• 센서학회지
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• 제6권5호
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• pp.392-399
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• 1997

본 연구에서는 $0.125Pb(Mg_{1/2}Nb_{2/3})O_{3}-0.435PbTiO_{3}-0.44PbZrO_{3}$의 조성을 갖는 hard계 압전 재료에 0.5 wt%의 $MnO_{2}$를 첨가하였으며, 이 시편으로 초음파 전동기를 제작하고자, 소결 온도에 따른 시편의 유전 및 압전특성에 대하여 연구하였다. 실험 결과, $1270^{\circ}C$의 소결 온도에서 다음과 같이 가장 우수한 압전특성을 나타냈다. 즉 시편의 밀도는 $7.72\;g/cm^{3}$ 유전상수는 570, 유전손실은 0.82 %f, 잔류분극 Pr은 $19.18{\mu}C/cm^{2}$ 항전계 Ec는 9.63 kW/cm, 전기기계 결합계수 kp는 55.1%, 기계적 품질계수 Qm은 886이 되었다. 또한 $1270^{\circ}C$ 에서 소결된 시편의 유전상수 및 유전손실을 주파수 변화와 온도 변화에 따라 조사하였다.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.18-22
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• 2006

Epitaxial aluminum nitride films on 6H-SiC (0001) were fabricated using reactive RF magnetron sputtering and post-deposition rapid thermal annealing. The electrical properties of AIN films depending on film thickness and measurement temperature have been observed. Full width at half maximum of AIN (0002) was $0.1204^{\circ}$ (about 430 arcsec) X-ray rocking curve results. The equivalent oxide thickness (EOT) of AIN film was estimated as about 10 nm and the leakage current density was within the order of $10^{-8} 4/cm^2$. The dielectric constant of AIN film estimated from the accumulation region of C-V curve measured at $300^{\circ}C$ was 8.3. The dynamic dielectric constant was obtained as 5.1 from J vs. 1/T plots at the temperature ranging from R.T. to $300^{\circ}C$ From above, estimation temperature dependance of the electrical properties of Al/AIN/SiC MIS devices was affirmed and useful data compilation for the reliabilities of SiC MIS is expected.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.396-401
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• 2000

In order to accurately measure the high voltage of 22.9[kV] power distribution lines we investigated the temperature dependence of measuring voltage on the number of stack layers in the voltage measurement system made from single and stack voltage divider capacitors (22, 44, 66 layers, respectively). Temperature coefficient of dielectric constant(TC$\varepsilon_{{\gamma}}$/)of voltage divider capacitors which were fabricated by BaTi $O_3$system ceramics showed the variations from -2.28% to +1.69% in the range of -25[$^{\circ}C$] ~50[$^{\circ}C$]) was decreased with increasing of stack number and the stack element of 66 layers showed the least error of $\pm$0.87%or of $\pm$0.87%.

• 한국세라믹학회지
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• 제50권1호
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• pp.70-74
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• 2013

Dependence of microwave dielectric properties on the crystallization behaviors of $CaMgSi_2O_6$ (diopside) glass-ceramics was investigated with different heat treatment methods (one and/or two-step). The crystallization behaviors of the specimens, crystallite size and degree of crystallization, were evaluated by differential thermal analysis (DTA), scanning electron microscope (SEM) and X-ray diffraction (XRD) analysis by combined Rietveld and reference intensity ratio (RIR) methods. With an increase in heattreatment temperature, the dielectric constant (K) and the quality factor (Qf) increased due to the increase of the crystallite size and degree of crystallization. The specimens heat-treated by the two-step method had a higher degree of crystallization than the specimens heat-treated by the one-step method, which induced improvement in the quality factor (Qf) of the specimens.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1487-1489
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• 2001

The tantalum oxide($Ta_2O_5$) is an important material for present thin-film capacitor application owing to its high dielectric constant and thermal stability. We report dielectric property of Si(p type)/Pt/$Ta_2O_5$/Ag based MIM structure obtained by RF sputtering and annealed in vacuum environment. We have measured and researched the characteristics of C-F, C-V and EPMA. And we describe parameter dependence on sputtered condition and annealed temperature with dielectric property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.65-67
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• 1990

In this study, (0.80-x)Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ 0.05$\leq$x$\leq$0.20) ceramics were fabricated by the mixed oxide method, the sintering temperature and time were 950∼1200[$^{\circ}C$], 2[hr], respectively. The dielectric and structural properties with composition and sintering temperature were investigated for the application as multilayer ceramic capacitors. Dielectric constant of 0.70PMN-0.2PT-0.10PNW composition with repeated calcination was increased rapidly. Increasing the Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ contents from 0.05 to 0.20 [mol], phase transition temperature was shifted from 68 to 2[$^{\circ}C$] and dielectric constant was decreased while sintered density was increased. In the specimens containing 0.10, 0.15[mol] of PNW, dielectri constants at room temperature were exhibited the highest values 11199, 10114, respectively. Resistivity of specimens were $10^{10}$ ∼ $10^{12}$($\Omega$.m) and there was no dependence on sintering temperature and composition.

