• Title/Summary/Keyword: Terahertz(THz)

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Periodically Poled BaTiO3: An Excellent Crystal for Terahertz Wave Generation by Cascaded Difference-frequency Generation

  • Li, Zhongyang;Yuan, Bin;Wang, Silei;Wang, Mengtao;Bing, Pibin
    • Current Optics and Photonics
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    • v.2 no.2
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    • pp.179-184
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    • 2018
  • Terahertz (THz) wave generation by periodically poled $BaTiO_3$ (PPBT) with a quasi-phase-matching (QPM) scheme based on cascaded difference-frequency generation (DFG) is theoretically analyzed. The cascaded DFG processes comprise cascaded Stokes and anti-Stokes processes. The calculated results indicate that the cascaded Stokes processes are stronger than the cascaded anti-Stokes processes. Compared to a noncascaded Stokes process, THz intensities from $20^{th}$-order cascaded Stokes processes increase by a factor of 30. THz waves with a maximum intensity of $0.37MW/mm^2$ can be generated by $20^{th}$-order cascaded DFG processes when the optical intensity is $10MW/mm^2$, corresponding to a quantum conversion efficiency of 1033%. The high quantum conversion efficiency of 1033% exceeds the Manley-Rowe limit, which indicates that PPBT is an excellent crystal for THz wave generation via cascaded DFG.

Optical Characteristics of Bolometric Terahertz Sensor (볼로미터형 테라헤르츠 센서의 광학적 특성 연구)

  • Han, Myung Soo;Song, Woosub;Hong, Jung Taek;Lee, Donghee
    • Journal of Sensor Science and Technology
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    • v.27 no.5
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    • pp.335-339
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    • 2018
  • The optical characteristics of a terahertz (THz) antenna-coupled bolometer (ACB) detector were evaluated using a pulsed quantum cascade laser (QCL) and radiation blackbody sources. We investigated a method for measuring the responsivity and noise-equivalent power (NEP) of the THz detector using two different types of light sources. When using a QCL source with a frequency of 3 THz, the average responsivity of 24 devices was $1.44{\times}10^3V/W$ and the average NEP of those devices was $3.33{\times}10^{-9}W/{\surd}Hz$. The average responsivity and NEP as measured by blackbody source were $1.79{\times}10^5V/W$ and $6.51{\times}10^{-11}W/{\surd}Hz$, respectively, with the measured values varying depending on the light source. This was because the output power of each light source was different, with the laser source being driven by a pulse type wave and the blackbody source being driven by a continuous wave. The power input to the THz sensor was also different. Futhermore, the responsivity and NEP values measured using band pass filter (BPF) were similar to those measured when using only THz windows. It was found that ACB sensor responds normally in the THz region to both the laser and the blackbody source, and the method was confirmed to effectively evaluate the characteristics of the THz sensor.

Terahertz Wave Generation via Stimulated Polariton Scattering in BaTiO3 Bulk Crystal with High Parametric Gain

  • Li, Zhongyang;Yuan, Bin;Wang, Silei;Wang, Mengtao;Bing, Pibin
    • Current Optics and Photonics
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    • v.2 no.3
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    • pp.261-268
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    • 2018
  • Stimulated polariton scattering (SPS) from the $A_1$ transverse optical (TO) modes of $BaTiO_3$ bulk crystal generating a terahertz (THz) wave with the noncollinear phase-matching (NPM) condition is theoretically investigated. To our best knowledge, this is the first report on THz wave generation from $BaTiO_3$ bulk crystal via SPS. Phase-matching (PM) characteristics in the NPM configuration are analyzed. Effective parametric gain lengths for the Stokes and THz waves in the NPM configuration are calculated. The effective parametric gain coefficient and absorption coefficient of the THz wave in $BaTiO_3$ are theoretically simulated. The THz phonon flux densities generated via SPS in $BaTiO_3$ are theoretically calculated by solving the coupled wave equations under the NPM condition. The PM characteristics and THz-wave parametric gain characteristics in $BaTiO_3$ are compared to those in $MgO:LiNbO_3$. The results of the analysis indicate that $BaTiO_3$ is an attractive optical crystal for efficient THz wave generation via SPS.

