• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• Journal of the Korean Applied Science and Technology
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• v.34 no.1
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• pp.66-82
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• 2017

Organosilicone-based surfactants consist of hydrophobic organosilicone groups coupled to hydrophilic polar groups. Organosilicone surfactants have been widely used in many industrial fields starting from polyurethane foam to construction materials, cosmetics, paints & inks, agrochemicals, etc., because of their low surface tension, lubricity, spreading, water repellency and thermal and chemical stability, resulted from the unique properties of organosilicone. Especially, trisiloxane surfactants, having low molecular weight organosilicone as hydrophobe, exhibit low surface tension and excellent wettability and spreadability, leading to their applications as super wetter/super spreader, but have the disadvantage of vulnerability to hydrolysis. A variety of trisiloxane surfactant structures are required to provide the functional improvement and the defect resolution for reflecting the necessities in the various applications. This review covers the synthetic schemes of reactive trisiloxanes as hydrophobic siloxane backbones, the main reaction schemes, such as hydrosilylation reaction, for coupling reactive trisiloxanes to hydrophilic groups, and the synthetic schemes of the main trisiloxane surfactants including polyether-, carbohydrate-, gemini-, bolaform-, double trisiloxane-type surfactants.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.311-311
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• 2016

최근 고성능 디스플레이 개발이 요구되면서 기존 비정질 실리콘(a-Si)을 대체할 산화물 반도체에 대한 연구 관심이 급증하고 있다. 여러 종류의 산화물 반도체 중 a-IGZO (amorphous indium-gallium-zinc oxide)가 높은 전계효과 이동도, 저온 공정, 넓은 밴드갭으로 인한 투명성 등의 장점을 가지며 가장 연구가 활발하게 보고되고 있다. 기존에는 SG(단일 게이트) TFT가 주로 제작 되었지만 본 연구에서는 DG(이중 게이트) 구조를 적용하여 고성능의 a-IGZO 기반 박막 트랜지스터(TFT)를 구현하였다. SG mode에서는 하나의 게이트가 채널 전체 영역을 제어하지만, double gate mode에서는 상, 하부 두 개의 게이트가 동시에 채널 영역을 제어하기 때문에 채널층의 형성이 빠르게 이루어지고, 이는 TFT 스위칭 속도를 향상시킨다. 또한, 상호 모듈레이션 효과로 인해 S.S(subthreshold swing)값이 낮아질 뿐만 아니라, 상(TG), 하부 게이트(BG) 절연막의 계면 산란 현상이 줄어들기 때문에 이동도가 향상되고 누설전류 감소 및 안정성이 향상되는 효과를 얻을 수 있다. Dual gate mode로 동작을 시키면, TG(BG)에는 일정한 positive(or negative)전압을 인가하면서 BG(TG)에 전압을 가해주게 된다. 이 때, 소자의 채널층은 depletion(or enhancement) mode로 동작하여 다른 전기적인 특성에는 영향을 미치지 않으면서 문턱 전압을 쉽게 조절 할 수 있는 장점도 있다. 제작된 소자는 p-type bulk silicon 위에 thermal SiO2 산화막이 100 nm 형성된 기판을 사용하였다. 표준 RCA 클리닝을 진행한 후 BG 형성을 위해 150 nm 두께의 ITO를 증착하고, BG 절연막으로 두께의 SiO2를 300 nm 증착하였다. 이 후, 채널층 형성을 위하여 50 nm 두께의 a-IGZO를 증착하였고, 소스/드레인(S/D) 전극은 BG와 동일한 조건으로 ITO 100 nm를 증착하였다. TG 절연막은 BG 절연막과 동일한 조건에서 SiO2를 50 nm 증착하였다. TG는 S/D 증착 조건과 동일한 조건에서, 150 nm 두께로 증착 하였다. 전극 물질과, 절연막 물질은 모두 RF magnetron sputter를 이용하여 증착되었고, 또한 모든 patterning 과정은 표준 photolithography, wet etching, lift-off 공정을 통하여 이루어졌다. 후속 열처리 공정으로 퍼니스에서 질소 가스 분위기, $300^{\circ}C$ 온도에서 30 분 동안 진행하였다. 결과적으로 $9.06cm2/V{\cdot}s$, 255.7 mV/dec, $1.8{\times}106$의 전계효과 이동도, S.S, on-off ratio값을 갖는 SG와 비교하여 double gate mode에서는 $51.3cm2/V{\cdot}s$, 110.7 mV/dec, $3.2{\times}108$의 값을 나타내며 훌륭한 전기적 특성을 보였고, dual gate mode에서는 약 5.22의 coupling ratio를 나타내었다. 따라서 산화물 반도체 a-IGZO TFT의 이중게이트 구조는 우수한 전기적 특성을 나타내며 차세대 디스플레이 시장에서 훌륭한 역할을 할 것으로 기대된다.