• 한국세라믹학회지
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• 제26권1호
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• pp.43-50
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• 1989

This experiment was conducted to investigate correlation between microstructure and electrical properties according to Zr/Ti mole ratio in Rhombohedral Phase PZT. Domain behavoir was investigated by the change of thermal expansion coefficient. Piezoelectric properties, the temperature dependence of dielectric constant and the change of dielectric constant before and after poling were measured. Crystal structure, the measurement of lattice parameter were carried by X-ray analysis. Domain pattern before and after poling was examined by SEM.

• 한국세라믹학회지
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• 제47권2호
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• pp.163-168
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• 2010

Effects of compositions on the microwave dielectric properties of the MgO-$TiO_2$ system were investigated as a function of the molar ratio of MgO to $TiO_2$ ($0.9{\leq}MgO/TiO_2\;(x){\leq}1.2$). With the compositional changes, secondary phases of $MgTi_2O_5$ and $Mg_2TiO_4$ were also detected along with $MgTiO_3$. Microwave dielectric properties of the specimens were dependent on the types of phases developed in the sintered specimens. A single phase of $MgTiO_3$ showed a dielectric constant (K) of 18.2, a quality factor (Qf) of 198,000 GHz, and a temperature coefficient of resonant frequency (TCF) of $-51\;ppm/^{\circ}C$. However, the dielectric properties of the specimens with a secondary phase of $MgTi_2O_5$ (K=19.9, Qf=48,000 GHz) and/or $Mg_2TiO_4$ (K=15.6, Qf=56,000 GHz) were worsened. Dependence of the microwave dielectric properties on the secondary phase of the MgO-$TiO_2$ system was also discussed in terms of dielectric mixing rules.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.19.1-19.1
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• 2011

Effects of particle size, crystal structures and multilayer structures of $ATiO_3$, $ATa_2O_6$, $ANb_2O_6$, $AWO_4$, and $AMoO_4$ (A=Ni, Mg, Zn, Co) ceramic fillers on the dielectric properties of polystyrene (PS), polypropylene (PP) and polytetrafluoroethylene (PTFE) polymer matrices were investigated at microwave frequencies. The microwave dielectric properties of $ATiO_3$ (ilmenite), $ATa_2O_6$ (tri-rutile), $ANb_2O_6$ (columbite), AWO4 (wolframite), and AMoO4 (wolframite) ceramics were largely dependent on the structural characteristics of oxygen octahedra. The dielectric constant (K) of the composites was increased with the ceramic content. However, the dielectric loss (tan ${\delta}$) of the composites was affected by the type of ceramics and the crystallinity of polymers. For the composites with same amount of ceramics, the K was decreased and the tan ${\delta}$ was increased with the particle size of ceramics. Also, the dielectric properties of the composites were dependent on the multilayer structures with different arrangements. Several theoretical models have been employed to predict the effective dielectric properties of the composites. The frequency dependence of dielectric properties and the temperature coefficient of resonant frequency (TCF) of the composites were also discussed.

• 한국결정성장학회지
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• 제32권5호
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• pp.175-182
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• 2022

MLCC(Multi-Layer Ceramic Capacitor)의 유전체 층에 사용되는 BaTiO₃는 유전 특성의 온도안정성을 향상시키기 위해 첨가제로서 희토류 및 Mg를 사용한다. 이러한 첨가제는 소결 중 입자성장 및 치밀화 거동, 결국 유전 특성에 지대한 영향을 주게 되므로 조성에 따른 미세구조 발현 양상을 살펴보는 것이 중요하다. 본 연구는 95BaTiO₃-1Dy₂O₃-2MgO-2SiO₂(mol%)의 조성에서 온도 변화에 따른 결정구조, 입자성장 및 밀도 변화를 관찰하고 이러한 변화가 유전 상수에 미치는 영향을 관찰하였다. 1200~1300℃의 온도범위에서 소결 온도가 증가함에 따라, 평균 입도는 눈에 띄게 커지는 반면 밀도의 변화는 미미하여 입자크기가 주요한 미세구조적 요소임을 밝혔다. 본 실험에서 관찰된 입자크기의 온도의존성은 기존 입자성장 이론에서 설명한 온도 변화에 따른 입자성장 거동의 변화양상과 잘 부합하였으며, 이러한 이해는 향후 희토류가 첨가된 BaTiO₃에서 유전 특성 향상을 위한 소결 미세구조 제어에 유용하게 활용될 수 있을 것이다.