• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1136-1141
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• 2003

The primary insulation materials used in an oil filled transformer are kraft paper, wood, porcelain and oil. Modern transformers use chemically treated paper to improve its tensile strength and resistance to aging caused by immersion in oil. But these insulation papers are mainly aged by thermal stress. Over the life time of the insulation paper and oil, it is exposed to high temperatures, oxygen and water. Its interaction with the steel of the tank and core plus the copper and aluminium of the windings will eventually cause the chemical properties of the oil to decay. High temperature have an effect on mechanical strength of cellulous paper used in the layer insulation. We made two aging cells in which insulation papers and mineral oil are conducted to test thermal properties. It is measured dielectric strength, number of acid, moisture, etc. of insulation paper and oil aged in the aging cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.406-409
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• 2002

The primary insulation system used in an oil-filled transformer is Kraft paper, wood, porcelain and, of course, oil. Modern transformers use paper that is chemically treated to improve its tensile strength properties and resistance to aging caused by immersion in oil. These insulation papers are mainly aged to thermal stress. Over the course of the insulation paper and oil's life it is exposed to high temperatures, oxygen and water. Its interaction with the steel of the tank and core plus the copper and aluminium of the windings will eventually cause the chemical properties of the oil to decay. High temperature have an effect on mechanical strength of cellulous paper using the layer insulation. We made two aging cell in which thermal aging tests of insulation papers and mineral oil are conducted. It is measured dielectric strength, number of acid, moisture, etc. of insulation paper and oil aged in the aging cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.560-564
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• 1999

In general, the main dielectric materials for EHV electric appliances were epoxy, EPDM and Silicone rubber. The Silicone rubber has been rosed so many among them in EHV appliances in the worldwide, especially in Europe and North America. The reason why it is very stable in the thermal, mechanical and electrical environment. Therefore it is still becoming increasingly widespread in the application of the EHV appliances as a main dielectric material. On this study, investigated about real appliances and tested on basic properties of the Silicone rubber compared to organic dielectric material that is EPDM. At the result, the Silicone rubber is more dominant as main dielectric material for EHV appliances than any other organic polymers.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.19-24
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• 1983

Dielectrics used as capacitor was studied in the system of $Pb(MgW)_{0.5} O_3-PbTiO_3-PbZrO_3$ Curie tempera-tures of $PbTiO_3 PbZrO_3$ and $Pb[MgW]_{0.5} O_3$ were 49$0^{\circ}C$ 23$0^{\circ}C$ and 39$0^{\circ}C$ respectively. When these materials formed solid solution the more amount of $Pb(MgW)_{0.5}O_3$ was increased the more Curie temperature lowered and dielectric constant increased. Higher dielectric constants were measured in the solid solution of which X-Ray diffraction patterns were changed. Especially Curie temperature and dielectric constant were 85$^{\circ}C$ and 4159 respectively in the composition of 60 $Pb(MgW)_{0.5}O_3-30 PbTiO_3-10PbZrO_3$. Also in this composition ferroeletric material with thermal stability was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.480-483
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• 2000

Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, the electrical properties of PI LB films were investigated at room temperature. At low electric field, ohmic conduction(I∝V) was observed and the calculated electrical conductivity was about 9.7$\times$10$^{-15}$ S/cm. At high electric field, conduction(I∝V$^2$) was observed and the conduction mechanism was explained by space charge limited region effect. The dielectric constant of LB film was about 7.5.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.386-389
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• 2007

The dielectric properties of $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films have been investigated according to the substrates in order to optimize the their properties. MgO, r-plane sapphire, and poly-crystalline sapphire (Alumina) substrates have been used to deposite $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films by RF magnetron sputtering. The BST thin films deposited on the single crystal (100)MgO substrates have high tunability and low dielectric loss. These results are caused by a low misfit between the lattice parameters of the BST films and the substrate. The BST films deposited on r-plane sapphire have relatively high misfit, and the tunability of 17% and dielectric loss of 0.0007. To improve the dielectric properties of the BST films, the post-annealing methods has been introduced. The BST films deposited on (100)MgO, (1102)r-plane sapphire, and poly-crystalline sapphire substrates have best properties in post-annealing conditions of $1050^{\circ}C$, $1100^{\circ}C$, and $1150^{\circ}C$, respectively. The different optimal post-annealing conditions have been found according to the different misfits between the films and substrates, and thermal expansion coefficients. Moreover, the films deposited on alumina substrate which is relatively cheap have a good tunability properties of 23% by the post-annealing.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.95-101
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• 1995

Crystallizable glasses with precipitation of celsian, anorthite, wollastonite and gahnite were prepared for the purpose of insulating dielectric layers in devices such as integrated circuit substrates. The starting glasses were prepared by melting the batches for 1 hour at 1450.deg. C and then Quenching to a distilled water. And crystallization behavior of these glasses were studied by DTA, TMA, XRD analysis and by the measurement of dielectric properties. The overall composition of the glass-ceramic consists in weight percent of 30-35% A1$_{2}$O$_{3}$, 13-26% BaO, 5-21% CaO, 10-24% ZnO, 4.5-9.0% TiO$_{2}$ and 4-8% B$_{2}$O$_{3}$. As a result, in barium-rich glasses only celsian phase was developed in the range of 850-900.deg. C. Also, the thermal expansion coefficient, dielectric constant and quality factor of these glass-ceramics were 68*10$^{-7}$ /.deg. C, about 9 and more than 1000, respectively.

• Transactions on Electrical and Electronic Materials
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• v.4 no.1
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• pp.15-20
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• 2003

NiCr alloys are prepared onto poly-Si/ $SiO_2$/Si substrates to replace Pt bottom electrode with a new one for integration of high dielectric constant materials. Alloys deposited at Ni and Cr power of 40 and 40 W showed optimum properties in the composition of N $i_{1.6}$C $r_{1.0}$. The grain size of films increases with increasing deposition temperature. The films deposited at 50$0^{\circ}C$ showed a severe agglomeration due to homogeneous nucleation. The NiCr alloys from the rms roughness and resistivity data showed a thermal stability independent of increasing annealing temperature. The 80 nm thick BST films deposited onto N $i_{1.6}$C $r_{1.0}$/poly-Si showed a dielectric constant of 280 and a dissipation factor of about 5 % at 100 kHz. The leakage current density of as-deposited BST films was about 5$\times$10$^{-7}$ A/$\textrm{cm}^2$ at an applied voltage of 1 V. The NiCr alloys are possible to replace Pt bottom electrode with new one to integrate f3r high dielectric constant materials.terials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.174-180
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• 1998

In this work, the properties of FRP, which is applied recently in the composite insulating materials, by thermal treatment were investigated. The specimens were epoxy glass laminates fabricated by thermal press method and had the volume content of 46[%] cutted $45^{\circ}C$ in the fiber direction and 1.0[mm] thickness. The experimental results showed that the amount of weight loss, wettability, surface potential, and surface resistivity increased up to 200[$^{\circ}C$] as a function of temperature. Usually, most degradations caused the hydrophilic to decrease the contact angle. But, in this work on thermal-degradated FRP, we can confirm the introduction of hydrophobic properties by cross-linking and the ablation of polar small-molecules rather than chain scission and oxidation. Finally, weight loss and contact angle increased. These phenomena show the existence of hydrophobic surface. With the change to the hydrophobic surface and the electrical potential and resistivity on FRP surface increased. But, the dielectric properties and tensile stength are decreased.