• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Journal of the korean society of oceanography
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• 제35권4호
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• pp.170-178
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• 2000

Low salinity water was observed during May in the Cheju Strait. Its structure and source were studied by using both the hydrographic data collected not only in the Cheju Strait during 1987-1989 but also in the wider area around Cheju Island extending to the Bank of Changjiang river in 1994 and the current data taken in the Strait during 1987-1989. The water had lower values of temperature, salinity, and density compared with the surrounding water and it was found in the surface layer outside of Tsushima Current Water 10-50 km off Cheju coast. The density of low salinity water was more dependent on salinity than on temperature. The low salinity water flowed into the Strait from the west as a series of intermittent waters whose size was variable in width and in thickness. The low salinity water was originated from the Chanajiang River Diluted Water. In the Cheju Strait, the water showed changes within 3 days on time and 30-50 km on space, and its sudden appearance was marked especially in May. Such strong variability and sudden appearance may be attributed to the beginning stage in May when the fresh water of Changjiang River Diluted Water starts to arrive in the Cheju Strait.

• 한국재료학회지
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• 제24권11호
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• pp.625-631
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• 2014

To investigate the deformation properties of TiC-(5-20) mol% Mo solid solution single crystals at high temperature by compression testing, single crystals of various compositions were grown by the radio frequency floating zone technique and were deformed by compression at temperature from 1250K to 2270K at strain rates from $5.1{\times}10^{-5}$ to $5.9{\times}10^{-3}/s$. The plastic flow property of solid solution single crystals was found to be clearly different among a three-temperature range (low, intermediate and high temperature ranges) whose boundaries were dependent on the strain rate. From the observed property, we conclude that the deformation in the low temperature range is controlled by the Peierls mechanism, in the intermediate temperature range by the dynamic strain aging and in the high temperature range by the solute atmosphere dragging mechanism. The work softening tends to become less evident with an increasing experimental temperature and with a decreasing strain rate. The temperature and strain rate dependence of the critical resolved shear stress is the strongest in the high temperature range. The curves are divided into three parts with different slopes by a transition temperature. The critical resolved shear stress (${\tau}_{0.2}$) at the high temperature range showed that Mo content dependence of ${\tau}_{0.2}$ with temperature and the dependence is very marked at lower temperature. In the higher temperature range, ${\tau}_{0.2}$ increases monotonously with an increasing Mo content.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.615-619
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• 2008

A molecular memory device which has a structure of Al/$Al_2O_3$/ASA-15 LB monolayer/Ti/Al device, was fabricated. To study a charge transfer mechanism of molecular memory devices, current density-voltage (J-V) characteristics were measured at an increasing temperature range from 10 K to 300 K with an interval of 30 K. Strong temperature-dependent electrical property and tunneling through organic monolayer at low bias (below 0.5 V) were appeared. These experimental data were fitted by using a theoretical formula such as the Simmons model. In comparison between the theoretical and the experimental results, it was verified that the fitting results using the Simmons model about direct tunneling was fairly fitted below 0.5 V at both 300 K and 10 K. Hopping conduction was also dominant at all voltage range above 200 K due to charges trapped by defects located within the dielectric stack, including the $Al_2O_3$, organic monolayer and Ti interfaces.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.816-825
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• 2003

Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K～300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.

• Structural Engineering and Mechanics
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• 제59권2호
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• pp.343-371
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• 2016

In this paper thermo-mechanical vibration analysis of a porous functionally graded (FG) Timoshenko beam in thermal environment with various boundary conditions are performed by employing a semi analytical differential transform method (DTM) and presenting a Navier type solution method for the first time. The temperature-dependent material properties of FG beam are supposed to vary through thickness direction of the constituents according to the power-law distribution which is modified to approximate the material properties with the porosity phases. Also the porous material properties vary through the thickness of the beam with even and uneven distribution. Two types of thermal loadings, namely, uniform and linear temperature rises through thickness direction are considered. Derivation of equations is based on the Timoshenko beam theory in order to consider the effect of both shear deformation and rotary inertia. Hamilton's principle is applied to obtain the governing differential equation of motion and boundary conditions. The detailed mathematical derivations are presented and numerical investigations are performed while the emphasis is placed on investigating the effect of several parameters such as porosity distributions, porosity volume fraction, thermal effect, boundary conditions and power-low exponent on the natural frequencies of the FG beams in detail. It is explicitly shown that the vibration behavior of porous FG beams is significantly influenced by these effects. Numerical results are presented to serve benchmarks for future analyses of FG beams with porosity phases.

