• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.75-78
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• 1989

Insulation of P.E insulated cable under the field of high-voltage will be breakdown ultimately due to the degradation process called 'Treeing' which is generated in the insulation, so long as any counter-measure suppressing or eliminating it could not be provided. In this paper as a counter-measure Dodecyl Alcohol is mixed with P.E and Treeing under the temperature variation has been observed. Results show that the larger weight ratio of Dodecyl Alcohol is stronger the effect of suppressing Tree ing in the range from room temperature to 40$^{\circ}C$ and generated Treeing has been soon eliminated and it never again generated.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.593-594
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• 2008

In this article, process voltage temperature (PVT) compensated on-chip oscillator is implemented by using proportional to absolute temperature (PTAT) circuit and process compensator. Process compensator circuit based on current subtracter and PTAT circuit are proposed for compensation of oscillation frequency to cope with process variation and temperature variation. All circuit can operate in the range of $3.5{\sim}5\;V$ supply voltage. It can be applied to PVT insensitive low frequency clock reference generator.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.945-951
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• 1997

Inorder to investigated electrical conduction characteristics of silicone oils due to viscosity variation we studied the electrical conduction properties at temperature range of 10~110[$^{\circ}C$] and electrical field from 1 to 1.33$\times$10$^4$[V/cm] The viscosity of used specimens was low viscous(1, 2, 5[cSt]) silicone oils. It was shown the ohmic conduction characteristics in low temperature and low field by Ion dipole and humidity included specimen. And we known the conduction mechanism due to electron injection by Schottky's effect in the high temperature an d high field region.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.11 no.5
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• pp.642-646
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• 1999

Factors governing the rate of heat exchange comprise the air temperature, the speed of air movement, relative humidity, and relation indoors. Recently, there are many researches on the transient analysis of indoor environmental factors such as the dry bulb temperature, relative humidity and air velocity in miniature models. The purpose of this study is to measure the environmental factors and to analyze and evaluate the characteristics of indoor environment with the different envelope structures using a granite dome model. According to the variation of humidity, the state of interior relative humidity for clay model has an equal tendency, although a little range of variation is shown in comparison to the cement model.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.5
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• pp.484-491
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• 2002

This paper presents the results of a study of voltage-controlled PIN diode attenuators for Ku-band satellite payload and suggests the temperature-compensation method of these attenuators. The PIN diode attenuators are designed using thin-film hybrid techniques. The load resistance for maximum linear characteristics is determined by simulation and measurements. In the case of APD0805, load resistance of 150 $\Omega$ gives attenuator up to 10 dB linear attenuation range per a PIN diode. Also, measurements over temperature of these PIN diode attenuators were performed. From these measurements, designed PIN diode attenuators shows the severe temperature dependency due to forward voltage variation. A temperature compensation method using thermistor is now suggested to compensate the temperature variation of these PIN diode attenuators. This circuit shows good linear characteristics over wide temperature range

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.489-493
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• 2004

The electrical property of MMC is essentially important to some applications such as power transmission lines and cables, electronic and electrical components as well as electromagnetic shielding equipments. The behavior of electrical resistivity of $SiC_{w}/Al$ alloy composites under as-extruded and annealed conditions has been investigated within the temperature range from room temperature to $450^{\circ}C$. It can be seen that within entire temperature range, the electrical resistivity of composites was higher than that of an unreinforced matrix alloy under the same condition of either as-extrusion or annealing. The temperature dependence of both exhibited positive incline like a typical metal. The variation of electrical resistivity of an unreinforced matrix alloy with temperature from ambient temperature to $450^{\circ}C$ was nearly monotonous, while those of composites increased monotonously at low temperature and rose to a high level after about $250^{\circ}C or 275^{\circ}C$. The difference of these temperature dependences on electrical resistivity can be interpreted as qualitatively the interfaces of $SiC_{w}$ fibers and matrix, where act as nucleation sites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.80-84
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• 1993

In this research, we studied the variation of the dielectric loss absorption of the dielectric loss absorption of the sample according with the change to $\^$60/Co-${\gamma}$-ray irradiation dose of the influence of temperature and applied voltage. In order to investigate the effect of irradiation oriented polypropylene film, we have observed dissipation factor within the temperature range of 30∼130 [$^{\circ}C$] and voltage range of 100∼250$^{\circ}C$ [V]. As for the dependency of temperature by dissipation factor, the ${\alpha}$-peak which appears at high temperature increases accordingly to the increasement of irradiation dose which is contributed by the crystal region and moves towards the high temperature. The ${\beta}$-peak which appears at low temperature is origined from dipoles and molecular motions in the amorphous region. As for the dependency of voltage by tan$\delta$, at low temperature the peak of the tan$\delta$, at low temperature the peak of the tan$\delta$ shifts accordingly to the increasement of irradiation dose towards the high temperature region.