The Conductivity of Silica Sand by Terahertz Electromagnetic Pulses (테라헤르츠 영역에서 분말 이산화규소의 도전률 측정에 관한 연구)

  • 전태인;김근주
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2001.05a
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    • pp.303-306
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    • 2001
  • Using THz time-domain spectroscopy (THz-TDS), the power absorption and the real conductivity of silica sand are measured terahertz frequency range. It is impossible to measure the characterization of the silica sand by simple electrical measurements using mechanical contacts, e.g., Hail effect or four-point probe measurements. However, the THz-TDS technique can measure not only electrical but also optical characterization of the sample. Also this technique can measure frequency dependent results. Especially, the real conductivity was increased according to THz frequency this is unusual material compare with metal and semiconductor materials; the measured real conductivity are not followed by the simple Drude theory.

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Analysis of the THz Resonance Characteristics of H-shaped Metamaterials with Varying Width

  • Ryu, Han-Cheol
    • Current Optics and Photonics
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    • v.5 no.1
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    • pp.66-71
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    • 2021
  • The resonance characteristics of H-shaped metamaterials, whose widths were varied while keeping the height constant, were investigated in the terahertz (THz) frequency range. The H-shaped metamaterials were numerically analyzed in two modes in which the polarization of the incident THz electric field was either parallel or perpendicular to the width of the H-shaped structure. The resonant frequency of the metamaterial changed stably in each mode, even if only the width of the H shape was changed. The resonant frequency of the metamaterial operating in the two modes increases without significant difference regardless of the polarization of the incident electromagnetic wave as the width of the H-shaped metamaterial increases. The electric field distribution and the surface current density induced in the metamaterial in the two modes were numerically analyzed by varying the structure ratio of the metamaterial. The numerical analysis clearly revealed the cause of the change in the resonance characteristics as the width of the H-shaped metamaterial changed. The efficacy of the numerical analysis was verified experimentally using the THz-TDS (time-domain spectroscopy) system. The experimental results are consistent with the simulations, clearly demonstrating the meaningfulness of the numerical analysis of the metamaterial. The analyzed resonance properties of the H-shaped metamaterial in the THz frequency range can be applied for designing THz-tunable metamaterials and improving the sensitivity of THz sensors.

Terahertz time-domain transmission and reflection spectroscopy of niobium

  • Hong, Taeyoon;Choi, Kyujin;Park, Byoung-Cheol;Ha, Taewoo;Sim, Kyung Ik;Ha, Dong-Gwang;Chong, Yonuk;Kim, Jae Hoon
    • Progress in Superconductivity and Cryogenics
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    • v.15 no.1
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    • pp.11-13
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    • 2013
  • We have developed a terahertz time-domain spectroscopy (THz-TDS) system for transmission and reflection measurements of metallic thin films. Using our THz-TDS system, we studied the conventional superconductor niobium (Nb) in the normal state in the spectral range from 5 to $50cm^{-1}$. Both the real and imaginary parts of the conductivity are acquired without Kramers-Kronig analysis. Nb exhibits a nearly frequency independent real conductivity spectrum in the terahertz range, with a very small imaginary part.

Trends in Terahertz Semiconductor based on Electron Devices (전자소자 기반 테라헤르츠 반도체 기술 동향)

  • Kang, D.W.;Koo, B.T.
    • Electronics and Telecommunications Trends
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    • v.33 no.6
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    • pp.34-40
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    • 2018
  • Traditionally, many researchers have conducted research on terahertz technology utilizing optical devices such as lasers. However, nanometer-scale electronic devices using silicon or III-V compound semiconductors have received significant attention regarding the development of a terahertz system owing to the rapid scaling down of devices. This enables an operating frequency of up to approximately 0.5 THz for silicon, and approximately 1 THz for III-V devices. This article reviews the recent trends of terahertz monolithic integrated circuits based on several electronic devices such as CMOS, SiGe BiCMOS, and InP HBT/HEMT, and a particular quantum device, an RTD.

