• Title/Summary/Keyword: Thermal Diffusion

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IMPLEMENTATION OF A SECOND-ORDER INTERPOLATION SCHEME FOR THE CONVECTIVE TERMS OF A SEMI-IMPLICIT TWO-PHASE FLOW ANALYSIS SOLVER (물-기체 2상 유동 해석을 위한 Semi-Implicit 방법의 대류항에 대한 이차정확도 확장)

  • Cho, H.K.;Lee, H.D.;Park, I.K.;Jeong, J.J.
    • 한국전산유체공학회:학술대회논문집
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    • 2009.04a
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    • pp.290-297
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    • 2009
  • A two-phase (gas and liquid) flow analysis solver, named CUPID, has been developed for a realistic simulation of transient two-phase flows in light water nuclear reactor components. In the CUPID solver, a two-fluid three-field model is adopted and the governing equations are solved on unstructured grids for flow analyses in complicated geometries. For the numerical solution scheme, the semi-implicit method of the RELAP5 code, which has been proved to be very stable and accurate for most practical applications of nuclear thermal hydraulics, was used with some modifications for an application to unstructured non-staggered grids. This paper is concerned with the effects of interpolation schemes on the simulation of two-phase flows. In order to stabilize a numerical solution and assure a high numerical accuracy, the second-order upwind scheme is implemented into the CUPID code in the present paper. Some numerical tests have been performed with the implemented scheme and the comparison results between the second-order and first-order upwind schemes are introduced in the present paper. The comparison results among the two interpolation schemes and either the exact solutions or the mesh convergence studies showed the reduced numerical diffusion with the second order scheme.

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Effects of 3rd Element Additions on the Oxidation Resistance of TiAi Intermetallics (합금원소 첨가가 TiAI계의 내산화성에 미치는 영향)

  • Kim, Bong-Gu;Hwang, Seong-Sik;Yang, Myeong-Seung;Kim, Gil-Mu;Kim, Jong-Jip
    • Korean Journal of Materials Research
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    • v.4 no.6
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    • pp.669-680
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    • 1994
  • Oxidation behaviour of TiAl intermetallic compounds with the addition of Cr, V, Si, Mo, or Nb was investigated at 900~$1100^{\circ}C$ under the atmospheric environment. The reaction products were examined by XRD, SEM equipped with WDX. The weight gain by continuous oxidation increased with the addition of Cr or V, but there was less weight gain when Mo, Si or Nb was added individually. he oxidation rate of Cr- or V-added TiAl was always larger than that of TiAI. However, oxidation rate of Si-, Mo- or Nb-added TiAl was almost same or smaller than that of TiAI. Thus, it is concluded that the addition of Cr or V did not improve the oxidation resistance, whereas the addition of Si, Mo or Nb improved the oxidation resistance. Oxides formed on TiAl with Mo, Si, and Nb were found to be more protective, resulting from the decrease in diffusion rate of the alloying elements and oxygen. Nb strengthened the tendency to form $AI_{2}O_{3}$ in the early stage of oxidation, due to the continuous $AI_{2}O_{3}$ layer formation and dense $Tio_{2}+AI_{2}O_{3}$ layer. According to the Pt-marker test of TiAI- 5wt%Nb, oxygen diffused mainly inward while oxides were formed on the substrate surface. Upon thermal cyclic oxidation at $900^{\circ}C$, it is shown that the addition of Cr or Nb improved the adherence of oxide scale to the substrate.

