits tinder different conditions. The capacitor voltage was not raised above 810[V] to protect the magnetizing fixture from excessive heating. The temperature estimation method uses multi-lumped model with equivalent thermal resistance and thermal capacitance.

• Journal of Korean Vacuum Science & Technology
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• 제2권1호
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• pp.25-31
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• 1998

The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권4호
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• pp.208-212
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• 2004

In this paper, the characteristics of co-sputtered Ru-Zr metal alloy as gate electrode of MOS capacitors have been investigated. The atomic compositions of alloy were varied by using the combinations of relative sputtering power of Ru and .Zr. C-V and I-Vcharacteristics of MOS capacitors were measured to find the effective oxide thickness and work function. The alloy made of about 50% of Ru and 50% of Zr exhibited an adequate work function for nMOS. C-V and I-V measurements after 600 and $700^{\circ}C$ rapid thermal annealing were performed to prove the thermal and chemical stability of the Ru-Zr alloy film. Negligible changes in the accumulated capacitance and work function before and after annealing were observed. Sheet resistance of Ru-Zr alloy was lower than that of poly-silicon. It can be concluded that the Ru-Zr alloy can be a possible substitute for the poly-silicon used as a gate of nMOS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.425-428
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• 1999

In this paper, the electrical properties of Pt/YMnO$_3$/Si(100) structures with difference rapid thermal annealing (RTA) treatment were investigated. YMnO$_3$films were obtained without buffer layers, introducing oxygen. A typical value of the dielectric constant was about 20 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 150kV/cm was about 1.34$\times$10$^{12}$ $\Omega$ . cm. The minimum interface state density around midgap was estimated to be about 5$\times$10$^{11}$ cm$^2$. eV.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.542-545
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• 1987

THE ELECTRICAL CHARACTERISTICS Of RAPID THERMAL OXIDES AND NITRIDED OXIDES HAVE BEEN INVESTIGATED. R.T.OXIDE FILMS HAVE BEEN PREPARED BY ONLY R.T. OXIDATION OR R.T.OXIDATION AND SUBSEQUENT R.T.ANNEAL. NITRIDED OXIDE FILMS HAVE BEEN PREPARED BY R.T.OXIDATION AND SUBSEQUENT R.T.NITRIDATION.AND CONVENTIONAL OXIDES ALSO HAVE BEEN PREPARED TO COMPARE WITH R.T.P OXIDES. R.T.ANNEALED OXIDES SHOW EXCELLENT BREAKDOWN FIELD. LEAKAGE CURRENT AND TDDB CHARACTERISTICS. ALSO, CAPACITANCE Of R.T NITRIDED OXIDES ARE SUPERIOR BY 10% TO CONVENTIONAL OXIDES, BUT TDDB CHARACTERISTIC ARE POORER THAN OXIDE FILMS.

• 센서학회지
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• 제2권1호
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• pp.19-27
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• 1993

본 논문은 $n^{+}$ 에피택셜층을 이용한 전기화학 에칭스톱과 글라스-실리콘의 양극 접합기술을 이용하여 저 압력측정을 위한 용량형 압력센서를 제작한 것이다. 제작된 센서는 하이브리드형으로 센서 커패시터와 기준 커패시터를 갖는 센서 칩과 두가지 출력검출회로 칩으로 구성되어 있다. 이 제작된 센서는 다이아프램 크기가 $1.0{\times}1.0 mm^{2}$이고, 두께가 $10{\mu}m$로 제작된 센서는 압력이 인가되지 않을 때 용량의 크기가 7.1 pF이고, 10 KPa 압력에서 감도가 5.2 %F.S.이다. 또 용량을 전압으로 검출하는 컨버터회로를 이용할 경우, $5{\sim}45^{\circ}C$ 온도범위에서 영점 온도특성과 감도 온도특성은 각각 0.051 %F.S./$^{\circ}C$와 0.12 %F.S./$^{\circ}C$ 이다.

• 센서학회지
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• 제5권5호
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• pp.63-68
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• 1996

출력신호를 검출하기 위한 집적화한 용량형 압력센서를 구현하기 위해서는 센서의 특성에 나쁜 영향을 미치는 기생용량, 온도/열 드리프트 및 누설전류 등의 요소가 개선 되어야 한다. 본 논문에서는 2개의 용량-주파수 변환기와 4비트 디지탈 보상회로로 구성된 새로운 이상적인 인터페이스 회로를 설계 하였다. 이 회로는 센싱 센서 주파수를 기준 센서 주파수로 나누어줌으로써 드리프트 및 누설전류의 영향이 제거될 수 있도록 설계 되었고, 신호 전송시 잡음의 영향이 적은 디지탈 신호를 처리하도록 되어있다. 그르므로 이 회로는 디지탈 비트수를 늘려 줌으로 출력신호의 분해능을 향상 시킬 수 있다. 또 이 회로 중 디지털 부분은 FPGA 칩으로 제작되어 그 작동이 확인 되었다.

• 한국지열·수열에너지학회논문집
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• 제5권1호
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• pp.1-6
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• 2009

In this study, an ORC (Organic Rankine Cycle) is investigated for a low-temperature geothermal power generation by a simulation method. A steady-state simulation model is developed to analyze cycle's performance. The model contains a turbine, a pump, an expansion valve and heat exchangers. The turbine and pump are modelled by an isentropic efficiency. Simulations were carried out for the given heat source and sink inlet temperatures, and given flow rate that is based on the typical power plant thermal-capacitance-rate ratio. HFC-245fa is considered as a working fluid of the cycle. Simulation results, at the given secondary working fluids conditions, show that even though the power can be presented by both the evaporating temperature and the turbine inlet superheat, it depends on the evaporating temperature primarily.