• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.118-122
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• 2001

The ${\beta}-SiC+TiB_2$ ceramic electroconductive composites were pressureless-sintered and annealed by adding 12wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a function of sintering temperature. The relative density is over 78.83% of the theoretical density and increased with increasing sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), $TiB_2$, $Al_5Y_2O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 140 MPa for composites sintered at $1900^{\circ}C$. The vicker's hardness increased with increasing sintering temperature and showed the highest of 4.07 GPa at $1900^{\circ}C$. Owing to YAG, the fracture toughness showed the highest of 4.07 $MPa{\cdot}m^{1/2}$ for composites at $1900^{\circ}C$. The electrical resistivity was measured by the Pauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).

• 마이크로전자및패키징학회지
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• 제13권1호통권38호
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• pp.31-35
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• 2006

본 논문에서는 전력용 반도체 스위칭 소자인 SCR(Silicon Controlled Rectifier)과 적층형 PTC 서미스터의 전기적 특성을 이용하여 각종 전기화재 및 전기사고를 예방 보호하는 제어시스템에 대해 연구된다. PTC(Positive Temperature Coefficient) 서미스터는 온도변화에 따른 저항특성이 정(+)온도계수를 갖는 특징이 있다. 이 PTC는 정온도계수를 갖는 $BaTiO_3$계 세라믹스의 정방정계-입방정계 구조를 가지고 상변이점인 큐리(Curie)온도 이상으로 온도가 증가하면 저항이 급격히 증가하는 현상을 보인다. 본 논문에서는 이러한 정저항 온도특성과 자체 발열특성을 갖는 적층형 PTC 서미스터를 전기단락사고나 과부하사고 등의 전기사고의 감지센서로 이용하여 전기화재사고로부터 보호하는 제어시스템에 대해 제안한다. 또한 제안된 보호제어시스템의 다양한 실험결과를 통해 이론적 해석의 타당성을 입증시킨다.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.809-814
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• 2014

Spinel thin films were prepared by the spin spray technique to develop new thermal imaging materials annealed at low temperature for uncooled microbolometer applications. The spinel thin films were deposited from $[(Ni_{0.30}Co_{0.33}Mn_{0.37})_{1-x}Cu_x]_3O_4$ ($0.1{\leq}x{\leq}0.2$) solutions and then annealed at $400^{\circ}C$ for 1 h in argon. Effects of Cu content (x) and deposition time on the electrical properties of the annealed films were investigated. With increasing deposition time, the resistivity of the annealed films increased. For the annealed films deposited for 1 min, the resistivity of x=0.15 films was lower than that of x=0.1 films due to the different grain sizes. The high temperature coefficient of resistance (TCR) of the annealed films could be obtained at temperature below $50^{\circ}C$. Typically, the resistivity of $127{\Omega}{\cdot}cm$ and TCR of -5.69%/K at $30^{\circ}C$ were obtained for x=0.1 films with deposition time of 1 min annealed at $400^{\circ}C$ for 1 h in argon.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1228-1229
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• 폴리머
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• 제32권4호
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• pp.353-358
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• 2008

EPDM에 maleic anhydride를 그래프트시켜 말레화 EPDM(MEPDM)을 제조하고 여기에 양 말단에 hydroxyl기를 갖는 $\alpha$,$\omega$-poly(dimethylsiloxane)(PDMS)을 반응시켜 MEPDM-g-PDMS 공중합체를 제조하였다. MEPDM-g-PDMS와 HDFE 및 4-ethoxybenzoic acid로 표면처리된 MWCNT를 internal mixer에 가하고 $180^{\circ}C$에서 컴파운딩하여 MEPDM-g-PDMS/HDPE/CNT 복합체를 제조하였다. 복합체에서 CNT의 모폴로지를 전자현미경으로 측정한 결과 표면처리된 CNT를 사용한 경우가 분산이 균일하게 이루어졌으며 입자의 응집현상도 감소되는 것으로 나타났다. 온도변화에 따른 전기저항은 용융온도부근에서 전기저항이 급격히 증가하였으며 EtO-CNT의 함량을 15%로 하여 제조한 복합체의 경우가 PTC intensity가 2.3으로 가장 우수한 PTC 특성을 나타내었다.

