• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.138-145
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• 1998

The $(Pb_{0.9}Ca_{0.1})TiO_3$[PCT] thin films have been deposited by sol-gel processing on Si-wafer and ITO glass substrates. The creak-free films have been obtained by rapid thermal annealing at $700^{\circ}C$ for 10 minute and characterized by XRD, SEM and electrical measurements. Their tetragonality c/a was 1.041 and grain size was $0.15{\sim}0.2{\mu}m$. When the electrode system of sample was Au/PCT/ITO(MFM) and film thickness was $0.8{\mu}m$, dielectric constant, dielectric loss and Curie temperature were about 149, 0.085 and $449^{\circ}C$ at 10kHz, respectively. Spontaneous polarization $P_s$, remnant polarization $P_r$ and coercive field $E_c$ were about $5.29{\mu}C/cm^2$, $4.15{\mu}C/cm^2$ and 82kV/cm calculated by hysteresis loop.

• Fisheries and Aquatic Sciences
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• 제18권2호
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• pp.137-142
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• 2015

Antifreeze proteins and glycoproteins [AF(G)Ps] constitute a group of proteins that lower the freezing but not the melting points of aqueous solutions, enabling polar and north-temperate fish to survive in ice-laden environments. However, little is known about antifreeze activity in temperate fish; such work would extend our knowledge on the functions and evolution of AF(G)Ps. In the present study, we screened for antifreeze activity in temperate fish caught off the coast of Jumunjin ($37.89^{\circ}N$), Gangneung, Korea. Thermal hysteresis (TH) and the ability to inhibit ice recrystallization (IR) in blood, liver, and muscle samples from nine fish were examined to assess antifreeze activity. As the East Sea off the coast of Jumunjin is ice-free year round, we thought it most unlikely that the fish would express antifreeze proteins. Surprisingly, the blood of Pleurogrammus azonus and three types of tissue from Gymnocanthus herzensteini, Zoarces gilli and Kareius bicoloratus exhibited measurable TH values together with the ability to trigger characteristic morphological changes in ice crystals. Blood samples from the three species also evidenced ice recrystallization (IR) inhibition. This implies that AF(G)Ps or other antifreeze-like substances are present in temperate fish even under nonfreezing conditions. These results contribute to our understanding of the functions and origins of antifreeze activity in fish.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.136-139
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• 1999

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.241.1-241.1
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• 2013

최근 고집적화된 금속-산화막 반도체 metal oxide semiconductor (MOS) 소자는 크기가 점점 작아짐에 따라 얇은 산화막과 다양한 High-K 물질과 전극에 대하여 연구되고 있다. 이러한 소자의 열적 안정성과 균일성을 얻기 위해 다양한 열처리 방법이 사용되고 있으며, 일반적인 열처리 방법으로는 conventional thermal annealing (CTA)과 rapid thermal annealing (RTA)이 많이 이용되고 있다. 본 실험에서는 microwave radiation에 의한 열처리로 소자의 특성을 개선시킬 수 있다는 사실을 확인하였고, 상대적으로 $100^{\circ}C$ 이하의 저온에서도 공정이 이루어지기 때문에 열에 의한 소자 특성의 열화를 억제할 수 있으며, 또한 짧은 처리 시간 및 공정의 단순화로 비용을 효과적으로 절감할 수 있다. 본 실험에서는 metal-oxide-silicon (MOS) 구조의 capacitor를 제작한 다음, 기존의 CTA나 RTA 처리가 아닌 microwave radiation을 실시하여 MOS capacitor의 전기적인 특성에 미치는 microwave radiation 효과를 평가하였다. 본 실험은 p-type Si 기판에 wet oxidation으로 300 nm 성장된 SiO2 산화막 위에 titanium/aluminium (Ti/Al) 금속 전극을 E-beam evaporator로 형성하여 capacitance-voltage (C-V) 특성 및 current-voltage (I-V) 특성을 평가하였다. 그 결과, microwave 처리를 통해 flat band voltage와 hysteresis 등이 개선되는 것을 확인하였고, microwave radiation 파워와 처리 시간을 최적화하였다. 또한 일반적인 CTA 열처리 소자와 비교하여 유사한 전기적 특성을 확인하였다. 이와 같은 microwave radiation 처리는 매우 낮은 온도에서 공정이 이루어짐에도 불구하고 시료 내에서의 microwave 에너지의 흡수가 CTA나 RTA 공정에서의 열에너지 흡수보다 훨씬 효율적으로 이루어지며, 결과적으로 산화막과 실리콘 기판의 계면 특성 개선에 매우 효과적이라는 것을 나타낸다. 따라서, microwave radiation 처리는 향후 저온공정을 요구하는 nano-scale MOSFET의 제작 및 저온 공정이 필수적인 display 소자 제작의 해결책으로 기대한다.

