• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2449-2452
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• 2007

Hot spots on thin wafers of IC packages are becoming important issues in thermal and electrical engineering fields. To investigate these hot spots, we developed a Diode Temperature Sensor Array (DTSA) that consists of an array of 32 ${\times}$32 diodes (1,024 diodes) in a 8 mm ${\times}$ 8 mm surface area. To know specifically the hot spot temperature which is affected by the chip thickness and a generated power, we made the DTSA chips, which have 21.5 ${\mu}m$, 31 ${\mu}m$, 42 ${\mu}m$, 100 ${\mu}m$, 200 ${\mu}m$, and 400 ${\mu}m$ thickness using the CMP process. And we conducted the experiment using various heater power conditions (0.2 W, 0.3 W, 0.4 W, 0.5 W). In order to validate experimental results, we performed a numerical simulation. Errors between experimental results and numerical data are less than 4%. Finally, we proposed a correlation for the hot spot temperature as a function of the generated power and the wafer thickness based on the results of the experiment. This correlation can give an easy estimate of the hot spot temperature for flip chip packaging when the wafer thickness and the generated power are given.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.8-14
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• 2008

A fully CMOS-integrated carbon nanotube (CNT) sensor array is proposed. After the sensor chip is fabricated in commercial CMOS process, the CNTs network is formed on the top of the fabricated sensor chip through the room-temperature post-CMOS processes. When the resistance of the CNT is changed by the chemical reaction, the read-out circuit in the chip measures the charging time of the $R_{CNT}$-Capacitor. finally the information of measured frequency is converted to a digital code. The CMOS sensor chip was fabricated by standard 0.18um technology and the size of the $8{\times}8$ sensor array is $2mm{\times}2mn$. We have carried out an experiment detecting the biochemical material, glutamate, using this sensor chip. From the experiment the CMOS sensor chip shows the feasibility of sensor for the simultaneous detection of the various target materials.

• International Journal of Aeronautical and Space Sciences
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• v.17 no.1
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• pp.37-44
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• 2016

Optical fiber temperature sensing systems have incomparable advantages over traditional electrical-cable-based monitoring systems. However, the fiber optic interrogators and sensors have often been rejected as a temperature monitoring technology in real-world industrial applications because of high cost and over-specification. This study proposes a multiplexed fiber optic temperature monitoring sensor system using an economical Optical Time-Domain Reflectometer (OTDR) and Hard-Polymer-Clad Fiber (HPCF). HPCF is a special optical fiber in which a hard polymer cladding made of fluoroacrylate acts as a protective coating for an inner silica core. An OTDR is an optical loss measurement system that provides optical loss and event distance measurement in real time. A temperature sensor array with the five sensor nodes at 10-m interval was economically and quickly made by locally stripping HPCF clad through photo-thermal and photo-chemical processes using a continuous/pulse hybrid-mode laser. The exposed cores created backscattering signals in the OTDR attenuation trace. It was demonstrated that the backscattering peaks were independently sensitive to temperature variation. Since the 1.5-mm-long exposed core showed a 5-m-wide backscattering peak, the OTDR with a spatial resolution of 40 mm allows for making a sensor node at every 5 m for independent multiplexing. The performance of the sensor node included an operating range of up to $120^{\circ}C$, a resolution of $0.59^{\circ}C$, and a temperature sensitivity of $-0.00967dB/^{\circ}C$. Temperature monitoring errors in the environment tests stood at $0.76^{\circ}C$ and $0.36^{\circ}C$ under the temperature variation of the unstrapped fiber region and the vibration of the sensor node. The small sensitivities to the environment and the economic feasibility of the highly multiplexed HPCF temperature monitoring sensor system will be important advantages for use as system-integrated temperature sensors.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.311-316
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• 2018

An antenna-coupled bolometer-type terahertz sensor was designed, fabricated, evaluated, and utilized to obtain terahertz transmission images. The sensor consists of a thin film bowtie antenna that resonates accordingly in response to an incident terahertz beam, a heater that converts the applied current in the antenna into heat, and a microbolometer that converts the rise in temperature into a change in resistance. The device is fabricated by a bulk micromachining process on a 4-inch silicon wafer. The fabricated sensor chip has a size of $2{\times}2mm$ and an active area of $0.1{\times}0.1mm^2$. The temperature coefficient of resistance (TCR) of the bolometer film (VOx) is 2.0%, which is acceptable for bolometer applications. The output sensor signal is proportional to the power of the incident terahertz beam. Transmission images were obtained with a 2-axis scanning imaging system that contained the sensor. The small active area of the sensor will enable the development of highly sensitive focal plane array sensors in terahertz imaging cameras in the future.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.8
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• pp.75-82
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• 2013