테라헤르츠 펄스 기술

  • Han, Hae-Ok;Yu, Nan-Lee;Jeon, Tae-In;Jin, Yun-Sik;Park, Ik-Mo;Kim, Jeong-Hoe;Mun, Gi-Won;Han, Yeon-Ho;Jeong, Eun-A;Gang, Cheol;Lee, Yeong-Rak;Go, Do-Gyeong;Lee, Ui-Su;Ji, Young-Bin;Kim, Geun-Ju;Han, Gyeong-Ho
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.5
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    • pp.87-103
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    • 2008
  • In recent years, the field of THz photonics based on THz pulse technology has gained tremendous, world-wide interest as a new exciting research subject. With a possibility of many commercial applications as well as fundamental scientific achievements in the field, many advanced nations are stepping up their effort in advancing the field of THz photonics. This fact is supported by the observation of the significant increase in the number of papers on THz pulse technology presented in renowned international journals and conferences. The subject that is interesting for the THz application is the development of THz pulse sources and detectors, and other passive devices. In this paper, we present a brief review on some of the key devices and their relavant measurement techniques such as THz photoconductive antennas, optical rectification, difference frequency geneneration with quasi-phase matching structures, electro-optic sampling, high speed real time measurements, THz transmission lines, and other various waveguide structures.

Application of Terahertz Spectroscopy and Imaging in the Diagnosis of Prostate Cancer

  • Zhang, Ping;Zhong, Shuncong;Zhang, Junxi;Ding, Jian;Liu, Zhenxiang;Huang, Yi;Zhou, Ning;Nsengiyumva, Walter;Zhang, Tianfu
    • Current Optics and Photonics
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    • v.4 no.1
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    • pp.31-43
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    • 2020
  • The feasibility of the application of terahertz electromagnetic waves in the diagnosis of prostate cancer was examined. Four samples of incomplete cancerous prostatic paraffin-embedded tissues were examined using terahertz spectral imaging (TPI) system and the results obtained by comparing the absorption coefficient and refractive index of prostate tumor, normal prostate tissue and smooth muscle from one of the paraffin tissue masses examined were reported. Three hundred and sixty cases of absorption coefficients from one of the paraffin tissues examined were used as raw data to classify these three tissues using the Principal Component Analysis (PCA) and Least Squares Support Vector Machine (LS-SVM). An excellent classification with an accuracy of 92.22% in the prediction set was achieved. Using the distribution information of THz reflection signal intensity from sample surface and absorption coefficient of the sample, an attempt was made to use the TPI system to identify the boundaries of the different tissues involved (prostate tumors, normal and smooth muscles). The location of three identified regions in the terahertz images (frequency domain slice absorption coefficient imaging, 1.2 THz) were compared with those obtained from the histopathologic examination. The tissue tumor region had a distinctively visible color and could well be distinguished from other tissue regions in terahertz images. Results indicate that a THz spectroscopy imaging system can be efficiently used in conjunction with the proposed advanced computer-based mathematical analysis method to identify tumor regions in the paraffin tissue mass of prostate cancer.

Introduction to Terahertz Wave Technology and Its Usage for Nondestructive Testing Evaluation (테라헤르츠파 기술과 이를 이용한 비파괴검사 평가)

  • Kim, Hak-Sung
    • Journal of the Korean Society for Nondestructive Testing
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    • v.34 no.1
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    • pp.68-76
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    • 2014
  • 최근 들어 급격히 발전한 테라헤르츠파 발생/검출 기술에 힘입어 생명, 화학, 기계, 통신 등의 다양한 분야에서 THz 관련 응용 연구가 진행되고 있다. 본 강좌에서는 최신 THz 발생/검출 기술을 분야별로 살펴보고 바이오, 재료, 기계 분야의 비접촉식 비파괴검사 분야에 적용 개발되고 있는 THz 기술에 대하여 기술하고자 한다. 특히, 구조물의 THz 비파괴검사 평가 분야 세부 기술에 대하여 자세하게 소개한다.