• 제목/요약/키워드: Thermal Modeling

검색결과 982건 처리시간 0.026초

GaN Power FET 모델링에 관한 연구 (Study on Modeling of GaN Power FET)

  • 강이구;정헌석;김범준;이용훈
    • 한국전기전자재료학회논문지
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    • 제22권12호
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    • pp.1018-1022
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    • 2009
  • In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340 V breakdown voltage. The channel thickness was 3 urn and the channel doping concentration is $1e17\;cm^{-3}$. And we carried out thermal characteristics, too.

Analytical Noise Parameter Model of Short-Channel RF MOSFETs

  • Jeon, Jong-Wook;Park, Byung-Gook;Lee, Jong-Duk;Shin, Hyung-Cheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권2호
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    • pp.88-93
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    • 2007
  • In this paper, a simple and improved noise parameter model of RF MOSFETs is developed and verified. Based on the analytical model of channel thermal noise, closed form expressions for four noise parameters are developed from proposed equivalent small signal circuit. The modeling results show a excellent agreement with the measured data of $0.13{\mu}m$ CMOS devices.

화력발전소 과열기 모델링 및 파라미터 추정 (Modeling and Parameter Estimation of Superheater in Thermal Power Plant)

  • 신용환;이형란;신휘범
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2010년도 하계학술대회 논문집
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    • pp.600-601
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    • 2010
  • This paper presents the superheater dynamic modeling and parameter estimation for the thermal plant boiler. The temperature control is closely related to the power plant efficiency and boiler life. The dynamic modeling of the superheater and desuperheater is essentially needed and developed by using the heat balance principle. The simulated model outputs are well matched with the actual ones. It is expected that the proposed model is useful for the temperature controller design.

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화학-기계적 연마 공정의 물질제거 메커니즘 해석 Part I: 연성 통합 모델링 (An Analysis on the Material Removal Mechanism of Chemical-Mechanical Polishing Process Part I: Coupled Integrated Material Removal Modeling)

  • 석종원;오승희;석종혁
    • 반도체디스플레이기술학회지
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    • 제6권2호
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    • pp.35-40
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    • 2007
  • An integrated material removal model considering thermal, chemical and contact mechanical effects in CMP process is proposed. These effects are highly coupled together in the current modeling effort. The contact mechanics is employed in the model incorporated with the heat transfer and chemical reaction mechanisms. The mechanical abrasion actions happening due to the mechanical contacts between the wafer and abrasive particles in the slurry and between the wafer and pad asperities cause friction and consequently generate heats, which mainly acts as the heat source accelerating chemical reaction(s) between the wafer and slurry chemical(s). The proposed model may be a help in understanding multi-physical interactions in CMP process occurring among the wafer, pad and various consumables such as slurry.

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전기자동차 배터리 시스템 개발을 위한 전산설계기술 (Computational Design of Battery System for Automotive Applications)

  • 정승훈
    • 융복합기술연구소 논문집
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    • 제10권1호
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    • pp.37-40
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    • 2020
  • Automotive battery system consists of various components such as battery cells, mechanical structures, cooling system, and control system. Recently, various computational technologies are required to develop an automotive battery system. Physics-based cell modeling is used for designing a new battery cell by conducting optimization of material selection and composition in electrodes. Structural analysis plays an important role in designing a protective system of battery system from mechanical shock and vibration. Thermal modeling is used in development of thermal management system to maintain the temperature of battery cells in safe range. Finally, vehicle simulation is conducted to validate the performance of electric vehicle with the developed battery system.

다중입력 PSS 튜닝 방법과 612 MVA 화력기 적용: Part 1-IEEE PSS2A 튜닝 방법 (Tuning of Dual-input PSS and Its Application to 612 MVA Thermal Plant: Part 1-Tuning Methology of IEEE Type PSS2A Model)

  • 김동준;문영환;김성민;김진이;황봉환;조종만
    • 전기학회논문지
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    • 제58권4호
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    • pp.655-664
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    • 2009
  • This paper, Part 1, describes the effective dual-input PSS parameter design procedure for the IEEE Type PSS2A against the Dangjin 612 MVA thermal plant's EX2000 excitation system. The suggested tuning technique used the model-based PSS tuning method and consisted of three steps: 1) generation system modeling; 2) determination of PSS2A model parameters using linear, time-domain transient and 3-phase simultaneous analyses, and 3) field testing and verification, which are described in Part 2. The effective PSS2A model parameters of EX2000 system in the Dangjin T/P #4 were designed according to the suggested procedure, and verified by using three analyses.

