• Journal of the Korean Society of Safety
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• v.12 no.4
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• pp.79-85
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• 1997

In order to improve the surface characteristics of polymethylmethacrylate(PMMA), oxide thin film coatings were applied using the sol-gel dip-coating technique. The $Si(OC_2H_5)_4$, tetra-ethyl-ortho-silicate(TEOS) was used as a starting material for $SiO_2$ coating. The hardness of the alkoxy-derived oxide-coated PMMA was increased from 190 MPa for non-coated PMMA with increasing film thickness. By optimizing the heating conditions and the hydrolysis conditions, a maximum apparent hardness obtained In the present study was achieved 310 MPa using the withdrawal velocity of 5cm/min and heat treatment at $90^{\circ}C$ for 5 hours, which is about 1.6 times larger than that of uncoated PMMA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.113-114
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• 2005

Sufficient removal rate with adequate selectivity to realize the pattern mask of tetra-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained by chemical mechanical polishing (CMP) with commercial silica slurry as a function of pH variation. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.645-646
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• 2005

The increasing hydroxyl ($OH^-$) groups diffused into the TEOS and then weakened reactants such as H-C-O-Si bonds on the surface of TEOS film were actively generated with the increase of slurry temperature. These soft reactants on the surface of TEOS film could be removed easily by mechanical parts of CMP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.341-345
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• 2001

In this study, nano-sized powders of $Si0_2-0^{\sim}15mol%B_2O_3$ composition were prepared by sol-gel processing method using TEOS(Tetra ethyl ortho silicate) and $H_3BO_3$ solution. The powders were tape-cast on High silicate glass sheet(HSG) substrate and sintered to form a layer of undercladding for the planar light wave module, During the sol-gel processing, $H_2O/Si$ mole ratio were varied to modify the size of the powders in a range from 600 to 75nm. The dispersion of the powder was modified by changing the pH of the slurry. Sintering temperature of the tape was observed to decrease with the size of the powder and the $B_2O_3$ content in the powder. When the silica powders of 75-125nm in diameter containing 15mol% $B_2O_3$ were used, 98 TD% was obtained at $1250^{\circ}C$, which is approximately $300^{\circ}C$ reduction in sintering temperature compared with micrometer-sized powders.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.341-345
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• 2001

In this study, nano-sized powders of SiO$_2$-0∼15mo1%B$_2$O$_3$ composition were prepared by sol-gel processing method using TEOS(Tetra ethyl ortho silicate) and H$_3$BO$_3$ solution. The powders were tape-cast on High silicate glass sheet(HSG) substrate and sintered to form a layer of undercladding for the planar light wave module. During the sol-gel processing, H$_2$O/Si mole ratio were varied to modify the size of the powders in a range from 600 to 75nm. The dispersion of the powder was modified by changing the pH of the slurry. Sintering temperature of the tape was observed to decrease with the size of the powder and the B$_2$O$_3$ content in the powder. When the silica powders of 75∼125nm in diameter containing 15mo1% B$_2$O$_3$ were used, 98 TD% was obtained at 1250$^{\circ}C$, which is approximately 300$^{\circ}C$ reduction in sintering temperature compared with micrometer-sized powders.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.63-63
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• 2003

The nanotopography of silicon wafers has emerged as an important factor in the STI process since it affects the post-CMP thickness deviation (OTD) of dielectric films. Ceria slurry with surfactant is widely applied to STI-CMP as it offers high oxide-to-nitride removal selectivity. Aiming to control the nanotopography impact through ceria slurry characteristics, we examhed the effect of surfactant concentration and abrasive size on the nanotopography impact. The ceria slurries for this study were produced with cerium carbonate as the starting material. Four kinds of slurry with different size of abrasives were prepared through a mechanical treatment The averaged abrasive size for each slurry varied from 70 nm to 290 nm. An anionic organic surfactant was added with the concentration from 0 to 0.8 wt %. We prepared commercial 8 inch silicon wafers. Oxide Shu were deposited using the plasma-enhanced tetra-ethyl-ortho-silicate (PETEOS) method, The films on wafers were polished on a Strasbaugh 6EC. Film thickness before and after CMP was measured with a spectroscopic ellipsometer, ES4G (SOPRA). The nanotopogrphy height of the wafer was measured with an optical interferometer, NanoMapper (ADE Phase Shift)