• 미생물학회지
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• 제37권3호
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• pp.228-233
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• 2001

Salmonella enterica serovar Typhimurium의 대수 생장기 산 적응기전(acid tolerance response; ATR)은 pH 4.5 이하 조건에서 산 적응결과 형성된 것이며, 이것은 세균세포가 강한 산성환경에 노출되었을 때 생존율을 높일 수 있는 기전이다. ATR은 세균의 생장단계에 따라 대수 생장기 ATR과 생장 정지기 ATR로 구분되어질 수 있으며, 각 생장 단계는 산 적응 과정에서 합성되는 고유의 ASP (acid shock protein)가 존재한다. ATR 기전은 낮은 온도 등과 같은 환경조건에 영향을 받는다는 것이 본 실험 결과를 통하여 발견되었다. 낮은 온도 및 약산성 조건에 노출되었을 경우 강한 산성 조건에서 세균의 생존율은 증가하는 양상을 보였으며, 이때의 생존율은 $37^{\circ}C$에서 보여졌던 것보다 높게 나타났다. $25^{\circ}C$에서 산 적응을 하지 않은 경우의 세균은 $37^{\circ}C$와 비교하였을 경우 약 10,000배 정도의 생존율 증가를 보여주었다. 산 내성 반응에 주요한 기능을 담당하는 rpoS 돌연변이주의 산 내성도는 $37^{\circ}C$의 결과와 비교해블 때 저온의 조건에서 산 내성능이 높게 나타났다. 비륵 rpoS 돌연변이주가 저온에서 산 적응 여부에 관계없이 pH 3.1에서 유사한 ATR 양상을 보여주고 있지만, $25^{\circ}C$의 산성 조건에서 rpoS$\Omega$Ap 돌연변이주는 지속적 산 내성도를 나타내지 않음으로써 저온에서도 rpoS 의존성 ATR 기전이 존재하고 있다는 것을 알 수 있었다. 결과적으로 저온 조건에서는 rpoS의존적 및 -비의존적 ATR기전 모두가 존재하는 것으로 여겨진다. 저온 조건과 ATR의 기초연구를 위해서 병원성 5. enterica serovar Typhimurium UK1에서 low temperature acid tolerance (lat) 유전자를 P22-MudJ(Km, lacZ)를 이용한 lacz 오페론 융합법을 사용하여 LF452 latA::MudJ를 분리하였다. LF452 latA::MudJ 돌연변이주는 저온에서 산 적응기전을 보유하지 않았으며, 결과적으로 latA는 $25^{\circ}C$에서 산 적응 내성 기전에 관여하는 중요 유전자로 판단되며, latA의 유전자는 Salmonella Genetic Map상의 21.5 min에 위치하고 있다.

• 한국농림기상학회지
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• 제14권3호
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• pp.119-123
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• 2012

이 연구는 월 기상자료를 이용하여 작물 생육에 중요한 겨울철 저온 발생일수를 효과적으로 추정하기 위해서 수행되었다. 전국 61개 기상관서의 1981~2010년의 30년 간의 일 최저기온자료를 확보하여 $-15^{\circ}C$부터 $5^{\circ}C$까지 각 온도 이하 일수와 월 최저기온의 평균들을 비교한 결과, 1월 최저기온의 평균을 이용하였을 때 저온 발생일수를 가장 적합하게 추정할 수 있었다. 1월 최저기온 평균자료로부터 기준온도 이하가 되는 저온 발생일수를 추정할 수 있는 2차 함수 형태의 간단한 추정식을 제시하였다. 여러 온도 범위에서 추정식을 활용하기 위하여 추정식의 계수를 저온을 평가하는 기준온도로부터 구할 수 있도록 두 개의 2차 함수식을 도출하였고, 이 식들은 결정계수가 0.995 이상이었다. 분석에 이용된 자료와 기간을 달리하여 1971~2000년 30년 일 기상자료를 이용하여 검증해본 결과 기준온도 $-10{\sim}0^{\circ}C$ 범위에서는 저온 발생일수를 비교적 정확하게 예측할 수 있었으나, $-15^{\circ}C$에서는 다소 과소하게 추정되는 결과를 보였다.

• 한국염색가공학회지
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• 제19권1호
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• pp.45-52
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• 2007

Polyacrylonitrile(PAN) fiber was treated with low-temperature plasmas of argon and oxygen for surface modification, and its surface chemical structure and morphology were examined by a field emission scanning electron microscope(FESEM) and a Fourier-transform infrared microspectroscopy(IMS). The argon-plasma treatment caused the only mechanical effect by sputtering of ion bombardment, whereas the oxygen plasma brought about a chemical effect on the PAN fiber surface. The experimental evidences strongly suggested that cyclization of nitrile group and crosslinking were likely to occur in the oxygen-plasma treatment. On the other hand, with the argon-plasma treatment, numerous my pits resulted in ranging from several tens to hundreds nanometers in radius. The plasma sensitivity of functional groups such as C-H, $C{\equiv}N$, and O-C=O groups in the PAN fiber was dependent on their chemical nature of bonding in the oxygen-plasma, in which the ester group was the most sensitive to the plasma. Vacuum-ultraviolet(VUV) radiation emitted during plasma treatment played no substantial role to alter the surface morphology.

• 한국세라믹학회지
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• 제36권9호
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• pp.930-936
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• 1999

For LiMn2O4 based spinel structures the stoichiometric reaction conditions need be considered carefully because the electrical properties depend on the structural stability. In order to obtain the homogeneous compound the Pechini process was chosen which could obtain a stoichiometry phase even low temperature and dependency of the synthetic condition on structural stability and electrochemical performance was investigated. X-ray diffraction studies showed that the compounds doped with transition metal have smaller lattice constants than those un doped. The dc conductivity was evaluated by a four probe method in the low and high temperature region respectively. The variations of basal spacings for the cathode were detected to be dependent on the extent of current flows (under dc)