• Bulletin of the Korean Chemical Society
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• 제16권10호
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• pp.934-938
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• 1995

A series of solid solutions in the Ca2AlxFe2-xO5 (x=0.00, 0.50, 0.66, 1.00 and 1.34) system with brownmillerite structure has been synthesized at 1100 ℃ under an atmospheric air pressure. The solid solutions are analysed by powder x-ray diffraction analysis, Mohr salt titration, thermal analysis, and Mossbauer spectroscopic analysis. The x-ray diffraction analysis assigns the compositions of x=0.00 and 0.50 to the space group Pcmn and those of x=0.66, 1.00, and 1.34 to the Ibm2. Mo&ssbauer spectra have shown the coordination state and disordering of Al3+ and Fe3+ ions. The substituting preference of Al3+ ions for the tetrahedral site decreases with increasing x value. Magnetic susceptibility of the system has been measured in the temperature range of 5 K to 900 K. The solid solutions of the compositions of x=0.00, 0.50 and 0.66 have shown a thermal hysteresis and the thermoremanent magnetization gap decreases with increasing x value in the above systems. However the compositions of x=1.00 and 1.34 do not show the hysteresis. The exchange integral is calculated from Fe3+ ion occupancy ratio. The integral decreases with x value and thus the magnetic transition temperature decreases with the increasing x value.

• 한국자기학회지
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• 제24권3호
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• pp.76-80
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• 2014

토로이드 형태의 자성분말합금 코어의 경우 major B-H loop을 측정하기 위해서는 수십 kA/m 이상의 높은 자화력을 인가하여야 한다. 이 경우 측정과정에서 일차코일에 권선된 에나멜 동선에서 발생하는 열 때문에 측정이 매우 어렵다. 본 연구에서는 토로이드 형태의 자성분말합금 코어 major B-H loop을 직접 측정할 수 있는 장치를 설계 제작하고, 그 성능을 측정하였다. 수십 kA/m 이상의 자화력을 인가하기 위하여 최대 전류가 $100A_P$인 전력 증폭기와 측정 시간 중에 높은 전류에 의하여 코일 권선에서 발생하는 열 문제를 해결하기 위하여 실시간으로 자기 이력 곡선을 측정 할 수 있게 실시간으로 B-H 신호를 디지털신호로 변환하여 컴퓨터 소프트웨어에서 자속밀도 B 와 자화력 H 값을 계산하고, 이 값들로 부터 주요 자기 특성인 최대자속밀도 $B_{max}$, 최대 자화력 $H_{max}$, 보자력 $H_c$, 잔류자속밀도 $B_r$ 및 형상인자(FF)를 계산하여 가상계측기(VI)창으로 표시 할 수 있게 하였다. 제작된 장치를 이용하여 외경이 134 mm, 내경이 77 mm, 높이가 42 mm인 자성분말코어에 일차 코일을 직경이 1 mm인 에나멜 동선을 401회 권선하고 이차 코일을 직경이 0.2 mm인 에나멜 동선 5회 권선하여 측정을 하여 본 결과 최대 인가 자기장을 50 kA/m까지 인가하면서 자기이력곡선을 측정 할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• 한국주조공학회지
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• 제29권5호
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• pp.187-191
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• 2009

Microstructures and shape memory characteristics of $Ti_{50}Ni_{20}Cu_{30}$ alloy strips fabricated by arc melt overflow have been investigated by means of XRD, optical microscopy and DSC. The microstructure of as-cast strips exhibited columnar grains normal to the strip surface. X-ray diffraction analysis showed that one-step martensitic transformation of B2-B19 occurred in the alloy strips. According to the DSC analysis, it was known that the martensitic transformation temperature ($M_s$) of B2 $\rightarrow$ B19 in $Ti_{50}Ni_{20}Cu_{30}$ strip is $57^{\circ}C$. During thermal cyclic deformation with the applied stress of 60 MPa, transformation hysteresis and elongation associated with the B2-B19 transformation were observed to be $3.7^{\circ}C$ and 1.6%, respectively. The as-cast strip of $Ti_{50}Ni_{20}Cu_{30}$ alloy also showed a superelasticity and its stress hysteresis was as small as 14 MPa. These mechanical properties and shape memory characteristics of the alloy strips were ascribed to B2-B19 transformation and the controlled microstructures produced by rapid solidification of the arc melt overflow process.

• 설비공학논문집
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• 제23권7호
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• pp.498-504
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• 2011

As the electronic industry rapidly develops, the heat flux from state-of-the-art electronics increases up to $10^6\;W/m^2$. For this reason, the development of a new cooling technology for high heat flux applications is strongly required. Recently, some cooling technologies using boiling and condensation of working fluid are being adopted to overcome such a technical barrier. In the present study, a smooth boiling surface ($14{\times}14\;mm^2$) was immersed in FC-72 and its vapor was condensed by four different types of condensation surfaces ($30{\times}30\;mm^2$ base). The condensing surfaces were composed of a smooth surface and $1{\times}1\;mm^2$ pin-finned surfaces of 2 mm height with 0.3, 0.5 and 1 mm array spacing. Boiling and condensing characteristics were investigated in detail on their combinations of boiling and condensing surfaces. For a smooth boiling surface the results obtained showed that the pin-finned condensing surface with 1 mm array spacing yielded the best performance and the smooth condensation surface did the worst. Furthermore hysteresis phenomena could be reduced by using enhanced condensing surfaces.