• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.6
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• pp.726-732
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• 2019

In this study, we proposed an asymmetric differential inductor to improve the linearity of differential power amplifiers. Considering the phase error between differential signals of the differential amplifier, the location of the center tap of the differential inductor was modified to minimize the error. As a result, the center tap was positioned asymmetrically inside the differential inductor. With the asymmetric differential inductor, the AM-to-AM and AM-to-PM distortions of the amplifier were suppressed. To confirm the feasibility of the inductor, we designed a 2.4 GHz differential CMOS PA for IEEE 802.11n WLAN applications with a 64-quadrature amplitude modulation (QAM), 9.6 dB peak-to-average power ratio (PAPR), and a bandwidth of 20 MHz. The designed power amplifier was fabricated using the 180-nm RF CMOS process. The measured maximum linear output power was 17 dBm, whereas EVM was 5%.

• Journal of Electrical Engineering and Technology
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• v.2 no.1
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• pp.81-88
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• 2007

This paper proposes a coupled inductor-based rectifier of a Three-Level (TL) DC/DC converter and compares the rectification methods of a TL converter. The CICDR- TL (Coupled Inductor Current Doubler Rectifier Three-Level) converter achieves ZVS (Zero Voltage Switching) for the switches in a wide load range. CDR (Current Doubler Rectifier) and CICDR Three-Level converter have low voltage and current ripple. Advantages and disadvantages of topology compared to the rectifier of bridge, center-tap, CDR, and CICDR are discussed. Experimental estimation results are obtained on a 27V, 60A DC/DC TL converter prototype for the 1.8kW, 40kHz IGBT based experimental circuit.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.21-27
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• 2015

An improved method based on direct extraction and simultaneous optimization is developed to determine model parameters of symmetric inductors fabricated by the high resistivity(HR) silicon-on-insulator(SOI) RF CMOS process. In order to improve modeling accuracy, several model parameters are directly extracted by Y and Z-parameter equations derived from two equivalent circuits of symmetric inductor and grounded center-tap one, and the number of unknown parameters is reduced using parallel resistance and total inductance equations. In order to improve optimization accuracy, two sets of measured S-parameters are simultaneously optimized while same model parameters in two equivalent circuits are set to common variables.

• Proceedings of the KIEE Conference
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• 2006.04b
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• pp.211-215
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• 2006

This paper present the Half-Bridge converter for low current output. In converter system, magnetic components are important devices used for energy storage, energy transfer, galvanic isolation and filtering. The proposed Half-Bridge converter is to reduce the number of magnetic components. The secondary rectification was discussed by comparison of center-tap type with primary center-core transformer winding and primary side-core transformer winding. A prototype featuring 400V input, 10V output, 400kHz switching frequency, and 100W output power.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.177-178
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• 2014

본 논문은 낮은 전압 스트레스와 고효율을 갖는 탭인덕터 부스트 컨버터를 제안한다. 기존의 탭인덕터 부스트 컨버터는 스위치의 기생 캐패시턴스와 누설 인덕턴스의 공진으로 인하여 반도체 소자에 높은 전압 스트레스가 발생하고 이를 저감하기 위한 손실스너버의 추가로 전력변환효율이 떨어진다. 하지만 제안회로는 손실스너버없이 스위치와 다이오드를 전압원으로 클램핑하여 낮은 전압스트레스를 가진다. 또한, 탭인덕터의 누설인덕턴스를 이용한 스위치의 영전류 스위칭 턴-온과 캐패시터를 이용한 영전압 스위칭 턴-오프로 스위칭 손실을 매우 저감시켜 높은 전력변환효율을 가진다. 제안회로의 타당성을 증명하기 위하여 이론적 해석과 실험결과 제시하였다.