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Dielectric Properties of $Ta_2O_{5-X}$ Thin Films with Buffer Layers

  • Kim, In-Sung;Song, Jae-Sung;Yun, Mun-Soo;Park, Chung-Hoo
    • KIEE International Transactions on Electrophysics and Applications
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    • v.12C no.4
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    • pp.208-213
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    • 2002
  • The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23~39) and high leakage current density(10$^{-3}$ ~10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (~15) and tow leakage current density(10$^{-9}$ ~10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

Schottky Contact Application을 위한 Yb Germanides 형성 및 특성에 관한 연구

  • Na, Se-Gwon;Gang, Jun-Gu;Choe, Ju-Yun;Lee, Seok-Hui;Kim, Hyeong-Seop;Lee, Hu-Jeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.399-399
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    • 2013
  • Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

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Cesium Release Behavior during the Thermal Treatment of High Bum-up Spent PWR Fuel (고연소도 경수로 사용후핵연료의 열처리에 따른 세슘 방출거동)

  • Park, Geun-Il;Cho, Kwang-Hun;Lee, Jung-Won;Park, Jang-Jin;Yang, Myung-Seung;Song, Kee-Chan
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.5 no.1
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    • pp.53-64
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    • 2007
  • The dynamic release behavior of Cs from high burn-up spent PWR fuel was experimentally performed under the conditions of a thermal treatment process such as voloxidation and sintering conditions. In voloxidation process, influence of the oxidation and reduction atmosphere on the Cs release characteristic using fragment type of spent fuel heated up to $1,500^{\circ}C$ was compared. In sintering process, temperature history effect on Cs release behavior was evaluated using green pellet under 4% $H_2/Ar$ environment. Temperature range for complete Cs release from spent fuel fragment under voloxidation condition was about $800^{\circ}C{\sim}1,200^{\circ}C$, but that of green pellet under the reduction atmosphere was $1,100^{\circ}C{\sim}1,400^{\circ}C$. Key parameters on Cs release behavior from spent fuel was powder formation as well as the diffusion rate of Cs compound to grain boundary and fuel surface.

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Comparative Study of Char Burn-Out and NOx Emissions in O2/N2 and O2/CO2 environments (순산소 분위기에서 촤 연소 및 질소산화물 배기특성 비교)

  • Lee, Chun-Sung;Kim, Seong-Gon;Lee, Byoung-Hwa;Chang, Young-June;Jeon, Chung-Hwan;Song, Ju-Hun
    • Journal of Energy Engineering
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    • v.20 no.3
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    • pp.191-199
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    • 2011
  • The char burn-out and NOx emissions from sub-bituminous coal were investigated in drop tube furnace under $O_2/N_2$ and $O_2/CO_2$ environments with different $O_2$ concentrations of 12, 21 and 31%. Results show that the char burn-out rate is faster as $O_2$ concentration increases higher and char burn-out rate under $O_2/CO_2$ decreases due to the lower oxygen diffusion into coal surface through the $CO_2$ rich boundary layer. NO concentration increases with increasing $O_2$ concentration, but declines at $O_2$ concentration of 31%. Meanwhile, NO emission indexes decreases monotonically with increasing $O_2$ concentration, which indicates that more NO reduction occurs with higher $O_2$ concentration probably due to greater HCN formation. For all conditions of $O_2$ concentration, the NO concentration under $O_2/N_2$ maintains higher than those of $O_2/CO_2$ due to presence of thermal NO.

Preparation of the SiO2 Films with Low-Dit by Low Temperature Oxidation Process (저온 산화공정에 의해 낮은 Dit를 갖는 실리콘 산화막의 제조)

  • Jeon, Bup-Ju;Jung, Il-Hyun
    • Applied Chemistry for Engineering
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    • v.9 no.7
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    • pp.990-997
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    • 1998
  • In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.