A STUDY ON THE PREDICTION OF THE BASE FLOW CHARACTERISTICS OF A LAUNCH VEHICLE USING CFD

  • Kim Younghoon;Ok Honam;Kim Insun
    • 한국우주과학회:학술대회논문집(한국우주과학회보)
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    • 한국우주과학회 2004년도 한국우주과학회보 제13권2호
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    • pp.258-261
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    • 2004
  • Numerical simulations are made to predict the axial force coefficients of a two-stage launch vehicle, and the results are compared with those by wind tunnel tests. It is found that the forebody axial force is not affected by whether the base of the body is modeled or not. Modeling the sting support used in wind tunnel tests reduced the base axial force compared to the results without it. The present calculation shows that the forebody axial forces are underestimated while the base axial forces are overestimated. The total axial force, therefore, compares with the experimental data with better accuracy by cancelling out the errors of opposite signs. Modeling of the sting support in numerical simulations is found to be necessary to get a better agreement with the experiments for both base and overall axial force coefficients.

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차원축소와 복원관계를 통한 복합재료 보의 열응력 해석 (Thermal Stress Analysis of Composite Beam through Dimension Reduction and Recovery Relation)

  • 장준환;안상호
    • 한국전산구조공학회논문집
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    • 제30권5호
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    • pp.381-387
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    • 2017
  • 섬유강화 복합재료는 열팽창 계수의 방향성을 갖고 있을 뿐만 아니라 제작과정 온도와 실제 사용온도 사이의 차이 때문에 필연적으로 열응력 효과를 받게 된다. 이러한 열응력에 의한 파손현상은 실제 항공우주산업에서의 응용이 증대되고 있는 두꺼운 복합 적층판의 경우에 더욱 현저한 현상으로 적층판의 역학적 기능 및 파단강도에 큰 영향을 미치게 된다. 본 연구에서는 복잡한 재질로 구성되고 높은 세장비를 가진 블레이드 날개 구조의 차원축소 및 열 응력 복원 이론을 소개하고 3차원 유한요소모델과 비교결과를 통해 효율성과 정확성을 입증한다. 또한 차원을 축소한 모델링을 구성하고 복원이론를 이용하여 열적 환경에 적용된 복합재 보 단면의 열응력을 차원 복원하고 시각적으로 형상화하는 효율적인 복원해석 과정을 소개하고자 한다.

고속 열처리공정 시스템에서의 웨이퍼 상의 온도분포 추정 (Estimation of Temperature Distribution on Wafer Surface in Rapid Thermal Processing Systems)

  • 이석주;심영태;고택범;우광방
    • 제어로봇시스템학회논문지
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    • 제5권4호
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    • pp.481-488
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    • 1999
  • A thermal model based on the chamber geometry of the industry-standard AST SHS200MA rapid thermal processing system has been developed for the study of thermal uniformity and process repeatability thermal model combines radiation energy transfer directly from the tungsten-halogen lamps and the steady-state thermal conducting equations. Because of the difficulties of solving partial differential equation, calculation of wafer temperature was performed by using finite-difference approximation. The proposed thermal model was verified via titanium silicidation experiments. As a result, we can conclude that the thermal model show good estimation of wafer surface temperature distribution.

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전력용 반도체소자(IGBT)의 모델링에 의한 열적특성 시뮬레이션 (Modeling and Thermal Characteristic Simulation of Power Semiconductor Device (IGBT))

  • 서영수;백동현;조문택
    • 한국화재소방학회논문지
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    • 제10권2호
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    • pp.28-39
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    • 1996
  • A recently developed electro-thermal simulation methodology is used to analyze the behavior of a PWM(Pulse-Width-Modulated) voltage source inverter which uses IGBT(Insulated Gate Bipolar Transistor) as the switching devices. In the electro-thermal network simulation methdology, the simulator solves for the temperature distribution within the power semiconductor devices(IGBT electro-thermal model), control logic circuitry, the IGBT gate drivers, the thermal network component models for the power silicon chips, package, and heat sinks as well as the current and voltage within the electrical network. The thermal network describes the flow of heat form the chip surface through the package and heat sink and thus determines the evolution of the chip surface temperature used by the power semiconductor device models. The thermal component model for the device silicon chip, packages, and heat sink are developed by discretizing the nonlinear heat diffusion equation and are represented in component from so that the thermal component models for various package and heat sink can be readily connected to on another to form the thermal network.

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