• 지구물리와물리탐사
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• 제18권3호
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• pp.105-114
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• 2015

상온 상습 환경에서 수포화 암석코어의 전기비저항을 장시간 모니터링 할 수 있는 장치를 구현하였다. 양쪽 금속망 전극에 덧댄 종이필터와 암석코어를 감싼 열수축튜브의 상부 중앙 외피면에 3-채널 펌프로 물을 충분히 공급하면서 전기저항을 측정하면 암석코어의 수포화 상태를 유지하면서 일주일 이상 전기비저항을 모니터링 할 수 있다. 이 장치를 이용하여 흑운모 편마암, 안산암질 응회암, 셰일의 3종류 암석코어의 수포화 전기저항을 9일간 모니터링 한 결과 다음과 같은 2가지 가설을 제시할 수 있었다. 즉, 전기비저항 온도계수의 수렴 속도는 열물성과 관련이 있을 것이라는 것과 건조 저항을 수포화 때의 평균 저항으로 나눈 건조/수포화 저항비는 유효공극률과 상관될 것이라는 것이다. 실제로, 3가지 암석의 건조/수포화 저항비는 각각 48, 705, 2로 나타났고 이때 각각의 유효공극률은 3.7%, 3.3%, 13.0%이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1022-1025
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• 2001

This paper presents the characteristics of TaN thin-film as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼20%)N$_2$). The electrical and mechanical characteristics of these films investigated with the thickness range 1650∼1870${\AA}$ and room temperature resistivities in the range 178.3 ${\mu}$$\Omega$cm to 3175.7 ${\mu}$$\Omega$cm. The TaN thin-film strain gauge deposited in Ar-(20%)N$_2$atmosphere is obtained a temperature coefficient of resistance(TCR), 0∼-1357 ppm/$^{\circ}C$ in the temperature range 25∼275$^{\circ}C$ and a high temporal stability with a longitudinal gauge factor, 2.92∼3.47. Because of their high resistivity, low TCR and linear gauge factor, these cermet thin-film may allow high-temperature strain gauges miniaturization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.839-842
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-SiC-ZrB$_2$ electroconductive ceramic composites were investigated as function of the liquid forming additives of $Al_2$O$_3$+Y$_2$O$_3$. Phase analysis of composites by XRD revelled $\alpha$ -SiC(6H), ZrB$_2$, and YAG(Al$_{5}$ Y$_3$O$_{12}$ ). Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of 6.3MPa.m$^{1}$2/ for composites added with 24wt% $Al_2$O$_3$+Y$_2$O$_3$additives at room temperature. The resistance temperature coefficient respectively showed the value of 2.46$\times$10$^{-3}$ , 2.47$\times$10$^{-3}$ , 2.52$\times$ 10$^{-3}$ $^{\circ}C$ for composite added with 16, 20, 24wt% A1$_2$O$_3$+Y$_2$O$_3$additives. The electircal resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to 90$0^{\circ}C$.

• 대한전기학회논문지
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• 제45권1호
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• pp.81-85
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• 1996

Microwave dielectric properties of 0.15(B $a_{x}$S $r_{0.05}$)O-0.15(S $m_{2}$(1-y)N $d_{2y}$) $O_{3}$-0.7Ti $o_{2}$(x=o.9~0.1[mol.], y=6[m/o]) ceramics were investigated with BaO compositional ratio. Sintered density and resistivity of specimens were independent on the BaO compositional ratio. In the specimen with x=0.975[mol.], dielectric constant, quality factor and temperature coefficient of resonant frequency had good values of 76.52, 3001(at 3[GHz]) and +0.71[ppm/.ceg. C], respectively. By comparing with the stoichiometric compositions of 78.14, 2938(at 3[GHz])+14.19[ppm/.ceg. C], dielectric constant and quality factor showed similar properties, but the temperature coefficient of resonant frequency was highly improved. (author). refs., figs., tabs.s.s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.32-32
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• 2008

Microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of $0.9BaTiO_3-0.1(Bi_{0.5}Na_{0.5})TiO_3$ [BaBiNT] ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free high Curie temperature ($T_c$)(>$160^{\circ}C$) PTC thermistor. The BaBiNT ceramics showed a tetragonal perovskite structure, irrespective of the added amount of $Nb_2O_5$. They also have a homogeneous microstructure. The resistivity of BaBiNT ceramics was gradually decreased by doping $Nb_2O_5$, which might be due to $Nb^{+5}$ ions substituting for $Ti^{+4}$ sites. The PTCR characteristics of BaBiNT ceramics appeared when the amount of doped $Nb_2O_5$ exceeded 0.0025mol%. Moreover, the abrupt grain growth was observed for the 0.03mol% $Nb_2O_5$added BaBiNT ceramics. It showed an especially high $T_c$ of approximately $172^{\circ}C$ and good PTCR characteristics of a high $\rho_{max}/\rho_{min}$ ratio ($2.96\times10^3$), a high resistivity temperature factor (11.40/$^{\circ}C$) along with a relatively low resistivity ($3.5\times10^4\Omega{\cdot}cm$).