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Effects of Alkaline Additives on CO2 Removal by Li2ZrO3 (Li2ZrO3로 CO2 제거시 알칼리 첨가제 효과)

  • Park, Joo-Won;Kang, Dong-Hwan;Jo, Young-Do;Yoo, Kyung-Seun;Lee, Jae-Goo;Kim, Jae-Ho;Han, Choon
    • Korean Chemical Engineering Research
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    • v.44 no.5
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    • pp.535-539
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    • 2006
  • Effects of alkaline additives on the $CO_2$ removal reaction have been investigated by a thermogravimetric analyzer. $Li_2ZrO_3$ was synthesized by soild reaction of $ZrO_2$ with $Li_2CO_3$ and then alkali chemicals were added to the synthesized $Li_2ZrO_3$ and then heat treatment was carried out. Addition of alkali chemicals enhanced the reactivity of $Li_2ZrO_3$ with the following order; $K_2CO_3>NaCl>LiCl>Na_2CO_3$, which were resulted from the formation of partially melted $Li_2CO_3$. SEM photographs showed the presence of melted state and the XRD results showed that the chemical states of added salts were not changed. Addition of NaCl caused the induction time of about 60 min at the initial reaction stage and the addition of $Na_2CO_3$ inhibited the decomposition of $Li_2CO_3$ at about $700{\sim}750^{\circ}C$.

(U-Th)/He Dating on Martian Meteorites: Reviews and Perspectives (화성운석에 대한(U-Th)/He 연령 측정: 기존 연구 및 전망)

  • Min, Kyoung-Won;Lee, Seung-Ryeol
    • The Journal of the Petrological Society of Korea
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    • v.19 no.4
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    • pp.255-267
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    • 2010
  • The primary utilization of recently improved (U-Th)/He thermochronometry is to reveal the low-T thermal histories of shallow crustal sections or transient episodes (such as wildfires or meteorite impacts) because of the high sensitivity of He diffusion to temperature in host minerals. In this contribution, we present reviews and perspectives regarding how this method can be used to characterize the ejection-related shock metamorphism of Martian meteorites. The temperature conditions of shock metamorphism can be constrained through shock recovery experiments, paleomagnetism, and $^{40}Ar/^{39}Ar$ and (U-Th)/He dating. The most reliable constraints can be deduced when these independent approaches are combined. However, the thermal history of the ALH84001 Martian meteorite has been under serious debate because the different methods have yielded contrasting results. Recent work has shown how single-grain (U-Th)/He and $^{40}Ar/^{39}Ar$ dating, two noble-gas based thermochronometries with different T sensitivities, can be used to resolve this issue, providing a good example for future research on other meteorites.

Effect of Containing Promoter on SCR Catalysts (SCR 촉매에 포함된 조촉매 영향)

  • Seo, Choong-Kil
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.9
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    • pp.474-481
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    • 2018
  • The policy-making and technological development of eco-friendly automobiles designed to increase their supply is ongoing, but the internal combustion engine still accounts for approximately 95% of automobiles in use. To meet the stricter emission regulations of internal combustion engines based on fossil fuels, the proportion of after-treatments for vehicles and (ocean going) vessels is increasing continuously. As diesel engines have high power and good fuel economy in addition to less CO2 emissions, their market share is increasing not only in commercial vehicles, but also in passenger cars. Because of the characteristics of the diesel combustion, however, NOx is generated in localized high-temperature combustion regions, and particulates are formed in the zones of diffusion combustion. LNT and urea-SCR catalysts have been developed for the after-treatment of exhaust gas to reduce NOx in diesel vehicles. This study examined the effect of a containing promoter on SCR catalysts to cope with the severe exhaust gas regulation. The de-NOx performance of the Mn-SCR catalyst was the best, and the de-NOx performance was improved as the ion exchange rate between Mn ion and Zeolyst was good and the activation energy was low. The de-NOx performance of the 7Cu-15Ba/78Zeoyst catalyst was 32% at $200^{\circ}C$ and 30% at $500^{\circ}C$, and showed the highest performance. The NOx storage material of BaO loaded as a promoter was well dispersed in the Cu-SCR catalyst and the additional de-NOx performance of BaO was affected by the reduction reaction of the Cu-SCR catalyst. Among the three catalysts, the 7Cu-15Ba/Zeolyst SCR catalyst was resistant to thermal degradation. The same type of CuO due to thermal degradation migrates and agglomerates because BaO reduces the agglomeration of the main catalyst CuO particles.