• Journal of the Korean Applied Science and Technology
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• v.34 no.3
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• pp.461-477
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• 2017

Organosilicone-based surfactants, consisting of hydrophobic organosilicone groups coupled to hydrophilic polar groups, have been widely used in many industrial fields starting from polyurethane foam to construction materials, cosmetics, paints & inks, agrochemicals, etc., because of their low surface tension, lubricity, spreading, water repellency and thermal and chemical stability, resulted from the unique properties of organosilicone. Especially, organosiloxane surfactants, having low molecular weight siloxane as hydrophobe, exhibit low surface tension and excellent wettability and spreadability, leading to their applications as super wetter/super spreader, but have the disadvantage of vulnerability to hydrolysis. A variety of low molecular weight siloxane surfactant structures are required to provide the functional improvement and the defect resolution for reflecting the necessities in the various applications. This review includes the synthetic schemes of reactive tetrasiloxanes and disiloxanes as hydrophobic siloxane backbones, the main reaction schemes, such as hydrosilylation reaction, for coupling reactive tetrasiloxanes or disiloxanes to hydrophilic groups, and the main synthetic schemes of the tetra- and di-siloxane surfactants having polyether-, carbohydrate-, gemini-, bola-type surfactant structures.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.95-98
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• 2007

In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.220-226
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• 1997

An optical intensity-type pressure sensor has been fabricated by coupling multimode optical fiber with 100 nm-Au/30 nm-NiCr/150 nm-$Si_3N_4/300 nm-SiO_2/150 nm-Si_3N_4$ optical reflection layer supported by micromachined frame-shape silicon substrate, and its characteristics was investigated. For the application of $Si_3N_4/SiO_2/Si_3N_4$ diaphragm to the optical reflection layer of the sensor, NiCr and Au films were deposited on the backside of the diaphragm by thermal evaporation , respectively, and thus optical low caused by transmission in the reflection layer could be decreased to a few percents. Dielectric diaphragms with uniform thickness were able to be also reproduced because top- and bottom-$Si_3N_4$ layer of the diaphragm could automatically stop silicon anisotropic etching. The respective pressure ranges in which the sensor showed linear optical output power-pressure characteristics were 0~126.64 kPa, 0~79. 98 kPa, and 0~46.66 kPa, and the respective pressure sensitivities of the sensor were about 20.69 nW/kPa, 26.70 nW/kPa, and 39.33 nW/kPa, for the diaphragm sizes of 3$\times$3 $\textrm{mm}^2$, 4$\times$4 $\textrm{mm}^2$, and 5$\times$5 $\textrm{mm}^2$, indicating that the sensitivity increases as diaphragm size increases.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.22-25
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• 2007

In this research, magnetic properties of spin valve structures using IrMn layers as antiferromagnetic were studied depending on the thickness of the pinned layer. The spin valve structure was Si substrate/$SiO_2(2,000\;{\AA})/Mo(17\;{\AA})NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(t\;{\AA})/Ta(25\;{\AA})$. Also, Mo film was deposited on Si substrates and the thermal annealing effect was analyzed. The resistivity of the Mo film was increased as an annealing temperature was increased up to $600^{\circ}C$. The variations of MR ratio were related with magnetic exchange coupling field of the spin valve structures for various IrMn pinned layer thickness up to 130 ${\AA}$. MR ratio and $H_{ex}$ of spin valves was about 9.05% and 277.5 Oe when the thickness of the IrMn pinned layer was $32.5\;{\AA}(t=32.5\;{\AA})$. It was increased to 9.65% and 337.5 Oe for $t=65\;{\AA}$. For $t=97.5\;{\AA}$, the MR ratio and Hex decreased to 8.2% and 285 Oe, and further decrease was observed up to $t=130\;{\AA}$.

• Polymer(Korea)
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• v.24 no.3
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• pp.389-398
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• 2000

Transparent, abrasion resistant coatings with 4~13 ${\mu}{\textrm}{m}$ thickness were prepared by spin-coating on polycarbonates with organic/inorganic hybrid solutions, followed by UV curing and heat treatment at 12$0^{\circ}C$ for 12 hours. The coating solutions were composed of inorganic phase and organic phase in 0:100, 20:80, 30:70, 50:50, 80:20 wt% ratios, respectively, mixed with photoinitiator, senaitizer and surfactant. The inorganic phase was formed by sol-gel reaction of TEOS and silane coupling agent MPTMS in 1 : 2 or 2 : 1 molar ratios, the organic phase consisted of difunctional urethane acrylate oligomeric resin, multifunctional acrylate TMPTA and HDDA in 4 : 3 : 3 wt% ratio. The coating systems were investigated by FT-IR, $^{29}$ Si-NMR spectra. In addition, TGA/DSC for thermal analysis and SEM, AFM observation for coated surface were examined. Gererally, the homogeneity of phases, the surface smoothness of coating and abrasion resistance were improved with the higher content of inorganic component. Namely, coating system with below 10 $\AA$ surface roughness and T$_{g}$ of 15$0^{\circ}C$ showed only 10% decrease in light transmittance after abrasion test, whereas uncoated polycarbonate substrate exhibited 46% decrease..

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.240-244
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• 2006

In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

• Journal of the Korean Society of Marine Environment & Safety
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• v.26 no.7
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• pp.915-921
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• 2020

Thermoacoustic instability caused by air conditioning in a combustion chamber has emerged as a problem that must be solved to establish a stable combustion system. Thermoacoustic instability is largely divided into primary and secondary acoustic instability. In this study, an experimental study of the effects of heat losses was conducted to investigate the mechanism of secondary acoustic instability. To generate the secondary acoustic instability, a quarter-wavelength resonator with one open end and one closed end was used, and the inside of the resonator was filled with premixed gases. Subsequently, secondary acoustic instability with downward-propagating flames could be realized via thermal expansion on the burnt side. To control heat losses qualitatively, an additional co-axial tube was installed in the resonator with air or nitrogen supply. Therefore, additional diffusion flames can be formed at the top of the resonator depending on the injection of the oxidizer into the co-axial tube when rich premixed flames are used. Consequently, secondary acoustic instability could not be achieved by increasing heat losses to the ambient when the additional diffusion flame was not formed, and the opposite result was obtained with the additional diffusion flame.