• Electrical & Electronic Materials
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• v.7 no.6
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• pp.511-519
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• 1994

The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.337-345
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• 2000

The spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films, which possess excellent magnetic softness, is investigated in this work to seek a possibility of practical applications of these thin films as sensors. The resistivity of Tb-Fe thin films ranges from 180 to 250 Ωcm as the Tb content varies from 35 to 46 at. %. Tb-Fe thin films show negative Hall resistivity ranging from - 7.3 to - 5.0 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of -4.1 to -2.0 %. On the other hand, the resistivity of Sm-Fe thin films ranges from 150 to 166 Ωcm as the Sm content varies from 22 to 31 at. %. Sm-Fe thin films show positive Hall resistivity which varies from 7.1 to 2.8 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of 4.8 to 1.7 %. These values are significantly high compared with the values of other R-T alloys, Tb-Co alloys for example, where the highest reported value is 2.5 %. Between the two different sets of samples, Tb-Fe thin films with perpendicular anisotropy are considered to be more suitable for practical applications, since saturation is reached at a los magnetic field, approximately 2 kOe in a Tb$\sub$35.1/ Fe$\sub$64.9/ thin film, for example.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.646-650
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• 2017

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.55-55
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• 1993

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.293-297
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• 1993

Exchange coupled $NiFe/TbCo/Sio_{2}$ thin films for magnetoresistive heads were sputter deposited using RF diode sputtering method, and their magnetic characteristics were measured. TbCo films were deposited using a composite target, which is composed of Tb chips epoxied on a Co target. NiFe($400\AA$)/TbCo($1500\AA$)/$SiO_{2}$($500\AA$) films were deposited using a TbCo target having 30 % of Tb area ratio, which showed 25 Oe of the exchange field without substrate bias and 12 Oe with -55 V of substrate bias. The effective in-plane coercivities of the three layer films fabricated with less than -55 V of substrate bias were approximately proportional to the perpendicular coercivities of the TbCo layer only. The films fabricated with a Theo target of 28 % area ratio showed the same trend. However, the exchange field decreased to 4 Oe without the substrate bias and 7 Oe with -55 V of substrate bias. In the films fabricated with 1000 W of power and the target of 36 % area ratio exhibited 100 Oe of exchange field and 3 Oe of coercivity. As the thickness of NiFe layer increased, the exchange field decreased.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.767-774
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• 1994

The TbFeCo thin films were prepared by the magnetron sputtering system to investigate the effect of the base pressure, film thickness and pre sputtering on the oxidation of the films by analyzing the change of matneto optical properties and by AES depth profile. The films prepared by the facing targets sputtering system represented almost constant magneto optical properties independent of the base pressure resulting from the short flight distance of the sputtered particles. Also, the thin TbFeCo films represented better perpendicular anisotropy as the films thickness increased with pre sputtering. However, it was still needed a deposition rate higher than a certain critical deposition rate to obtain a perfect perpendicular anisotropy even at a very high film thickness.

• Proceedings of the Korean Magnestics Society Conference
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• 1993.11a
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• pp.102-103
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• 1993

• Proceedings of the Korean Magnestics Society Conference
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• 1992.03a
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• pp.98-99
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• 1992

• Journal of Magnetics
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• v.13 no.4
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• pp.160-162
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• 2008

In this work the magnetic anisotropies of magnetostriction material $Tb(Fe_{0.55}Co_{0.45})_{1.5}$ (named a-TerfecoHan) films were investigated with respect to working pressures in the range 1-7 mTorr. The results obtained show that perpendicular magnetic anisotropy (PMA) can be obtained at a working pressure above 5.1 mTorr. XRD was utilized to clarify the origin of the PMA observed in $Tb(Fe_{0.55}Co_{0.45})_{1.5}$ films, and revealed that all samples were amorphous. Therefore, we propose that the PMA effect is explained by stress produced in film due to internal relaxation process and magnetic anisotropy enhancements caused by magnetoelastic interactions.

• Transactions of the Society of Information Storage Systems
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• v.1 no.2
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• pp.127-131
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• 2005

We report a nanometer scale mark formation using a $PtO_x$ thin film or a TbFeCo rare-earth transition metal film and the mechanism. The multi-layer samples($ZnS-SiO_2/PtOx/ZNS-SiO_2,\;ZnS-SiO_2/TbFeCo/ZnS-SiO_2$) were prepared with a magnetron sputtering method on a polycarbonate or a glass substrate. By laser irradiation of approximately a few nanoseconds, nanometer scale marks were fabricated. During the fabrication process, the thin films were thermally reacted or inter-diffused during the laser irradiation. 75 nm bubble marks in the PtOx multi-layer sample by an approximately 4-ns laser irradiation. Inside the bubble mark, Pt particles with a few nanometer sizes are distributed. The $50{\sim}100$ nm bubble marks in the TbFeCo multi-layer sample by a few nanosecond laser irradiations. We will report the detail structure of the samples, the bubble mark formation process and the mechanism.