We propose a fiber grating sensor system for condition monitoring of large scale wind turbine blades. For the feasibility test of the proposed sensor system, a down-scaled wind turbine has been constructed and experimented. Fiber grating sensors were attached on a blade surface for distributed strain and temperature measurements. An optical rotary joint was used to transmit optical signals between the FBG sensor array and the signal processing unit. Instead of broadband light source, we used a wavelength-swept fiber laser to obtain high output power density. A spectrometer demodulation is used to alleviate the nonlinear wavelength tuning problem of the laser source. With the proposed sensor system we could measure dynamic strain and temperature profiles at multi-positions of rotating wind turbine blades.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.300-305
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• 2018

The uncooled microbolometer thermal sensor for low cost and mass volume was designed to target the new infrared market that includes smart device, automotive, energy management, and so on. The microbolometer sensor features 80x60 pixels low-resolution format and enables the use of wafer-level vacuum packaging (WLVP) technology. Read-out IC (ROIC) implements infrared signal detection and offset correction for fixed pattern noise (FPN) using an internal digital to analog convertor (DAC) value control function. A reliable WLVP thermal sensor was obtained with the design of lid wafer, the formation of Au80%wtSn20% eutectic solder, outgassing control and wafer to wafer bonding condition. The measurement of thermal conductance enables us to inspect the internal atmosphere condition of WLVP microbolometer sensor. The difference between the measurement value and design one is $3.6{\times}10-9$ [W/K] which indicates that thermal loss is mainly on account of floating legs. The mean time to failure (MTTF) of a WLVP thermal sensor is estimated to be about 10.2 years with a confidence level of 95 %. Reliability tests such as high temperature/low temperature, bump, vibration, etc. were also conducted. Devices were found to work properly after accelerated stress tests. A thermal camera with visible camera was developed. The thermal camera is available for non-contact temperature measurement providing an image that merged the thermal image and the visible image.

• Journal of information and communication convergence engineering
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• v.7 no.3
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• pp.281-285
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• 2009

Mobile robot has various sensors for describing the external world. The ultrasonic sensor widely applied to the most mobile robot to detect the obstacle and environment owing to low cost, its easy to use. However, ultrasonic sensor has major problems: the uncertainty information of sensor, false readings caused by specular reflection, multi path effect, low angular resolution and sensitivity to changes in temperature and humidity. This paper describes a sensor system for map building of mobile robot. It was made of low cost PSD (Position Sensitive Detector) sensor array and high speed RISC MPU. PSD sensor is cost effective and light weighting but its output signal has many noises. We propose heuristic S/W filter to effectively remove these noises. The developed map building sensor system was equipped on a mobile robot and was compared with ultrasonic sensor through field test.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.705-711
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• 2000

A thin film oxide semiconductor micro gas sensor array which shows only 60 mW of power consumption at an operating temperature of $300^{\circ}C$ has been fabricated using microfabrication and micromachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double-layer structure of $0.1\mum\; thick\; Si_3N_4 \;and\; 1 \mum$ thick phosphosilicate glass (PSG) prepared by low-pressure chemical-vapor deposition (LPCVD) and atmospheric-pressure chemical-vapor deposition (APCVD), respectively. The sensor array consists of such thin film oxide semiconductor sensing materials as 1 wt.% Pd-doped $SnO_2,\; 6 wt.% A1_2O_3-doped\; ZnO,\; WO_3$/ and ZnO. Baseline resistances of the four sensing materials were found to be stable after the aging for three days at $300^{\circ}C$. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials.

• Journal of the Korea Institute of Military Science and Technology
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• v.7 no.2 s.17
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• pp.81-87
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• 2004

Semiconductor thick film gas sensors based on tin oxide are fabricated and their gas response characteristics are examined for four simulant gases of chemical warfare agent (CWA)s. The sensing materials are prepared in three different sets. 1) The Pt or Pd $(1,\;2,\;3\;wt.\%)$ as catalyst is impregnated in the base material of $SnO_2$ by impregnation method.2) $Al_2O_3\;(0,\;4,\;12,\;20\;wt.\%),\;In_2O_3\;(1,\;2,\;3\;wt.\%),\;WO_3\;(1,\;2,\;3\;wt.\%),\;TiO_2\;(3,\;5,\;10\;wt.\%)$ or $SiO_2\;(3,\;5,\;10\;wt.\%)$ is added to $SnO_2$ by physical ball milling process. 3) ZnO $(1,\;2,\;3,\;4,\;5\;wt.\%)$ or $ZrO_2\;(1,\;3,\;5\;wt.\%)$ is added to $SnO_2$ by co-precipitation method. Surface morphology, particle size, and specific surface area of fabricated sensing films are performed by the SEM, XRD and BET respectively. Response characteristics are examined for simulant gases with temperature in the range 200 to $400^{\circ}C$, with different gas concentrations. These sensors have high sensitivities more than $50\%$ at 500ppb concentration for test gases and also have shown good repetition tests. Four sensing materials are selected with good sensitivity and stability and are fabricated as a sensor array A sensor array Identities among the four simulant gases through the principal component analysis (PCA). High sensitivity is acquired by using the semiconductor thick film gas sensors and four CWA gases are classified by using a sensor array through PCA.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.