• Title/Summary/Keyword: The quantum transition line shapes (QTLS) and the quantum transition line widths (QTLW)

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The Magnetic Field Dependence of the Confinement Potential due to the Interaction of Electron and Piezoelectric Phonon in GaAs Semiconducting Materials (구속 포텐셜의 전자-압전 포논 상호 작용에 따른 GaAs의 자기장 의존 특성)

  • Lee, Su-Ho;Kim, Hai-Jai;Joo, Seok-Min
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.67 no.3
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    • pp.149-154
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    • 2018
  • We consider the system is subject to the linearly polarized oscillatory external field. We study the optical quantum transition Line shapes(QTLS) which show the absorption power and the quantum transition line widths(QTLW) of electron-piezoelectric phonon interacting system. We analyze the magnetic field dependence of the QTLS and the QTLW in various cases. In order to analysis the quantum transition, we compare the magnetic field dependence of the QTLW and the QTLS of two transition process, the intra-Landau level transition process and the inter-Landau level transition process.

The Magnetic Field Dependence Properties of Quasi Two Dimensional Electron-piezoelectric Potential Interacting System in GaN and ZnO

  • Lee, S.H.;Sug, J.Y.;Lee, J.H.;Lee, J.T.
    • Journal of Magnetics
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    • v.16 no.4
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    • pp.408-412
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    • 2011
  • We investigated theoretically the magnetic field dependence of the quantum optical transition of qusi 2-Dimensional Landau splitting system, in GaN and ZnO. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). Through the analysis of this work, we found the increasing properties of the optical Quantum Transition Line Shapes(QTLSs) which show the absorption power and the Quantum Transition Line Widths(QTLWs) with the magnetic-field in GaN and ZnO. We also found that QTLW, ${\gamma}(B)_{total}$ of GaN < ${\gamma}(B)_{total}$ of ZnO in the magnetic field region B < 25 Tesla.

Quantum Transition Properties of Quasi-Two Dimensional Si System in Electron Deformation Potential Phonon Interacting (전자 포텐셜 변형과 포논 상호작용에 의한 준 이차원 Si 구조의 전도 현상 해석)

  • Lee, Su-Ho;Kim, Young-Mun;Kim, Hai-Jai;Joo, Seok-Min
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.66 no.3
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    • pp.129-134
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    • 2017
  • We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process.