• Korean Journal of Materials Research
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• v.34 no.6
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.94-101
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• 1998

To form 0.2 .mu.m p$^{+}$-n junctions, BF$_{2}$ ions with the energy of 20keV and the dose of 2*10$^{15}$ cm$^{-2}$ were implanted into the crystalline and preamorphized silicon substrates. Th epreamorphization was performed using 45keV, 3*10$^{14}$ cm$^{-2}$ As or Ge ions. Th efurnace annealing and rapid thermal annealing were empolyed to annihilate the implanted damage and to activate the implanted boron ions.The junction properties were analyzed with the measured values of the junction depth, sheet resistances, residual defects, and leakage currents. The thermal cycle of furnace annela followed by rapid thermal annela shows better characteristics than the annealing sequence of rapid thermal anneal and furnace annela.Among the premorphization species, Ge ion exhibited the better characteristics than the As ion.n.

• Journal of the Korean Ceramic Society
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• v.30 no.4
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• pp.332-338
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• 1993

TiN/Ti is the best buffer layer between PZT thin film and si substrate among the Ti, TiN, ZrN, TiN/Ti, ZrN/Ti. The amorphous PZT films deposited on TiN/Ti buffer layer directly transform into perovskite phase when rapid thermal annealed for 30sec above 55$0^{\circ}C$. As Rapid Thermal Annealing(RTA) temperature increased, the remanent polarization(Pr) and dielectric constant($\varepsilon$r) increased and then showed Pr=21 $\varepsilon$r=593 when rapid thermal annealed 80$0^{\circ}C$ for 30sec. On the contrary the leakage current increased with increasing RTA temperature due to the formation of void made by Pb evaporationand grain cohesion.

• Bulletin of the Korean Chemical Society
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• v.20 no.9
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• pp.1021-1025
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• 1999

Near-infrared (NIR) spectroscopy has been successfully utilized for the rapid identification of six typical petroleum products such as light straight-run (LSR), naphtha, kerosine, light gas oil (LGO), gasoline, and diesel. The spectral features of each product were reasonably differentiated in the NIR region, and the spectral differences provided enough qualitative spectral information for discrimination. For discrimination, principal component analysis (PCA) combined with Mahalanobis distance was used to identify each petroleum product from NIR spectra. The results showed that each product was accurately identified with an accuracy over 95%. Most noticeably, LSR, kerosine, gasoline, and diesel samples were predicted with identification accuracy of 99%. The overall results ensure that a portable NIR instrument combined with a multivariate qualitative discrimination method can be efficiently utilized for rapid and simple identification of petroleum products. This is especially important when local at-site measurements are necessary, such as accidental petroleum leakage and regulation of illegal product blending.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.542-545
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• 1987

THE ELECTRICAL CHARACTERISTICS Of RAPID THERMAL OXIDES AND NITRIDED OXIDES HAVE BEEN INVESTIGATED. R.T.OXIDE FILMS HAVE BEEN PREPARED BY ONLY R.T. OXIDATION OR R.T.OXIDATION AND SUBSEQUENT R.T.ANNEAL. NITRIDED OXIDE FILMS HAVE BEEN PREPARED BY R.T.OXIDATION AND SUBSEQUENT R.T.NITRIDATION.AND CONVENTIONAL OXIDES ALSO HAVE BEEN PREPARED TO COMPARE WITH R.T.P OXIDES. R.T.ANNEALED OXIDES SHOW EXCELLENT BREAKDOWN FIELD. LEAKAGE CURRENT AND TDDB CHARACTERISTICS. ALSO, CAPACITANCE Of R.T NITRIDED OXIDES ARE SUPERIOR BY 10% TO CONVENTIONAL OXIDES, BUT TDDB CHARACTERISTIC ARE POORER THAN OXIDE FILMS.

• Journal of the Korean Institute of Gas
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• v.12 no.2
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• pp.7-11
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• 2008

This paper presents the experimental results on the oil leakage characteristics of stem seals depending on the driving distance in LPG vehicle. The increased speeds of the camshaft and oil temperatures do not affect to the oil leakage of the seals because of the low level of driving distances less than 40,000 km. But the increased driving distance over 50,000 km to 100,000 km shows a rapid deteriorating the sealing performance, which may increase the oil leakage through the rubbing surfaces between the poppet valves and stem seals. In this result, the stem seal may be exchanged about the driving distance of 50,000 km to 60,000 km with a currently used stem seal in LPG car. Thus, the stem seal for a poppet valve should be resigned for the increased durability and long life.

• The Journal of the Convergence on Culture Technology
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• v.10 no.1
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• pp.551-557
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• 2024

Hydrogen is a renewable energy source with various characteristics such as clean, carbon-free and high-energy, and is internationally recognized as a "future energy". With the rapid development of the hydrogen energy industry, more hydrogen infrastructure is needed to meet the demand for hydrogen. However, hydrogen infrastructure accidents have been occurring frequently, hindering the development of the hydrogen industry. HyRAM+, developed by Sandia National Laboratories, is a software toolkit that integrates data and methods related to hydrogen safety assessments for various storage applications, including hydrogen refueling stations. HyRAM+'s physics mode simulates hydrogen leak results depending on the hydrogen refueling station components, graphing gas plume dispersion, jet frame temperature and trajectory, and radiative heat flux. In this paper, hydrogen leakage data was extracted from a hydrogen refueling station in Samcheok, Gangwon-do, using HyRAM+ software. A hydrogen leakage simulator was developed using data extracted from HyRAM+. It was implemented as a dashboard that shows the data generated by the simulator using a database and Grafana.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.318-322
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• 2005

Ti-capped NiSi contacts were formed on $p^+/n$ junctions to improve the leakage problem and then Cu was deposited without removing the Ti-capping layer in an attempt to utilize as a diffusion barrier. The electrical characteristics of these $p^+/n$ diodes with Cu/Ti/NiSi electrodes were measured as a function of drive-in RTA(rapid-thermal annealing) and silicidation temperature and time. When drive-in annealed at $900^{\circ}C$, 10 sec. and silicided at $500^{\circ}C$, 100 sec., the diodes showed the most excellent I-V characteristics. Especially, the leakage current was $10^{-10}A$, much lower than reported data for diodes with NiSi contacts. However, when the $p^+/n$ diodes with Cu/Ti/NiSi contacts were furnace-annealed at $400^{\circ}C$ for 40 min., the leakage current increased by 4 orders. The FESEM and AES analysis revealed that the Ti-capping layer effectively prohibited the Cu diffusion, but was ineffective against the NiSi dissociation and consequent Ni diffusion.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.867-871
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• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.