• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.294-298
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• 2004

Carbon nanotubes(CNTs) were synthesized by thermal chemical vapor deposition(CVD) method. To fabricate CNT gas sensor, catalyst metal layer was deposited on microstructure. The CNT gas detecting layer was grown by thermal CVD method on the catalyst metal layer. In order to investigate the gas sensing characteristics of the fabricated CNT gas sensor, it was exposed in NO$_2$ gas and sensitivity, response, and recovery time were measured. As the result, this sensor has better reproductibility and faster recovery time than another CNT gas sensors.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.760-763
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• 2007

The properties of carbon nanotube obtained by thermal chemical vapor deposition (CVD) process were investigated as a function of ammonia $(NH_3)$ gas in hydrocarbon gas, Fe catalyst thickness, and growth temperature. Fe catalyst was prepared by DC magnetron sputter and pre-treated with ammonia gas. CNTs were then grown with ammonia-acetylene gas mixture by thermal CVD. The diameter of these CNTs shows a strong correlation with the gas rate, the catalyst film thickness and temperature. From our results, it was found that the factors of grown CNTs positively acted to improve CNT quality.

• 열처리공학회지
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• 제34권2호
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• pp.75-80
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• 2021

The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.

• The Korean Journal of Ceramics
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• 제2권4호
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• pp.177-180
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• 1996

Considerable progress in the development of CVD techniques for the deposition of diamond films has been achieved recently. Despite the polycrystalline structure of this material, its physical properties are now approaching those of natural type IIa diamond crystals. This paper will given some insight into the current status of CVD diamond thechnology with emphasis on optical and thermal applications. The role of process gas impurities like nitrogen will be discussed.

• 한국결정성장학회지
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• 제9권2호
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• pp.240-244
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• 1999

화학기상증착법(CVD)을 사용하여 graphite 기판 위에 단층의 SiC와 SiC/C 경사기능층을 증착시켰다. 먼저 상업적인 전산 구조 해석 프로그램을 사용하여 열충격하에 있는 재료층 내부의 온도 분포 및 열응력 분포를 계산하였고, 계산에 의해 설계, 제작된 경사기능층 시편들의 열특성을 조사하였다. 열충격 시험결과, 경사기능층 시편들이 계면에서 매우 효율적인 열응력 이완특성을 나타내는 것을 알 수 있었고, $\Delta$T=1600K의 열충격에도 변형이 없음을 알 수 있었다.

• 한국재료학회지
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• 제3권1호
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• pp.12-18
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• 1993

단결정 실리콘위에 스퍼터법으로 증착된 티타니움막을 급속가열로에서 고상반응에 의해 형성시킨 면저항 1.2 ohm/sq. 내외의 TiS$i_2$ 박막에 있어서 열안정성을 상부절연막의 유무 및 종류에 따라 조사하였다. 상부절연막은 상압 CVD로 증착한 USG(Undoped Silicate Glass, Si$i_2$) 막과 플라즈마 CVD법으로 증착한 PE-SiN(S$i_3$$N_4$)막을 사용했다. 열안정성 평가는 90$0^{\circ}C$에서 시간을 달리하여 TiS$i_2$막, PE-SiN막, USG막의 스트레스는 각각 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$의 인장응력을 나타내었다. 응집현상은 TiS$i_2$의 응집현상은 Nabarro-Herring 마이크로 크리프에 의한 원자의 확산관점에서 검토되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.378-379
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• 2006

The carbon thin film was developed by the CVD method using the carbon source of toluene with the stream of argon gas at $800{\sim}1100^{\circ}C$ for 1 hour. Developed carbon thin films have the material loading of 0.27 mg($800^{\circ}C$), 0.80 mg($900^{\circ}C$), 2.3 mg($1000^{\circ}C$), and 2.9 mg($1100^{\circ}C$) for the disk of 15 mm diameter on single side. The characteristics of carbon thin film as the anode of thin film battery were evaluated using Li|C coin cell. Li|C($1100^{\circ}C$) coin cell has the first specific discharge and charge capacity of 953 mAh/g and 374 mAh/g, respectively, resulting the first Ah efficiency of 39.3 %. Capacity retention of the 5th cycle was 93.2 % indicating good cycleability. The carbon thin film prepared by CVD shows good specific capacity and cycleability, but low Ah efficiency.

• 한국결정성장학회지
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• 제8권4호
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• pp.612-618
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• 1998

$SiCl_4/C_3H_8/H_2$계를 사용하여 흑연기판 위에 순수한 SiC층과 SiC/C FGM층을 CVD법에 의해 증착한 후 thermal shock 시험을 통하여 두 시편의 열적 성질을 조사하였다. Thermal shock 시험시 두가지 시편 내부의 이론적인 열응력 차이를 알아보기 위해 상용프로그램을 이용하여 시편내의 온도분포, 열응력 분포를 계산하였다. SiC/C FGM층을 증착한 시편이 순수한 SiC층을 증착한 시편보다 계산상으로 경계면에서 우수한 열응력 완화효과를 나타내는 것으로 판단되었고 실험적으로로 FGM 시편의 경우 $\Delta$T=1600K의 열충격에도 견딜수 있는 것을 확인하여 이론과 실험이 일치하는 것을 입증하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.78-78
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• 2012

In this presentation I will review the expanding thermal plasma chemical vapour deposition (ETP-CVD) technology, a deposition technology capable of reaching ultrahigh deposition rates. High rate deposition of a-Si:H, ${\mu}c$-Si:H, a-SiNx:H and silicon nanocrystals will be discussed and their various applications, mainly for photovoltaic applications demonstrated. An important aspect over the years has been the fundamental investigation of the growth mechanism of these films. The various in situ (plasma) and thin film diagnostics, such as Langmuir probes, retarding field analyzer, (appearance potential) mass spectrometry and cavity ring absorption spectroscopy, spectroscopic ellipsometry to name a few, which were successfully applied to measure radical and ion density, their temperature and kinetic energy and their reactivity with the growth surface. The insights gained in the growth mechanism provided routes to novel applications of the ETP-CVD technology, such as the ultrahigh high growth rate of silicon nanorystals and surface passivation of c-Si surfaces.

• 한국진공학회지
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• 제4권S1호
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• pp.34-39
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• 1995

Various silicon films were prepared by thermal- and UV photo-CVD processes. The reactants were SiH4, Si2H6, SiH2F2, SIF4, and H2. Silicon films grown at temperatures below $500 ^{\circ}C$ were either amorphous or crystalline depending on the process conditions, and the growth rates ranged between 5 and $80\AA$min. Crystallinity of the film was improved even at $250^{\circ}C$ when the film was grown by photo-CVD using fluoro-silanes as the reactants. Analysis of the film by RBS, SIMS, XRD, and ex-situ IR indicated that substrate surface was contaminated by oxygen and other impurities when the reactants contained neither hydrogen nor fluoro-silnanes, but when fluoro-silanes were used as reactants the silicon film was highly crystalline.