• Bulletin of the Korean Chemical Society
• /
• 제25권5호
• /
• pp.617-619
• /
• 2004

As an pretreatment, a Fe$(NO_3)_3{\cdot}9H_2O-Al(OH)_3$mixture was ground by a high energy mill and used as a supported catalyst for the growth of carbon nanotubes by a thermal CVD. The crystal structure of the catalyst disordered by the grinding influenced significantly the synthesis of carbon nanotubes in a thermal CVD.

• 반도체디스플레이기술학회지
• /
• 제3권3호
• /
• pp.45-50
• /
• 2004

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.

• 한국정보전자통신기술학회논문지
• /
• 제12권3호
• /
• pp.218-223
• /
• 2019

높은 CVD 그래핀저항으로 인한 낮은 발열효과를 해결하기 위해 다층으로 그래핀을 적층하여, 저저항의 광학특성이 우수한 투명 면상 발열시스템을 구현하였다. 제작한 CVD 그래핀의 발열필름으로 $300{\times}400{\times}5mm$ 발열체를 제작하고, 효율적인 전력을 구동하기 위해 PWM 제어를 통한 회로를 구성하여 시스템을 구현하였다. 발열체로 사용한 4층의 CVD 그래핀 필름의 평균 면 저항 측정값은 $85.5{\Omega}/sq$이다. 따라서 저 저항의 CVD 그래핀의 구현 방법으로 열전사의 적층의 방법은 타당하다. 발열시험 결과, CVD 그래핀을 이용한 저저항 투명 면상 발열 시스템의 평균 발열상승은 $10^{\circ}C/min$ 이고, 86.44%의 CVD 그래핀 필름의 광투과율을 갖음을 보여준다. 따라서 제시한 발열 시스템은 대형창 유리 및 자동차 발열유리로서 적용가능하다.

• 한국진공학회지
• /
• 제4권S1호
• /
• pp.40-68
• /
• 1995

As silicon divice geometrics become smaller and aspect ratios larger, processing technoloty is moving from PVD into the area of CVD and OMCVD. Many new source materials are in the research and development stage, and have placed challenging demands on materials delivery technology. This paper will describe the many successes achieved with various delivery methods including thermal, bubblers, pressure-based and Direct Liquid Injection.

• 대한기계학회논문집B
• /
• 제20권5호
• /
• pp.1679-1688
• /
• 1996

Laser flash technique was applied to measure thermal properties of FGM made by a CVD method. System stability and reproducibility of this measuring system were proved and calibrated with glassy carbon used as reference material. Specimens was prepared by cutting FGM diagonally. Measurements were performed for a wide range of temperatures up to 1500K. Relative heat capacity of the FGM specimen was scattered with in $\pm$13% at room temperature and at high temperature above 1200K, and $\pm$3% at medium temperature range. On the other hand, thermal diffusivity data showed excellent reproducibility and stability through the whole temperature range. In conclusion, the multi-target radiometer can be applied to measure the thermal properties of non homogeneous materials like FGM.

• 한국세라믹학회지
• /
• 제32권9호
• /
• pp.1003-1008
• /
• 1995

CVD-Si3N4/CVD-SiC/pack-SiC/pyro-carbon/(3-D C/C composite) multilayer coating was performed to improve the oxdiation resistance and erosion resistance properteis of the 3-D carbon/carbon composite, and the plasma test was performed to measure the oxidation resistance and erosion resistance properties. The thicknesses of each film layer were about 10${\mu}{\textrm}{m}$ for pack-SiC, 5${\mu}{\textrm}{m}$ for CVD-SiC and 40${\mu}{\textrm}{m}$ for CVD-Si3N4. When the multilayer coated specimen was exposed to the plasma flame with temperature of 500$0^{\circ}C$ for 20 seconds, it showed the weight loss five times less than that of the only pyro-carbon coated specimen.

• 한국결정학회:학술대회논문집
• /
• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
• /
• pp.20-20
• /
• 2002

Based on experimental and theoretical analyses, we suggested a new possibility that the CVD diamond films grow not by the atomic unit but by the charged clusters containing a few hundreds of carbon atoms, which form spontaneously in the gas phase [J. Crysta] Growth 62 (1996) 55]. These hypothetical negatively-charged clusters were experimentally confirmed under a typical hot-filament diamond CVD process. Thin film growth by charged clusters or gas phase colloids of a few nanometers was also confirmed in Si and ZrO₂ CVD and appears to be general in many other CVD processes. Many puzzling phenomena in the CVD process such as selective deposition and nanowire growth could be explained by the deposition behavior of charged clusters. Charged clusters were shown to generate and contribute at least partially to the film deposition by thermal evaporation. Origin of charging at the relatively low temperature was explained by the surface ionization described by Saha-Langmuir equation. The hot surface with a high work function favors positive charging of clusters while that of a low work function favors negative charging.

• 한국세라믹학회지
• /
• 제35권11호
• /
• pp.1233-1239
• /
• 1998

Gas phase compositions of the hot filament-assisted diamond CVD reaction were analyzed by on-line quadrupole mass analysis(QMA) technique. D2 isotope experiments showed that methance molecules were decomposed into atomic state and then recombined in to acetylene during transport the probe line. Although acetylene or ethylene was supplied instead of methane similar gas compositions were obtained when filament temperature was above 1500$^{\circ}C$ Therefore this system could be assumed near thermal equilibrium state. Filament temperature and reaction pressure variation experiments exhibited the same tendency between acetylene concentration and diamond growth rate and these results implied that acetylene molecule played the role of the reactive species in the diamond CVD reaction.

• 전자공학회논문지A
• /
• 제31A권5호
• /
• pp.94-100
• /
• 1994

The junction failure mechanism of W plugs has not been fully understood while the selective W deposition has been widely used for plugging interconnection lines. In this paper, the thermal stability and junction failure mechanism of sub-micron contacts using selective CVD-W plugs were intensively studied with the metal lines of AISiCu, Ti/AISiCu and TiN/AISiCu. The experimental results showed that the contact chain resistance and leakage current in the AISiCu and Ti/AISiCu metallizations were significantly degraded after annealing. From the SEM analysis, it was found that the junction spiking, due to the Al atoms diffusion along the porous interface between selective CVD-W and contactside wall, caused the junction failure. In constast, there was no degradation of the contact resistance and junction leakage current in TiN/AISiCu metal structu-re. It is believed that the TiN barrier layer could prevent AI(Ti) atoms Fromdiffusing. Therefore, TiN barrier between W plug and Al should be used to impro-ve the thermal stability of sub-micron contacts using the selective CVD-W plugs.

• 한국전기전자재료학회논문지
• /
• 제16권5호
• /
• pp.441-447
• /
• 2003

When a SnO$_2$ thin film was deposited by thermal CVD, two different types of growth behavior that were dependent on the deposition temperature were observed. The film grown at 475$^{\circ}C$ had a wide grain size distribution and a faceted surface shape. On the other hand, the film grown at 5$25^{\circ}C$ had a relatively narrow grain size distribution and a rounded sulfate shape. The aspects of grain shape and growth behavior agree well with the theory of gram growth and a roughening transition. The charge tarrier density decreased with deposition time. According to photoluminescence measurements, the peak intensity of the spectra occurred at approximately 2.5 eV, which is related to oxygen vacancies, and decreased with increasing of deposition time. These measurement results suggest that the number of oxygen vacancies, which is related to the electrical conductivity, decrease with deposition time.