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.04a
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• pp.146-150
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• 1996

A thermal micro actualtor has been fabricated using surface micromachining techniques. It consists of doped ploysilicon as a moving part and TEOS(Tetra Ethyl Ortho Silicate) as a sacrificial layer. The polysilicon was annealed for the reduction of residual stress which is the main cause to its deformation such as bending and buckling. And the newly developed HF VPE(vapor phase etching)process was also used as an effective release method for the elimination of sacrificaial layer. With noliquid involved during any of the steps for relasing, unlike other reported relase techniques, the HF VPE pocess has produced polysilicon microstructures with virtually no process-induced stiction problem. The actuation is incured by the thermal expasion due to current flow in active polysilicon cantilever, which motion is amplified bylever mechanism. The thickness of pllysilicon is 2 .mu. m and the length of active and passive polysilicon cantilever are 500 .mu. m, respectively. The moving distance of polysilicon actuator was experimentally conformed as large as 21 .mu. m at the input voltage level of 10 V and 50Hz square wave. These micro actuator technology can be utilized for the fabrication of MEMS (microlectromechanical system) such as microrelay, which requires large displacement or contact force but relatively slow response.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.545-545
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• 2008

Poly-Si is an essential material for floating gate in NAND Flash memory. To fabricate this material within region of floating gate, chemical mechanical polishing (CMP) is commonly used process for manufacturing NAND flash memory. We use colloidal silica abrasive with alkaline agent, polymeric additive and organic surfactant to obtain high Poly-Si to SiO2 film selectivity and reduce surface defect in Poly-Si CMP. We already studied about the effects of alkaline agent and polymeric additive. But the effect of organic surfactant in Poly-Si CMP is not clearly defined. So we will examine the function of organic surfactant in Poly-Si CMP with concentration separation test. We expect that surface roughness will be improved with the addition of organic surfactant as the case of wafering CMP. Poly-Si wafer are deposited by low pressure chemical vapor deposition (LPCVD) and oxide film are prepared by the method of plasma-enhanced tetra ethyl ortho silicate (PETEOS). The polishing test will be performed by a Strasbaugh 6EC polisher with an IC1000/Suba IV stacked pad and the pad will be conditioned by ex situ diamond disk. And the thickness difference of wafer between before and after polishing test will be measured by Ellipsometer and Nanospec. The roughness of Poly-Si film will be analyzed by atomic force microscope.

• Applied Chemistry for Engineering
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• v.4 no.3
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• pp.497-504
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• 1993

The effect of DCCA (Drying Control Chemical Additives) on the drying of gel was investigated in order to determine an optimum drying condition of mullite precursor through sol-gel process. Aluminium sec-butoxide was synthesized from aluminium foil and then mullite powders were synthesized from Tetra-ethyl-ortho-silicate (TEOS) and the aluminium sec-butoxide. N, N-dimethyl formamide (DMF), Glycerol, 1, 4-Dioxane, and Oxalic acid were used as DCCA. Mullite powders that were calcined at 200, 900, 1100, and $1250^{\circ}C$ for 2hr were analysed by XRD, TG-DTA, FT-IR, and SEM in order to investigate structural change and characteristics of calcined powders. The results of this work showed that the drying time of gel was reduced to about half in the presence of 0.1mol DMF compared with the absence of DCCA and also calcined powders were obtained without remarkable structural change despite of the addition of DCCA.

• Membrane Journal
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• v.18 no.2
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• pp.176-184
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• 2008

Nano-porous ceramic membranes was synthesized by the sol-gel method. Gas permeation of hydrogen and nitrogen was determined by single composition gas. Pore size $0.1{\mu}m$ and porosity 32% of flat type ${\alpha}-Al_2O_3$ substrate was manufactured. An intermediate ${\gamma}-Al_2O_3$ layer with pore size of 4 nm was formed by dip-coating. Polymeric silica sol was synthesized by acid catalyzed hydrolysis and condensation of tetra-ethyl-ortho-silicate. Supported membranes on alumina were prepared by dipping and calcining. He, $N_2$ permeation experiments with nanoporous sol-gel modified supported ceramic membranes were peformed to determine the gas transport characteristics. $He/N_2$ permselectivity around $100{\sim}160$ and helium permeation in the order of $10^{-7}mol/m^2{\cdot}s{\cdot}Pa$ were measured in the temperature range of $303{\sim}363K$.