• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.864-870
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• 1998

The effect of {{{{ {{Nb }_{2 }O }_{5 } }} and CoO addition on the temperature dependence of the {{{{ {BaTiO }_{3 } }}-based ceramic capa-citor has been studied. X7R with moderate temperature dependence has been developed by means of pre-cisely controlled {{{{ {{Nb }_{2 }O }_{5 } }}/CoO ratio. Dielectric constant(K) and dissipation factor(DF) were 3500 and 1.5% respectively. As the content of {{{{ {{Nb }_{2 }O }_{5 } }} was increased the curie temperature(Tc) was shifted to lower tem-perature and the dielectric constant at Tc was decreased. The proper addition of CoO with {{{{ {{Nb }_{2 }O }_{5 } }} improved the temperature dependence of dielectric properties of the {{{{ {BaTiO }_{3 } }}-based ceramic capacitor.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1388-1390
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• 1995

The characteristic of dielectric breakdown in solid insulating material dominates the reliability and safety of power equipment and affects directly to its life. In this point of view, the thickness and temperature dependence of dielectric breakdown strength and mechanism of dielectric breakdown in low density polyethylene which has been employed widely as insulating material have been technically reviewed by examinations of thermal property. The dielectric breakdown strength depending on its thickness was measured 2.6[MV/cm] at the thickness of 20[${\mu}m$] and 1.9[MV/cm] at the thickness of 75[${\mu}m$] based on ambient temperature of 30[$^{\circ}C$]. It is shown the temperature dependence that dielectric breakdown strength decreases in linear as the thickness increases. The dielectric breakdown strength depending on temperature was measured 2.6[MV/cm] at the temperature of 30[$^{\circ}C$], 1.6[MV/cm] at 60[$^{\circ}C$] and 1.3[MV/cm] at 90[$^{\circ}C$] based on the thickness of 20[${\mu}m$]. As the ambient temperature increases, the temperature dependence is shown that a very large drop is occurred up to temperature of 60[$^{\circ}C$] and a very small drop is discovered over 60[$^{\circ}C$].

• Journal of radiological science and technology
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• v.11 no.1
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• pp.33-41
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• 1988

This study was measured the radiation-induced current - X-ray dose, dose rate, X-ray quality, time, temperature, electric field characteristics and the dependence of gap length in insulating oil under of D.C. Voltage before, during and after X-ray irradiation. The obtained results can be summarized as following. 1. The radiation - induced current is more the dependence of X-ray quality (tube voltage) than quantity (tube current), the dependence of quantity is appeared at the high than low X-.ay tube voltage. 2. The dependence of dose rate is appeared at the more dose rate, and ${\triangle}\;=\;0.64{\sim}0.74$. 3. The higher temperature of insulating oil and X-ray tube voltage (X-ray quality) is increased, at the low electric field, the more radiation-induced current. 4. $G_{eq}-G_{o}(={\triangle}G)$ is increased at the low than high temperature, high than low X-ray quality. 5. The dependence of temperature is appeared before than during X-ray irradiation. 6. The RIC saturation region is appeared at the high than low insulating oil temperature during (1000 V/cm above) than before (4000 V/cm above) X-ray irradiation.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.515-518
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• 1995

We have studied the magnetization in fields up to 1T at 5K, the saturation magnetization dependence on temperature and the temperature dependence of AC-susceptibility at very low fields (5mOe to 50mOe) of glassy $Fe_{91-x}Zr_{7}B_{2}Ni_{x}$ (x = 0, 5, 10, 15) alloys. The temperature dependence of the magnetization follows the predictions of spin wave excitations with long wavelengths. At zero Ni concentration there is a clear competition between ferromagnetic and antiferromagnetic interactions giving rise to spin-glass behaviour. The addition of Ni drastically modifies the magnetic properties: the antiferromagnetic exchange coupling is reduced and finally disappears, the spin wave stiffness increases from 39.5 to $87.3\;meV{\AA}^{2}$ and To increases from 230 K to 478 K. We develop a simple model to quantify the competing interactions and to relate the antiferromagnetically coupled Fe moments to the Ni concentration. We find that the initial susceptibility increases with increasing Ni content along with a decrease of the temperature dependence.

