• 한국결정성장학회지
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• 제10권2호
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• pp.96-99
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• 2000

우리는 hot-well epiraxy 방법으로 성장된 ZnSe 박막의 광발광 측정을 10 K에서 실행하였다. as-grown 박막은 upper polartion과 lower polarition으로 분리된 중성 도너(donor) bound exciton $I_2$($D^{\circ}$,X)가 아주 우세하게 관측되었고 Se분위기 열처리 결과 $I_2$기원이 Se-vacancy에 관련이 있음을 알았다. 또 중성 억셉터(acceptor) bound exciton $I_1$$^d$발광이 관측되었다. 그런데 ZnSe는 self-compensated에 의해 p-type 반전이 어렵다. 우리는 Se 분위기 열처리로부터 $I_1$$^d$ 봉우리가 아주 우세함을 보였다. 이것은 열처리한 ZnSe 박막에 억셉터가 풍부하게 존재한다는 것을 의미하며 결과적으로 광학적인 p-type 반전을 분명하게 관측 할 수 있었다. 또한 엑셉터 불순물의 결합 에너지는 268meV이였다. 장파장대에서 SA 발광은 Se 분위기 열처리 후 사라진 것으로 보아 Se-vacancy와 관련이 있는 것으로 고찰되었다.

• 한국재료학회지
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• 제22권9호
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• pp.489-493
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• 2012

Green phosphors $K_2BaW_2O_8:Tb^{3+}$(1.0 mol%) were synthesized by solid state reaction method. Differential thermal analysis was applied to trace the reaction processes. Three endothermic values of 95, 706, and $1055^{\circ}C$ correspond to the loss of absorbed water, the release of carbon dioxide, and the beginning of the melting point, respectively. The phase purity of the powders was examined using powder X-ray diffraction(XRD). Two strong excitation bands in the wavelength region of 200-310 nm were found to be due to the ${WO_4}^{2-}$ exciton transition and the 4f-5d transition of $Tb^{3+}$ in $K_2BaW_2O_8$. The excitation spectrum presents several lines in the range of 310-380 nm; these are assigned to the 4f-4f transitions of the $Tb^{3+}$ ion. The strong emission line at around 550 nm, due to the $^5D_4{\rightarrow}^7F_5$ transition, is observed together with weak lines of the $^5D_4{\rightarrow}^7F_J$(J = 3, 4, and 6) transitions. A broad emission band peaking at 530 nm is observed at 10 K, while it disappears at room temperature. The decay times of $Tb^{3+}$ $^5D_4{\rightarrow}^7F_5$ emission are estimated to be 4.8 and 1.4 ms, respectively, at 10 and 295 K; those of the ${WO_4}^{2-}$ exciton emissions are 22 and 0.92 ${\mu}s$ at 10 and 200 K, respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.27.1-27.1
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• 2011

The recent extensive research of one-dimensional (1D) nanostructures such as nanowires (NWs) and nanotubes (NTs) has been the driving force to fabricate new kinds of nanoscale devices in electronics, optics and bioengineering. We attempt to produce silicon oxide nanowires (SiOxNWs) in a simple way without complicate deposition process, gaseous Si containing precursors, or starting material of $SiO_2$. Nickel (Ni) nanoparticles (NPs) were applied on Si wafer and thermally treated in a furnace. The temperature in the furnace was kept in the ranges between 900 and $1,100^{\circ}C$ and a mixture of nitrogen ($N_2$) and hydrogen ($H_2$) flowed through the furnace. The SiOxNWs had widths ranging from 100 to 200 nm with length extending up to ~10 ${\mu}m$ and their structure was amorphous. Ni NPs were acted as catalysts. Since there were no other Si materials introduced into the furnace, the Si wafer was the only Si sources for the growth of SiOxNWs. When the Si wafer with deposition of Ni NPs was heated, the liquid Ni-Si alloy droplets were formed. The droplets as the nucleation sites induce an initiation of the growth of SiOxNWs and absorb oxygen easily. As the droplets became supersaturated, the SiOxNWs were grown, by the reaction between Si and O and continuously dissolving Si and O onto NPs. Photoluminescence (PL) showed that blue emission spectrum was centered at the wavelength of 450 nm (2.76 eV). The details of growth mechanism of SiOxNWs and the effect of Ni NPs on the formation of SiOxNWs will be presented.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1996년도 춘계학술발표회논문집(2)
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• pp.513-518
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• 1996