• Proceedings of the KIPE Conference
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• 2019.07a
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• pp.291-292
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• 2019

본 논문에서는 AC 센서를 사용하는 전기자전거용 탭 인덕터 부스트 컨버터 시스템을 제안한다. 일반적으로 인덕터 전류 측정을 위해서는 DC 센서를 사용한다. 왜냐하면, AC 센서를 사용하여서 인덕터 평균 전류 크기를 측정하면 평균 전류 크기가 0이기 때문에 실효성이 있는 평균 전류 크기를 측정할 수 없다. 하지만 탭 인덕터 부스트 컨버터의 경우에는 부스트 컨버터 스위치가 닫혔을 때와 열렸을 때의 인덕터값이 달라져서 AC 센서로 측정되는 인덕터 전류 크기가 0이 아니고 AC 센서 측정값과 탭 인덕터의 턴 비를 이를 이용하여 간단한 계산을 통해 인덕터에 흐르는 평균 입력 전류 크기를 계산할 수 있다. 알 수 있다. 제안되는 시스템은 프로토타입 하드웨어로 설계되었으며 본문의 실험을 통해서 검증되었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.199-207
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• 2011

A Ku-band low noise amplifier has been designed and fabricated by using 0.25 um SiGe BiCMOS process. The developed Ku-band LNA RFIC which has been designed with hetero-junction bipolar transistor(HBT) in the BiCMOS process have noise figure about 2.0 dB and linear gain over 19 dB in the frequency range from 9 GHz to 14 GHz. Optimization technique for p-tap value and electro-magnetic(EM) simulation technique had been used to overcome the inaccuracy in the PDK provided from the foundry service company and to supply the insufficient inductor library. The finally fabricated low noise amplifier of two fabrication runs has been implemented with the size of $0.65\;mm{\times}0.55\;mm$. The pure amplifier circuit layout with the reduced size of $0.4\;mm{\times}0.4\;mm$ without the input and output RF pads and DC bais pads has been incorporated as low noise amplication stages in the multi-function RFIC for the active phased array antenna of Ku-band satellite VSAT.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1603-1605
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• 2001

Eight 300kJ modularized capacitor-banks have been constructed. These modules have been installed and assembled to make a 2.4MJ pulse power system (PPS). This 2.4MJ PPS was developed to be used as a driver of an electrothermal-chemical (ETC) gun. Each capacitor bank has six 22kV, 50kJ capacitors connected in parallel. A triggered vacuum switch (TVS-43) was adopted as a main pulse power-closing switch in each module. The module also contains a crowbar circuit made of three high-voltage diode-stacks, a multi-tap inductor and an energy-dumping resistor. Various current shapes have been formed by a sequential firing of multiple capacitor banks. Resistive dummy load has been used and various combinations of experimental parameters, such as charging voltage, trigger time and inductance, were tested to make flexible current shapes.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.1
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• pp.64-73
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• 2001

This paper presents a Zero Voltage and Zero Current Switching (ZVZCS) 3-Level DC/DC converter. This converter overcomes the drawbacks presented by the conventional Zero Voltage Switching(ZVS) 3-Level converter, such as high circulating energy, severe parastic ringing on the rectifier diodes, and limited ZVS load range for the inner switches. The converter presented in this paper uses a phase shift control with a flying capacitor in the primary side to achieve ZVS for the outer switches. Additionally, the converter uses an energy recovery snubber to reset the primary current during the free-wheeling stage to achieve ZCS for the inner switches. The proposed converters are analyzed and verified on 6kW, 39kHz experimental prototype.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.5B no.4
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• pp.366-373
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• 2005

This paper presents two new circuit topologies of the dc busline side active resonant snubber assisted voltage source high frequency link soft switching PWM full-bridge dc-dc power converters acceptable for either utility ac 200V-rms or ac 400V-rms input grid. These high frequency switching dc-dc converters proposed in this paper are composed of a typical voltage source-fed full-bridge PWM inverter, high frequency transformer with center tap, high frequency diode rectifier with inductor input filter and dc busline side series switches with the aid of a dc busline parallel capacitive lossless snubber. All the active switches in the full-bridge arms as well as dc busline snubber can achieve ZCS turn-on and ZVS turn-off transition commutation with the aid of a transformer leakage inductive component and consequently the total switching power losses can be effectively reduced. So that, a high switching frequency operation of IGBTs in the voltage source full bridge inverter can be actually designed more than about 20 kHz. It is confirmed that the more the switching frequency of full-bridge soft switching inverter increases, the more soft switching PWM dc-dc converter with a high frequency transformer link has remarkable advantages for its power conversion efficiency and power density implementations as compared with the conventional hard switching PWM inverter type dc-dc power converter. The effectiveness of these new dc-dc power converter topologies can be proved to be more suitable for low voltage and large current dc-dc power supply as arc welding equipment from a practical point of view.