• Journal of the Korean Ceramic Society
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• v.48 no.3
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• pp.205-210
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• 2011

The dependence of sulfur redox behavior and its diffusivity on temperature and composition was studied in mixed alkali silicate melts by means of square wave voltammetry (SWV) at different frequencies in a temperature range of $1000^{\circ}C$ to $1400^{\circ}C$. The voltammograms showed two reduction peaks at high frequency but only one peak at low frequency. Irrespective of $K_2O/(Na_2O+K_2O)$, each peak potential due to reduction of $S^{6+}$ to $S^{4+}$ and $S^{4+}$ to $S^0$ moved toward a negative direction with temperature decrease, and the peak current showed a strong dependence on frequency at a constant temperature. However, the compositional dependence of the peak potential showed an inconsistent behavior with an increase of $K_2O$. The mixed alkali effect was not observed in sulfur diffusion. This inconsistency of both peak potential and diffusion for compositional dependence may be derived from the strong volatilization of sulfur in melts.

• Transactions of the Korean hydrogen and new energy society
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• v.6 no.1
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• pp.17-22
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• 1995

Thermally evaporated Pd films on substrate were hydrogenated upto 1 bar of hydrogen gas at room temperature. Temperature dependence hange of electrical resistivity on Pd films is examined in the thickness range between $60{\AA}$ and $990{\AA}$. Resistivity of Pd is fitted well with Bloch-$Gr{\ddot{u}}neisen$ formula. Debye temperatures of Pd films are about 254 K, which are 20 K lower than that of bulk Pd. Debye temperature is not sensitive to film thickness change. Temperature of substrate during evaporation changes temperature dependence of resistivity of films much. Optical phonon contribution increases with decreasing temperature of PdHx.

• Journal of Magnetics
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• v.7 no.2
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• pp.59-62
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• 2002

Magnetic tunnel junctions (MTJs) were fabricated with high bias for plasma oxidation and the effects of annealing on the temperature dependence of tunneling magnetoresistance (TMR) were investigated experimentally. As-grown, TMR increases, peaks around 160 K, and decreases with increasing temperature from 80 K to 300 K. When MTJs are annealed, $T_{max}$, the temperature at which maximum TMR is obtained, decreases as annealing temperature increases to the optimal point. In order to explain this abnormal temperature dependence of TMR, the difference of conductance between parallel and antiparallel alignments of magnetizations as a function of temperature is also analyzed. The shifts of $T_{max}$ due to annealing process are described phenomenologically with spin-dependent transfer rates of electrons tunnel through the barrier.

• Bulletin of the Korean Chemical Society
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• v.13 no.6
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• pp.595-599
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• 1992

The temperature dependence of C-13 chemical shifts are observed for the cyclooctanone arylhydrazones. The temperature-dependent chemical shifts for these derivatives are explained by postualating the existence of two equilibrating structures. In addition, the assignment between the $^{13}C$ signals of methylene carbon pairs can be done by application of the ${gamma}$ -substituent effect.

• Journal of Magnetics
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• v.2 no.3
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• pp.93-95
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• 1997

We investigated the temperature dependence of magnetization of Fe/Al multilayers fabricated by dc magnetron sputtering system. As the temperature increased from 5 K in a low magnetic field (100G) the magnetization of the samples increased and made a broad peak at some critical temperature. Further increase of temperature decresed the magnetization as an ardinary ferromagnetic curve. Part of samples show rapid increase of magnetization at low temperature. A model developed in this study suggests that the biquadratic coupling yields such a rapidly increasing behavior of magnetization at low temperature.

• Bulletin of the Korean Chemical Society
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• v.27 no.3
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• pp.381-385
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• 2006

The temperature dependence on the electron transfer rate constant $(k_{app})$ for hydroquinone redox center in $H_2Q(CH_2)_n$SH-SAMs (n = 1, 4, 6, 8, 10, and 12) on gold electrode was investigated to obtain reorganization energy $(\lambda)$ using Laviron’s formalism and Arrhenius plot of ln $[k_{app}/T^{1/2}]$ vs. T^{-1} based on the Marcus densityof-states model. All the symmetry factors measured for the SAMs were relatively close to unity and rarely varied to temperature change as expected. The electron tunneling constant $(\beta)$ determined from the dependence of the $k_{app}$ on the distance between the redox center and the electrode surface gives almost the same $\beta$ values which are quite insensitive to temperature change. Good linear relationship of Arrhenius plot for all $H_2Q(CH_2)_n$SH-SAMs on gold electrode was obtained in the temperature range from 273 to 328 K. The slopes n Arrhenius plot deduced that $\lambda$ of hydroquinone moiety is ca. 1.3-1.4 eV irrespectively of alkyl chain length of the electroactive SAM.