This report presents a demonstration of application of realistic evaluation methodology to a posturated cold leg large break LOCA in a Westinghouse three-loop pressurized water reactor with 17$\times$17 fuel. The new method of this analysis can be divided into three distinct step: 1) Best Estimate Code Validation and Uncertainty Quantification 2) Realistic LOCA Calculation 3) Limiting Value LOCA Calculation and Uncertainty Combination RELAP5/MOD3/K ［1］, which was improved from RELAP5/MOD3.1, and CONTEMPT4/MOD5 code were used as a best estimate thermal-hydraulic model for realistic LOCA calculation. The code uncertainties which will be determined in step 1) were quantified already in previous study ［2］, and thus the step 2) and 3) for plant application were presented in this paper. The application uncertainty parameters are divided into two categories, i.e. plant system parameters and fuel statistical parameters. Single parameter sensitivity calculations were performed to select system parameters which would be set at their limiting value in Limiting Value Approach (LVA) calculation. Single run of LVA calculation generated 27 PCT data according to the various combinations of fuel parameters and these data provided input to response surface generation. The probability distribution function was generated from Monte Carlo sampling of a response surface and the upper 95$^{th}$ percentile PCT was determined. Break spectrum analysis was also made to determine the critical break size. The results show that sufficient LOCA margin can be obtained for the demonstration NPP.

• 한국전자파학회논문지
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• 제8권3호
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• pp.254-263
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• 1997

通信 및 電子훌業의 發達에 따라, 電磁波放射에 對한 밟素鐵維彈化樹(CFRTP)의 電磁波 避廠效果(SE)를 冊究하는 것은 重要하다. 本R究에서는 밟素熾維(CF)의 避빼옷效果를 電波8홉室內에서, 驗的으로 測定하였다. 使用한 樹服는 PC, PP, PEl, PMMA 및 PA이다. 實嚴은 分光分析器에 의해 鋼避蘇箱子와 모노폴안테나를 使用해 修行하였다. 훌훌結果로부터 CF는 良好한 電磁波適嚴材의 한 候補임을 알 수 있었다. SE는 CF의 積層의 增加에 따라 增加하였다. 徵小한 揚傷의 增加는 CF의 平面密度, 透過두께 및 反射角의 增加로 인해 SE를 增加 시켰다. SE에 미치는 다른 特性들은 母材樹服, 안테나問의 距離 및 노이즈의 周波數에 따라 달랐다.

• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.730-735
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• 2014

In this study, the temperature characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film which is degradated at the $120^{\circ}C{\sim}200^{\circ}C$ temperature range in the oven for 10 hours has been measured in through the applied frequency range of 0.1 kHz~4,800 kHz at temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Also, in the same conditions, the frequency characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film has been measured in through the applied temperature range of $30^{\circ}C{\sim}70^{\circ}C$ on setting frequency of 0.1 kHz, 1 kHz, 10 kHz, 100 kHz. The results of this study are as follows. When the frequency range of 0.1 kHz~4,800 kHz applied to the sample of Teflon film, the electrostatic capacity has been measured at the temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Through this measurement, it found that the electrostatic capacity decreased with increasing temperature. Regarding this result, may be it is because the electromagnetic coupling is degraded by thermal degradation. When the sample of Teflon film heated at $280^{\circ}C$ for 10 hours in oven, the dielectric loss has changed from unstable status to stabilizing status with increasing the degradation temperature in the $120^{\circ}C$, $160^{\circ}C$, $200^{\circ}C$ range. In this measurement, the two spectrums of dielectric loss appeared. It considers that this spectrum of dielectric loss appeared in 300 Hz is caused by the molecular motion of the C-F or OH group. Through this study, It found that the electrostatic capacity decreased with increasing frequency and temperature, and there is no change in dielectric loss, although the frequency increases.

• 한국지하수토양환경학회지:지하수토양환경
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• 제20권5호
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• pp.16-25
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• 2015

The City of Boulder is located at an average elevation of 1,655 m (5,430 feet), the foothills of the Rocky Mountains in Colorado. Its daily air temperature is much varying and snow is very frequent and heavy even in spring. This paper examines characteristics of shallow (surface and depth = 10 cm) soil temperatures measured from January to May 2015 in the high elevation city Boulder, Colorado. The surface soil temperature quickly responded to the air temperature with the strongest periodicity of 1 day while the subsurface soil temperatures showed a less correlation and delayed response with that. The short-time Fourier of the soil temperatures uncovered their very low frequencies characteristics in heavy snow days while it revealed high frequencies of their variations in warm spring season. The daily minimum air temperature exhibited high cross-correlations with the soil temperatures without lags unlike the maximum air temperature, which is derived from its higher and longer auto-correlation and stronger spectrums of low frequencies than the maximum air temperature. The snow depth showed an inverse relationship with the soil temperature variations due to snow's low thermal conductivity and high albedo. Multiple regression for the soil temperatures using the air temperature and snow depth presented its predicting possibility of them even though the multiple r² of the regression is not that much satisfactory (r² = 0.35-0.64).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.277-277
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• 2013