• Journal of the Korean Society of Marine Environment & Safety
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• v.26 no.2
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• pp.186-194
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• 2020

In this study, spectral analysis was conducted to identify environmental factors af ecting short-term changes in water temperature in the East, West and South coasts of Korea. The data used in the spectrum analysis is the 2016 summer water temperature, air temperature, tide level and wind data provided by Korea Hydrographic & Oceanographic Agency. In power spectrum results, peaks of water temperature and tide level were observed at same periods in West Sea (Incheon, Pyeungteak, Gunsan and Mokpo) and South Sea (Wando, Goheung, Yeosu, Tongyeong and Masan) where mean tidal range was more than 100 cm. On the other hand, periodicity of water temperature did not appear in East Sea and Busan where the mean tidal range was small. Coherence analysis showed that water temperature was highly correlated with tide in West Sea and three stations(Wando, Goheung and Tongyeong) of South Sea. Especially, correlation between water temperature and tide level in Wando and Tongyeong presented 0.96 at semi-diurnal period. Water temperature in Yeosu seems to have influenced by tide and inflow of fresh water. In Masan, water temperature is influenced by south wind, tide and inflow of fresh water. In East Sea, influence of tide on water temperature is small due to current and small tidal range. As a result of comparing the time series graph, stations where the correlation between water temperature and tide is high show that relatively cold water was inputted at flood tide and flow out at ebb tide. short-term variation of water temperature was affected by tide, but long-term variation over a month was affected by air temperature.

• Journal of Ecology and Environment
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• v.33 no.3
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• pp.187-193
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• 2010

Seed germination is a biological process that is affected by a variety of genetic and environmental factors. The cardinal temperature and thermal time are required for germination. The principal objective of this study was to identify and characterize variations in the base, optimum, and maximum germination temperatures of Haloxylon aphyllum L. from two seed sources, in order to establish models for use in predicting seeding dates. Mature H. aphyllum seeds were germinated at temperatures between 5 and $35^{\circ}C$. The germination behavior of H. aphyllum seeds to different temperature regimens in light was evaluated over a temperature range of $5-35^{\circ}C$ at intervals of $5^{\circ}C$. The rate of germination increased between base and optimum thermal conditions, and decreased between optimum and maximum thermal conditions; the germination rate varied in a linear fashion at both sub-optimal and supra-optimal temperatures. The linear regression fit the range of germination rates at $5^{\circ}C$ to $25^{\circ}C$ and $25^{\circ}C$ to $30^{\circ}C$, and thus the base temperature, optimum temperature, and maximum temperature for the germination of H. aphyllum were measured to be $0.6^{\circ}C$, $25.69^{\circ}C$, $37.90^{\circ}C$, and $1.76^{\circ}C$, $21.56^{\circ}C$, $37.90^{\circ}C$ for Qom and the Fars dune desert respectively.

• Journal of Magnetics
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• v.13 no.2
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• pp.61-64
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• 2008

We studied the effect of the variation of the lattice constant on the electrical properties of $SrRuO_3$ thin films. In order to obtain films with different volumes, we varied the substrate temperature and oxygen pressure during the growth of the films on $SrTiO_3$ (001) substrates. The films were grown using a pulsed laser deposition method. The X-ray diffraction patterns of the grown films at low temperature and low oxygen pressure indicated the elongation of the c-axis lattice constant compared to that of the films grown at a higher temperature and higher oxygen pressure. The in-plane strain states are maintained for all of the films, implying the expansion of the unit-cell volume by the oxygen vacancies. The variation of the electrical resistance reflects the temperature dependence of the resistivity of the metal, with a ferromagnetic transition temperature inferred form the cusp of the curve being observed in the range from 110 K to 150 K. As the c-axis lattice constant decreases, the transition temperature linearly increases.