The epitaxial graphene on the 4H- or 6H-SiC(0001) surface has been intensively studied due to the possibility of wafer-scale growt. However the existence of interface layer (zero layer graphene) and its influence on the upper graphene layer have been considered as one of the main obstarcles for the industrial application. Among various methods tried to overcome the strong interaction with the substrate through the interface layer, it has been proved that the hydrogen intercalation successfully passivate the Si dangling bond of the substrate and can produce the quasi-free standing epitaxial graphene (QFEG) layers on the siC(0001) surface. In this study, we report the results of the angle-resolved photoemission spectroscopy (ARPES) and Raman spectroscopy for the QFEG layers produced by ex-situ and in-situ hydrogen intercalation.From the ARPES measurement, we confirmed that the Dirac points of QFEG layers exactly coincide with the Fermi level. The band structure of QFEG layer are sustainable upon thermal heating up to 1100 K and robust against the deposition of several metals andmolecular deposition. We also investigated the strain of the QFEG layers by using Raman spectroscopy measurement. From the change of the 2D peak position of graphene Raman spectrum, we found out that unlike the strong compressive strain in the normal epitaxial graphene on the SiC(0001) surface, the strain of the QFEG layer are significantly released and almost similar to that of the mechanically exfoliated graphene on the silicon oxide substrate. These results indicated that various ideas proposed for the ideal free-standing graphene can be tested based on the QFEG graphene layers grown on the SiC(0001) surface.

• 한국환경농학회지
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• 제29권2호
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• pp.165-175
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• 2010

A gas chromatographic (GC) method was developed to determine residues of captan, folpet, captafol, and chlorothalonil, known as broad-spectrum protective fungicides for the official purpose. All the fungicide residues were extracted with acetone containing 3% phosphoric acid from representative samples of five agricultural products which comprised rice, soybean, apple, pepper, and cabbage. The extract was diluted with saline, and dichloromethane partition was followed to recover the fungicides from the aqueous phase. Florisil column chromatography was additionally employed for final cleanup of the extracts. The analytes were then determined by gas chromatography using a DB-1 capillary column with electron capture detection. Reproducibility in quantitation was largely enhanced by minimization of adsorption or thermal degradation of analytes during GLC analysis. Mean recoveries generated from each crop sample fortified at two levels in triplicate ranged from 89.0~113.7%. Relative standard deviations (RSD) were all less than 10%, irrespective sample types and fortification levels. As no interference was found in any samples, limit of quantitation (LOQ) was estimated to be 0.008 mg/kg for the analytes except showing higher sensitivity of 0.002 mg/kg for chlorothalonil. GC/Mass spectrometric method using selected-ion monitoring technique was also provided to confirm the suspected residues. The proposed method was reproducible and sensitive enough to determine the residues of captan, folpet, captafol, and chlorothalonil in agricultural commodities for routine analysis.

• 조명전기설비학회논문지
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• 제20권8호
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• pp.71-79
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• 2006

페놀수지 표면에서의 트래킹 방전에 대한 화재원인을 규명하기 위하여 검증실험, FT-IR, DTA, 사진촬영 등의 다양한 방법으로 분석하였다. 페놀수지는 유기질 절연재료 중 저전압기기의 외함재료로 가장 많이 이용된다. 본 실험에서는 외부열에 의해 탄화질로 변화되는 것과 전기적 원인에 의해 흑연질이 되는 것에 대해 재료분석을 통한 방법으로 규명하였다. FT-IR을 이용하여 표면방전에 의해 탄화된 시료는 $150[^{\circ}C]$에서 열처리된 시료로부터 약 $1730[cm^{-1}]$ 부분과 $1680[cm^{-1}]$부근의 적외선흡광피크를 확인하였다. DTA를 이용하여 페놀수지는 약 $450[^{\circ}C]$ 부근에서 발열피크가 나타났으며, 방전에 의해 탄화된 재료는 약 $610[^{\circ}C]$ 부근에서 발열피크가 나타나는 것을 알 수 있었다. 이로써 전기화재원인을 규명하는 것이 가능하게 되었다. 이 결과들로부터, 전기화재의 예방과 국민의 생명과 재산을 지키는 중요한 자료가 될 것으로 기대된다.